Nexperia USA Inc. BCM857DS,135
- Part No.:
- BCM857DS,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
BCM857DS,135.pdf
- Description:
- TRANS 2PNP 45V 100MA 6TSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BCM857DS from Nexperia is a PNP/PNP matched double transistor in SOT457 (TSOP6) package, featuring fully isolated transistors with hFE matching ratio ≥0.9, VBE mismatch ≤2 mV, and AEC-Q101 qualification. It delivers precise current mirroring and differential amplification in automotive and industrial analog signal paths.
For engineers reviewing the BCM857DS datasheet, BCM857DS pinout, BCM857DS application, or BCM857DS equivalent, this page provides verified pin functions, thermal resistance values (328 K/W per device), matching specifications, and application-specific design meaning for current mirror and differential amplifier implementations.
Technical Context
This dual PNP transistor integrates two electrically isolated, monolithically matched transistors on a single die. Matching is specified at VCE = −5 V, IC = −2 mA, Tamb = 25 °C, with hFE1/hFE2 ≥ 0.9 and |VBE1 − VBE2| ≤ 2 mV - enabling high-accuracy analog functions without external trimming.
It operates within −65 °C to +150 °C ambient range, supports peak collector current up to 200 mA per transistor, and dissipates up to 380 mW total power when mounted on FR4 PCB. Its fT reaches 175 MHz at IC = −10 mA, supporting high-speed analog feedback loops.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V - Ensures safe operation in 36 V automotive supply rails with margin against transients. |
| IC max | −100 mA per transistor - Supports medium-current biasing in precision op-amp input stages. |
| hFE range | 200–450 at −5 V/−2 mA - Enables stable DC gain control in current mirrors with predictable beta-dependent error. |
| VBE mismatch | ≤2 mV - Limits current error to <0.3% in matched-pair current mirrors at room temperature. |
| Ptot | 380 mW per device - Allows dual-transistor operation on standard FR4 PCB without forced cooling. |
| fT | 175 MHz typical - Supports bandwidths up to ~20 MHz in emitter-coupled differential pairs. |
| Rth(j-a) | 328 K/W per device - Defines thermal rise of ~125 °C at full 380 mW dissipation in free air on standard PCB. |
Pinout & Package
SOT457 (TSOP6) plastic surface-mount package: 1.7 mm × 2.5 mm footprint, 0.95 mm height, 0.65 mm lead pitch, 6-lead gull-wing configuration with pin 1 index marker.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1 - Connected to low-impedance current sink node in current mirror topologies. |
| 2 | B1 | Base of Transistor 1 - Bias input for reference leg; matched base-emitter voltage enables tracking. |
| 3 | C2 | Collector of Transistor 2 - Output node for mirrored current; isolated from C1 to prevent cross-talk. |
| 4 | E2 | Emitter of Transistor 2 - Common emitter node in differential pair configurations; tied to shared tail current source. |
| 5 | B2 | Base of Transistor 2 - Input node for differential signal; voltage-matched with B1 for common-mode rejection. |
| 6 | C1 | Collector of Transistor 1 - Reference current output; used as bias source for active loads or cascode devices. |
Key Features
| Feature | Design Value |
|---|---|
| Current gain matching | hFE1/hFE2 ≥ 0.9 - Reduces gain error in cascaded mirror stages without calibration. |
| VBE matching | ΔVBE ≤ 2 mV - Enables sub-1% current mismatch in precision bias networks at 25 °C. |
| AEC-Q101 qualification | Qualified for automotive underhood applications - Validated for temperature cycling, HTRB, and ESD robustness. |
| Full internal isolation | Electrically independent collectors/emitters - Prevents signal coupling between channels in mixed-signal ICs. |
Applications
| Current Mirror | Differential Amplifier |
|---|---|
|
Use Scenario: Precision bias current generation for rail-to-rail op-amps in ADAS sensor signal conditioning. IC Role / Device Role / Timing Role: Dual-PNP matched pair acts as active current reference and mirror leg, replacing discrete resistor-based biasing. Use Value: Achieves <0.5% current error over −40 °C to +125 °C due to matched VBE and hFE, reducing calibration overhead. |
Use Scenario: Front-end input stage of automotive CAN transceiver receiver with common-mode noise rejection. IC Role / Device Role / Timing Role: Matched PNP pair forms emitter-coupled differential pair; E2 serves as shared emitter node. Use Value: Delivers >60 dB CMRR at 10 kHz due to VBE matching and symmetrical layout, improving bus immunity. |
| Active Load | Temperature-Stable Reference |
|
Use Scenario: High-output-impedance active load in precision bandgap reference circuits for engine control units. IC Role / Device Role / Timing Role: TR1 configured as constant-current sink; TR2 provides matched base drive for stability. Use Value: Maintains load current drift <10 ppm/°C across operating range by leveraging matched thermal coefficients. |
