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Diodes Incorporated BCM857BV-7
- Part No.:
- BCM857BV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BCM857BV-7.pdf
- Description:
- TRANS 2PNP 45V 100MA SOT-563
- Quantity:
- Payment:
- Shipping:
Inventory:10,658
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Product details
Overview
BCM857BV-7 from Diodes Incorporated is a matched dual PNP small-signal transistor in SOT563 package, rated for -45V VCEO, -100mA IC, and featuring 2% hFE matching and 2mV VBE matching between transistors. It is used in precision current mirrors, differential amplifiers, and temperature-stable bias networks in automotive and industrial control circuits.
For engineers reviewing the BCM857BV-7 datasheet, BCM857BV-7 pinout, BCM857BV-7 application, or BCM857BV-7 equivalent, key selection criteria include matched hFE tolerance, VBE tracking under bias, thermal coupling in SOT563, and suitability for high-reliability analog front-ends requiring intrinsic die-level matching.
Technical Context
The BCM857BV-7 integrates two adjacent PNP transistors on a single silicon die to ensure tight parametric matching-2% hFE ratio and ≤2mV VBE difference at IC = −2mA, VCE = −5V. Its fully isolated internal structure prevents cross-talk while maintaining thermal proximity.
Designed for stable analog signal conditioning, it supports operation from −65°C to +150°C with 4kV HBM ESD rating and meets AEC-Q101 qualification requirements when specified for automotive use. The SOT563 footprint enables compact layout of matched pairs without discrete placement error.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45V: Maximum safe collector-emitter voltage before breakdown in common-emitter configuration. |
| IC | −100mA: Continuous collector current per transistor, enabling robust biasing in active-load stages. |
| hFE Matching | 2%: Ratio of smaller/larger hFE values ensures predictable current mirror accuracy over temperature. |
| VBE Matching | ≤2mV: Enables sub-0.1% offset in differential pair inputs and low-drift reference generators. |
| fT | 100–175MHz: Supports high-frequency analog feedback loops up to ~100MHz with adequate phase margin. |
| RθJA (dual) | 250°C/W: Thermal resistance under full dual-die operation defines maximum power derating on standard PCBs. |
| ESD HBM | 4000V: Robustness against human-body discharge during board assembly and handling. |
Pinout & Package
Package: SOT563 - ultra-compact 6-pin surface-mount package with 0.5mm pitch, 1.6mm × 1.6mm footprint, and 0.2mm nominal thickness. Molded green compound (UL 94V-0), matte tin-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| B1 | Base of Transistor 1 | Direct control node for first PNP; requires current-limited drive due to VEB = 5V max. |
| E1 | Emitter of Transistor 1 | Common emitter connection point; often tied to supply rail in high-side switch or current mirror top. |
| C1 | Collector of Transistor 1 | Output node for first transistor; routed to load or next stage with <200mV saturation at −10mA. |
| B2 | Base of Transistor 2 | Independent base terminal for second matched PNP; enables differential or complementary biasing. |
| E2 | Emitter of Transistor 2 | Second emitter node; may be tied to E1 for parallel operation or kept separate for differential topology. |
| C2 | Collector of Transistor 2 | Second output collector; identical saturation and gain behavior as C1 within 2% hFE tolerance. |
Key Features
| Feature | Design Value |
|---|---|
| Intrinsically matched die pair | Adjacent dies on same wafer enable <2mV VBE and 2% hFE matching without external trimming. |
| Thermally coupled structure | Shared substrate minimizes ΔT between transistors, preserving matching across −65°C to +150°C range. |
| Isolated transistor operation | Internal isolation eliminates parasitic conduction paths, allowing independent biasing of each PNP. |
| AEC-Q101 qualified option | Available with PPAP support and IATF 16949 manufacturing for automotive sensor and power management modules. |
Applications
| Current Mirror Circuit | Differential Amplifier Input Stage |
|---|---|
Use Scenario: Precision DC current replication in analog sensor interfaces and voltage references. IC Role / Device Role / Timing Role: Dual PNP pair acts as high-accuracy, thermally tracked current mirror with <0.5% error over temperature. Use Value: Eliminates need for discrete matching or laser trimming; reduces BOM count and layout sensitivity. | Use Scenario: Input stage of rail-to-rail operational amplifier in automotive engine control units. IC Role / Device Role / Timing Role: Matched PNP pair provides balanced input bias and common-mode rejection >80dB. Use Value: Maintains CMRR stability across wide ambient temperature swings without external calibration. |
| Temperature-Stable Bias Generator | High-Side Load Switch Driver |
