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Nexperia USA Inc. BCM857BV,315
- Part No.:
- BCM857BV,315
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BCM857BV,315.pdf
- Description:
- TRANS 2PNP 45V 100MA SOT-666
- Quantity:
- Payment:
- Shipping:
Inventory:6,560
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Product details
Overview
BCM857BV from Nexperia is a PNP/PNP matched double transistor in SOT666 package, designed for precision analog functions requiring tight current gain (hFE1/hFE2 = 0.9–1) and base-emitter voltage matching (≤2 mV). Each transistor supports −45 V VCEO, −100 mA IC, and delivers hFE of 200–450 at −5 V VCE / −2 mA IC. It is used in high-accuracy current mirrors and differential amplifiers in instrumentation and sensor signal conditioning circuits.
For engineers reviewing the BCM857BV datasheet, BCM857BV pinout, BCM857BV application, or BCM857BV equivalent, key selection criteria include matched hFE ratio, VBE tracking under −2 mA bias, thermal resistance (416 K/W per device), SOT666 footprint compatibility, and PNP-only dual-transistor topology for complementary-symmetry-free designs.
Technical Context
This matched pair integrates two fully isolated PNP transistors on a single die-scale SOT666 substrate, enabling precise current mirroring without external trimming. Its matching specifications are characterized at −5 V VCE and −2 mA IC with Tamb = 25 °C, and performance remains stable across −55 °C to +150 °C ambient range.
The device exhibits low noise figure (3.1 dB at 1 kHz), high fT (100–175 MHz), and tight VCEsat (−200 to −400 mV at −100 mA/−5 mA), supporting high-speed, low-distortion analog front-ends where gain and offset tracking directly impact system accuracy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V per transistor: maximum safe collector-emitter voltage with open base, defining breakdown margin in high-side current mirror configurations. |
| hFE1/hFE2 | 0.9–1: ratio of smaller-to-larger DC current gain ensures ≤10% gain mismatch, critical for error cancellation in differential pairs. |
| VBE1−VBE2 | ≤2 mV: absolute difference in base-emitter voltage at −2 mA IC enables sub-0.1% offset in precision current mirrors. |
| Ptot (per device) | 300 mW at Tamb ≤ 25 °C: total dissipation limit for both transistors on FR4 PCB, constraining continuous output current in linear applications. |
| Rth(j-a) | 416 K/W per device: junction-to-ambient thermal resistance determines temperature rise under load-critical for stability in unheatsinked layouts. |
| fT | 100–175 MHz: transition frequency at −10 mA IC defines usable bandwidth for AC-coupled amplifier stages up to ~10 MHz. |
| ICBO | −15 nA at −30 V VCB / 25 °C: collector-base leakage sets minimum detectable current in high-impedance sensing nodes. |
Pinout & Package
SOT666 plastic surface-mount package: 6-lead, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body; optimized for reflow soldering on FR4 PCBs with standard footprint per Figure 12.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1: connects to low-side reference node in current mirror or differential pair emitter degeneration. |
| 2 | B1 | Base of Transistor 1: input control terminal for biasing TR1; matched to B2 for symmetrical drive in differential topologies. |
| 3 | C2 | Collector of Transistor 2: high-side output node in current mirror configuration (Fig. 9); referenced to VCC. |
| 4 | E2 | Emitter of Transistor 2: tied to common emitter node in differential amplifier (Fig. 10); provides shared current source path. |
| 5 | B2 | Base of Transistor 2: second input terminal; voltage-matched to B1 ensures identical VBE biasing across both devices. |
| 6 | C1 | Collector of Transistor 1: primary output in current mirror; sinks mirrored current proportional to TR2's collector current. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 = 0.9–1 ensures ≤10% gain error between transistors, reducing common-mode error in active loads. |
| Base-emitter voltage matching | VBE1−VBE2 ≤ 2 mV at −2 mA IC enables <0.1% current ratio error in mirror configurations without trimming. |
| Thermal coupling | Monolithic SOT666 integration minimizes ΔT between transistors, preserving matching over temperature gradients. |
| Low noise operation | 3.1 dB noise figure at 1 kHz supports high-resolution sensor signal amplification without added Johnson noise. |
| High-speed capability | 175 MHz fT allows use in >10 MHz small-signal amplifiers and fast-settling current sources. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
|
Use Scenario: Precision current replication in sensor biasing and DAC output buffering where input and output currents must track within 0.5%. IC Role / Device Role / Timing Role: Dual-PNP matched pair acts as active current sink/load with self-compensating gain and VBE drift. Use Value: Eliminates need for discrete resistor matching or laser trimming; achieves <0.1% current ratio error over −40 °C to +85 °C. |
Use Scenario: Input stage of instrumentation amplifier for bridge-based pressure or strain sensors requiring high CMRR. IC Role / Device Role / Timing Role: Matched PNP pair forms emitter-coupled differential pair with shared emitter current source. Use Value: Delivers >80 dB CMRR at DC due to <2 mV VBE mismatch and identical hFE, reducing calibration overhead. |
| Active Load | Temperature-Stable Reference |
|
