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Nexperia USA Inc. BCM857DS,115
- Part No.:
- BCM857DS,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
BCM857DS,115.pdf
- Description:
- TRANS 2PNP 45V 100MA 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:8,134
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Product details
Overview
BCM857DS,115 from Nexperia is a PNP/PNP matched double transistor in SOT457 (TSOP6) package, featuring fully isolated transistors with hFE matching ratio ≥0.9 and VBE mismatch ≤2 mV at −5 V VCE, −2 mA IC, 25 °C - optimized for precision current mirroring and differential amplification in automotive-grade analog circuits.
For engineers reviewing the BCM857DS,115 datasheet, BCM857DS,115 pinout, BCM857DS,115 application, or BCM857DS,115 equivalent, this device delivers verified AEC-Q101 qualification, dual-transistor matching performance, thermal resistance of 328 K/W (per device), and drop-in compatibility with standard double-transistor footprints in high-reliability analog signal conditioning designs.
Technical Context
The BCM857DS,115 integrates two electrically isolated PNP transistors on a single die within a TSOP6 package, enabling precise current gain and base-emitter voltage tracking under identical thermal and bias conditions. Its matching specifications are defined per IEC 60134 limiting values and validated at −5 V VCE, −2 mA IC, 25 °C ambient.
Each transistor supports VCEO = −45 V, IC = −100 mA, and Ptot = 250 mW (per transistor); the dual-device configuration allows up to 380 mW total dissipation on FR4 PCB with standard footprint. Thermal resistance from junction-to-ambient is 328 K/W for the full device.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V - maximum collector-emitter voltage before breakdown under open-base condition; defines safe operating range in high-side current mirror configurations. |
| hFE matching | 0.9–1.0 - ratio of smaller/larger DC current gain between TR1 and TR2; ensures <10% gain mismatch critical for balanced differential pair operation. |
| VBE1−VBE2 | ≤2 mV - absolute base-emitter voltage difference at −2 mA IC; enables sub-mV offset in precision current mirrors. |
| IC max | −100 mA per transistor - continuous collector current rating; supports robust output stage drive in analog front-ends. |
| Ptot (device) | 380 mW - total power dissipation limit on FR4 PCB; determines thermal derating margin for dual-transistor operation in confined layouts. |
| fT | 100–175 MHz - transition frequency at −10 mA IC; confirms suitability for audio-frequency and low-MHz signal amplification. |
| AEC-Q101 | Qualified - certified for automotive applications per Stress Test Qualification for Discrete Semiconductors; supports under-hood and ADAS sensor interface use. |
Pinout & Package
Package: TSOP6 (SOT457), surface-mounted plastic package with 6 leads, 1.7 mm × 2.5 mm footprint, 0.95 mm height, and standard reflow/wave soldering land patterns per Nexperia Fig. 12–13.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1 - primary current sink node for first transistor in mirrored or differential pair topologies. |
| 2 | B1 | Base of Transistor 1 - control input for TR1; biasing directly affects matched VBE tracking with B2. |
| 3 | C2 | Collector of Transistor 2 - output node for second transistor; used as active load or current source in mirror configurations. |
| 4 | E2 | Emitter of Transistor 2 - second current sink node; electrically isolated from E1 but thermally coupled for matching stability. |
| 5 | B2 | Base of Transistor 2 - matched control input to B1; enables symmetrical biasing in differential amplifier inputs. |
| 6 | C1 | Collector of Transistor 1 - primary output node for TR1; commonly tied to VCC via load resistor in current mirror setups. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 ≥ 0.9 - reduces gain error in feedback loops and improves CMRR in differential stages. |
| Base-emitter voltage matching | VBE1−VBE2 ≤ 2 mV - minimizes input offset in precision current sources and active loads. |
| AEC-Q101 qualification | Stress-tested per automotive discrete semiconductor standard - enables use in engine control, body electronics, and ADAS without additional qualification effort. |
| Thermal coupling | Monolithic dual-die construction in shared package - ensures simultaneous temperature exposure for stable matching across −55 °C to +150 °C. |
| Drop-in replacement capability | TSOP6 (SOT457) footprint compatible with legacy double-transistor packages - simplifies board-level upgrades without layout revision. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
|
Use Scenario: Precision current replication in sensor biasing circuits for automotive pressure or temperature sensors. IC Role / Device Role / Timing Role: Dual PNP transistors configured as active current source/sink with matched hFE and VBE to minimize ratio error. Use Value: Achieves <0.5% current mismatch over temperature due to monolithic matching and thermal coupling - critical for ratiometric sensor excitation. |
Use Scenario: Input stage of an automotive-grade operational transconductance amplifier (OTA) for battery monitoring ICs. IC Role / Device Role / Timing Role: Matched PNP pair forming the core differential pair, with bases as inputs and collectors driving active loads. Use Value: Delivers >70 dB common-mode rejection ratio (CMRR) at DC due to ≤2 mV VBE mismatch - essential for accurate voltage sensing in noisy vehicle environments. |