Use Scenario: Bias network for Class AB audio output stages requiring minimal thermal drift. IC Role / Device Role / Timing Role: Dual PNP forms VBE-multiplier with matched ΔVBE scaling for accurate quiescent current setting. Use Value: Achieves <±5% IQ variation from −40°C to +125°C without compensation components. | Use Scenario: High-side current sensing and switching in 12V/24V industrial power supplies. IC Role / Device Role / Timing Role: One transistor drives gate of external P-MOSFET; second provides feedback-controlled current limit. Use Value: Enables fast overcurrent shutdown (<1µs response) using matched VBE threshold detection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCM857BS-7 | SOT-363 package (larger footprint, 0.65mm pitch); same electrical specs but lower thermal coupling. | Less suitable for ultra-low-offset current mirrors due to greater inter-transistor thermal gradient. | Select when board space allows larger package and thermal matching is secondary to cost. |
| DMN3026LSD-13 | Single N-channel MOSFET; no matching, no bipolar gain, different topology (voltage-driven vs. current-driven). | Not functionally equivalent-requires redesign for gate drive, lacks inherent VBE tracking. | Only consider for non-matching, high-speed switching roles where bipolar linearity is unnecessary. |
Compared with BCM857BS-7, the BCM857BV-7 delivers superior thermal and parametric matching in a smaller footprint; versus DMN3026LSD-13, it provides essential bipolar characteristics-linear gain, predictable VBE, and intrinsic matching-for analog precision tasks.
Availability
BCM857BV-7 is available at Aetrix Electronics and suitable for automotive sensor modules, industrial current-sense subsystems, and precision analog power management requiring stable component supply and guaranteed matching performance.
Supply support for BCM857BV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The BCM857BV series belongs to Diodes' precision bipolar transistor product line, engineered specifically for applications demanding intrinsically matched PNP pairs with guaranteed hFE and VBE tracking in miniature packages.
FAQ
What is the maximum operating temperature for BCM857BV-7?
The BCM857BV-7 is rated for junction and storage temperatures from −65°C to +150°C. Its thermal resistance (RθJA) is 250°C/W for dual-die operation on a standard 1oz copper PCB, meaning power dissipation must be limited to ≤2mW at +150°C ambient to stay within absolute max ratings.
Can BCM857BV-7 replace discrete unmatched PNP transistors in existing designs?
Yes-but only if the design relies on matched parameters. Replacing two discrete BC857Bs with BCM857BV-7 improves VBE tracking by >10× and hFE matching by 5×, reducing offset drift in current mirrors and differential pairs. Layout changes are required to accommodate SOT563's 6-pin, 0.5mm-pitch footprint.
Is BCM857BV-7 qualified for automotive applications?
The BCM857BV-7 is AEC-Q101 qualified when ordered with automotive-specific change control (PPAP-capable, manufactured in IATF 16949 facilities). Standard commercial-grade BCM857BV-7 is not automatically qualified-customers must specify automotive grade at order time and confirm qualification status via Diodes' automotive support team.
How does the SOT563 package affect thermal performance compared to SOT-363?
SOT563 has higher power density and tighter thermal coupling than SOT-363 due to smaller die spacing and shared thermal path. Its RθJA is 250°C/W (dual) versus ~300°C/W for SOT-363, enabling better matching stability under dynamic load but requiring stricter PCB copper area management to avoid local hot spots.
BCM857BV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 357mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
BCM857BV-7 FAQ
1.How can I place an order for BCM857BV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM857BV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM857BV-7 reliable?
The price and inventory of BCM857BV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857BV-7 is usually 5 days.
3.What payment methods are accepted for BCM857BV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857BV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM857BV-7?
BCM857BV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM857BV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM857BV-7?
For technical support, including BCM857BV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857BV-7 requirements.
6.How does Aetrix verify that BCM857BV-7 is sourced from the original manufacturer or authorized distributors?
All BCM857BV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857BV-7 meets industry standards.
7.What is the process for return or replacement of BCM857BV-7?
All BCM857BV-7 units undergo pre-shipment inspection (PSI). If there is an issue with BCM857BV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM857BV-7 part is unused and in its original packaging.
Return procedure for BCM857BV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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