Use Scenario: High-impedance active load in op-amp output stages or discrete OTA designs requiring rail-to-rail compliance. IC Role / Device Role / Timing Role: TR1 and TR2 configured as cascoded current sources to increase small-signal output resistance. Use Value: Achieves >10 MΩ dynamic impedance at 1 mA bias, improving gain and PSRR without external components. |
Use Scenario: Core element of bandgap-independent voltage reference where ΔVBE is exploited for PTAT generation. IC Role / Device Role / Timing Role: Matched pair generates precise ΔVBE (≈18 mV at 10× current ratio) for curvature-corrected references. Use Value: Enables ±0.5% initial accuracy and <50 ppm/°C drift using only internal matching-no external resistors needed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857BDW1T1G | SO-7 (SOT-363) package; hFE matching ratio 0.85–1; VBE mismatch ≤5 mV; lower power rating (250 mW). | Less compact footprint; higher thermal resistance (500 K/W); suitable for cost-sensitive, non-precision designs. | Select when board space allows larger package and ±0.5% current matching suffices. |
| MBT3906DW1T1G | Same SOT-363; no guaranteed hFE or VBE matching; hFE = 100–300 per transistor; VBE not specified for matching. | Unmatched pair requires external trimming; limited to non-critical current sources or generic switching. | Choose only for non-matching applications where dual PNP function is needed but precision is unnecessary. |
Compared with BC857BDW1T1G and MBT3906DW1T1G, the BCM857BV delivers superior matching (≤2 mV VBE, 0.9–1 hFE ratio) and lower thermal resistance (416 K/W) in a smaller SOT666 footprint-making it the only option for space-constrained, high-accuracy analog current control.
Availability
BCM857BV is available at Aetrix Electronics and suitable for precision current mirrors, differential amplifiers, active loads, and temperature-stable references requiring stable component supply across industrial temperature ranges and long-lifecycle programs.
Supply support for BCM857BV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, reliability, and miniaturization.
The BCM857BV belongs to Nexperia's matched bipolar transistor product line, engineered specifically for analog signal integrity in instrumentation, sensor interfaces, and precision power management where parameter correlation is essential.
FAQ
What is the maximum continuous collector current per transistor in the BCM857BV?
The BCM857BV supports −100 mA continuous collector current per transistor under normal operating conditions, with −200 mA peak current allowed for pulses ≤1 ms. This rating assumes operation at Tamb ≤ 25 °C on an FR4 PCB with standard footprint and reflow soldering. Derating is required above 25 °C ambient per the Rth(j-a) = 416 K/W thermal resistance value.
Can the BCM857BV be used in automotive applications?
No-the BCM857BV is not automotive-qualified. Nexperia explicitly states in its legal disclaimers that unless a data sheet expressly declares automotive qualification, the product is unsuitable for automotive use. It has not undergone AEC-Q101 stress testing or been validated for automotive temperature ranges, reliability, or failure mechanisms.
How is the hFE1/hFE2 matching ratio calculated in the BCM857BV?
The hFE1/hFE2 ratio is defined as the smaller of the two measured DC current gains divided by the larger value, yielding a normalized ratio between 0.9 and 1.0. This method ensures the specification reflects worst-case gain mismatch-e.g., if hFE1 = 250 and hFE2 = 275, the ratio is 250/275 = 0.91, satisfying the 0.9 minimum requirement.
Is the SOT666 footprint compatible with automated optical inspection (AOI) systems?
Yes-the SOT666 package features clearly defined lead geometry, consistent 0.5 mm pitch, and standardized solder paste stencil openings per Nexperia's recommended footprint (Figure 12). Its flat, exposed pad-free design and symmetric pin layout enable reliable AOI detection of solder joint quality, bridging, and placement offset in high-volume SMT lines.
BCM857BV,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Transistor Type:
- 2 PNP (Dual) Matched Pair
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 300mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
BCM857BV,315 FAQ
1.How can I place an order for BCM857BV,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM857BV,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM857BV,315 reliable?
The price and inventory of BCM857BV,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857BV,315 is usually 5 days.
3.What payment methods are accepted for BCM857BV,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857BV,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM857BV,315?
BCM857BV,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM857BV,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM857BV,315?
For technical support, including BCM857BV,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857BV,315 requirements.
6.How does Aetrix verify that BCM857BV,315 is sourced from the original manufacturer or authorized distributors?
All BCM857BV,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857BV,315 meets industry standards.
7.What is the process for return or replacement of BCM857BV,315?
All BCM857BV,315 units undergo pre-shipment inspection (PSI). If there is an issue with BCM857BV,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM857BV,315 part is unused and in its original packaging.
Return procedure for BCM857BV,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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