| Active Load | High-Side Switch Driver |
|
Use Scenario: Constant-current active load in programmable current sources for LED driver reference circuits. IC Role / Device Role / Timing Role: TR2 configured as grounded-emitter current source, TR1 as control transistor regulating load current. Use Value: Enables <1% load current variation across supply voltage range (−45 V to −5 V) using matched VBE and hFE for stable regulation. |
Use Scenario: Level-shifting driver for high-side N-channel MOSFET gate control in 12 V automotive power distribution modules. IC Role / Device Role / Timing Role: TR1 and TR2 used in complementary emitter-follower configuration to translate logic-level signals to −12 V rail. Use Value: Supports fast turn-on/turn-off (fT ≥ 100 MHz) while maintaining matched switching thresholds - reduces shoot-through risk in half-bridge drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched PNP double transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857DS,115 | Same device - reference part with AEC-Q101 qualification and documented VBE matching ≤2 mV. | Automotive-qualified; validated for under-hood temperature cycling and humidity testing. | Select when AEC-Q101 compliance and guaranteed matching specs are mandatory. |
| MBT3906DW1T1G | PNP/PNP pair in SOT-363; hFE matching ratio ~0.85, VBE mismatch ≤5 mV; no AEC-Q101 documentation. | Suitable for industrial/commercial analog circuits but not certified for automotive use. | Consider only for cost-sensitive non-automotive designs where ±5 mV VBE tolerance is acceptable. |
Compared with BC857DS,115 and MBT3906DW1T1G, the BCM857DS,115 provides tighter VBE matching (≤2 mV vs. ≤5 mV) and formal AEC-Q101 qualification - making it the sole choice for automotive current mirrors requiring production-level reliability and traceable parametric guarantees.
Availability
BCM857DS,115 is available at Aetrix Electronics and suitable for automotive sensor interfaces, precision analog current sources, and differential amplifier front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BCM857DS,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.
The BCM857DS,115 belongs to Nexperia's AEC-Q101-qualified matched transistor product line, designed specifically for precision analog functions in automotive and industrial systems where parameter matching and thermal stability are critical.
FAQ
Is BCM857DS,115 pin-compatible with BC857DS,115?
Yes - both share identical TSOP6 (SOT457) package, pin 1 index orientation, and pin function mapping (E1-B1-C2-E2-B2-C1). The marking code 'R8' applies to both, and mechanical dimensions match per Nexperia Fig. 11. No PCB redesign is required for substitution.
What is the maximum allowable junction temperature during continuous operation?
The absolute maximum junction temperature is 150 °C per IEC 60134. For continuous operation at rated current, thermal design must ensure Tj ≤ 150 °C using the device-level Rth(j-a) of 328 K/W on FR4 PCB. Derating begins above Tamb = 25 °C per the thermal characteristics table.
Does BCM857DS,115 support pulsed current operation beyond 100 mA?
Yes - peak collector current ICM is rated at −200 mA for pulses ≤1 ms (single pulse), as specified in Table 5. This enables short-duration overload handling in protection circuits or transient current sourcing without permanent damage.
How is hFE matching measured and guaranteed in production?
hFE1/hFE2 is measured per transistor at VCE = −5 V, IC = −2 mA, Tamb = 25 °C; the ratio uses the smaller hFE as numerator. All units undergo 100% electrical test for matching compliance, with data recorded per AEC-Q101 qualification requirements.
BCM857DS,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual) Matched Pair
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 380mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
BCM857DS,115 FAQ
1.How can I place an order for BCM857DS,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM857DS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM857DS,115 reliable?
The price and inventory of BCM857DS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857DS,115 is usually 5 days.
3.What payment methods are accepted for BCM857DS,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857DS,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM857DS,115?
BCM857DS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM857DS,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM857DS,115?
For technical support, including BCM857DS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857DS,115 requirements.
6.How does Aetrix verify that BCM857DS,115 is sourced from the original manufacturer or authorized distributors?
All BCM857DS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857DS,115 meets industry standards.
7.What is the process for return or replacement of BCM857DS,115?
All BCM857DS,115 units undergo pre-shipment inspection (PSI). If there is an issue with BCM857DS,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM857DS,115 part is unused and in its original packaging.
Return procedure for BCM857DS,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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