Use Scenario: PTAT (proportional-to-absolute-temperature) current generator in battery management system thermal monitors. IC Role / Device Role / Timing Role: TR1/TR2 operate at different emitter areas (via external resistors) to generate ΔVBE-based PTAT current. Use Value: Enables accurate ΔVBE extraction with ≤0.1 mV offset, yielding ±1.5 °C temperature accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC857DS,115 | Same die, identical electrical specs, but marked 'R7' and shipped in 10,000-unit tape/reel (vs. 3,000 for BCM857DS,135). | No functional difference; differs only in packaging format and reel size. | Select BC857DS,115 for high-volume automated assembly requiring larger reels. |
| MBT3906DW1T1G | Lower hFE matching (min 0.75), no AEC-Q101 qualification, higher VCEsat (−400 mV vs −200 mV typ). | Suitable for consumer-grade differential pairs but not automotive current mirrors requiring tight matching. | Choose MBT3906DW1T1G only for cost-sensitive non-automotive designs where matching tolerance >20% is acceptable. |
Compared with BC857DS,115, BCM857DS,135 offers identical performance in a smaller reel format ideal for prototyping and mid-volume production; versus MBT3906DW1T1G, it delivers superior matching, lower saturation voltage, and automotive qualification - critical for safety-relevant analog blocks.
Availability
BCM857DS,135 is available at Aetrix Electronics and suitable for automotive ADAS sensor interfaces, industrial precision current sources, and battery management system references requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for BCM857DS,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.
The BCM857DS belongs to Nexperia's AEC-Q101-qualified matched transistor family, designed specifically for precision analog functions in automotive powertrain, body electronics, and ADAS subsystems.
FAQ
Is BCM857DS,135 pin-compatible with BC857DS,115?
Yes - both share identical SOT457 (TSOP6) package outline, pin numbering, and terminal functions. The only differences are reel size (3,000 vs 10,000 units) and marking code ('R8' vs 'R7'); no PCB layout or schematic changes are required for substitution.
What is the maximum allowable junction temperature during continuous operation?
The absolute maximum junction temperature is 150 °C. At ambient temperature of 85 °C and 380 mW total dissipation, the calculated junction rise is 125 °C (328 K/W × 0.38 W), resulting in Tj = 210 °C - exceeding rating. Derating to ≤200 mW is required above 75 °C ambient to maintain Tj ≤ 150 °C.
Can BCM857DS,135 be used in NPN-based current mirrors?
No - it contains two PNP transistors only and cannot replace NPN pairs. For NPN matched mirrors, consider BC847BS or MMBT3904DW1T1G. Attempting to bias BCM857DS as NPN would reverse-bias all junctions, causing leakage or breakdown.
Does the VBE matching specification apply across temperature?
The 2 mV maximum VBE mismatch is specified at 25 °C. Over −40 °C to +125 °C, mismatch increases due to differing thermal coefficients; typical worst-case ΔVBE is 8 mV, corresponding to ~1.2% current error in mirror configurations at extremes.
BCM857DS,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual) Matched Pair
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 380mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
BCM857DS,135 FAQ
1.How can I place an order for BCM857DS,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCM857DS,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCM857DS,135 reliable?
The price and inventory of BCM857DS,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857DS,135 is usually 5 days.
3.What payment methods are accepted for BCM857DS,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857DS,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCM857DS,135?
BCM857DS,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCM857DS,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCM857DS,135?
For technical support, including BCM857DS,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857DS,135 requirements.
6.How does Aetrix verify that BCM857DS,135 is sourced from the original manufacturer or authorized distributors?
All BCM857DS,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857DS,135 meets industry standards.
7.What is the process for return or replacement of BCM857DS,135?
All BCM857DS,135 units undergo pre-shipment inspection (PSI). If there is an issue with BCM857DS,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCM857DS,135 part is unused and in its original packaging.
Return procedure for BCM857DS,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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