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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Nexperia USA Inc. BCM857QASZ

Name: BCM857QASZ
Brand: Nexperia USA Inc.
SKU: BCM857QASZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BCM857QASZ

Manufacturer:: Nexperia USA Inc.

Category:: Bipolar Transistor Arrays

Package:: 6-XFDFN Exposed Pad

Datasheet:: BCM857QASZ.pdf

Description:: TRANS 2PNP 45V 100MA DFN1010B-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BCM857QAS from Nexperia is a dual PNP matched transistor pair in a DFN1010B-6 (SOT1216) package, designed for precision analog functions requiring tight parameter matching. It delivers V_CEO = −45 V, I_C = −100 mA per transistor, h_FE matching ratio of 0.95–1.05, and V_BE matching ≤ 2 mV at −2 mA, enabling high-accuracy current mirroring and differential amplification in automotive sensor signal conditioning circuits.

For engineers reviewing the BCM857QAS datasheet, BCM857QAS pinout, BCM857QAS application, or BCM857QAS equivalent, this device is selected for its AEC-Q101 qualification, ultra-thin 0.37 mm profile, and application-optimized pinout supporting compact PCB layout in space-constrained automotive ECUs and industrial current-sense modules.

Technical Context

The BCM857QAS integrates two electrically matched PNP transistors on a single die within a thermally enhanced leadless DFN package. Its matching specifications-h_FE1/h_FE2 = 0.95–1.05 and ΔV_BE ≤ 2 mV-are measured under identical bias conditions (V_CE = −5 V, I_C = −2 mA, T_amb = 25 °C), ensuring consistent gain and base-emitter voltage across both devices.

It operates with absolute maximum ratings including V_CBO = −50 V, V_EBO = −6 V, and P_tot = 350 mW per device on FR4 PCB. Thermal resistance R_th(j-a) is 358 K/W per device, enabling stable operation up to T_j = 150 °C in automotive ambient environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−45 V - Maximum safe collector-emitter voltage with base open; defines breakdown margin in high-side current mirror configurations.
I_C	−100 mA - Continuous collector current per transistor; supports medium-current analog stages without derating at 25 °C.
h_FE matching	0.95–1.05 - Ratio of DC current gains between TR1 and TR2; enables <1% gain error in matched-pair topologies.
ΔV_BE	≤ 2 mV - Base-emitter voltage mismatch at −2 mA; ensures sub-0.3% current ratio error in precision current mirrors.
P_tot (per device)	350 mW - Total power dissipation on standard FR4 PCB; sets thermal design boundary for dual-transistor operation.
f_T	100–175 MHz - Transition frequency at −10 mA; supports high-speed differential amplification up to ~100 MHz bandwidth.
AEC-Q101	Qualified - Meets stress test requirements for discrete semiconductors in automotive applications; validated for temperature cycling, HTRB, and ESD.

Pinout & Package

Package: DFN1010B-6 (SOT1216), ultra-thin surface-mount plastic package with no leads, 0.37 mm height, and thermal enhancement via exposed die pad.

Pin/Terminal	Circuit Role	Design Meaning
1	E1	Emitter of transistor TR1 - Connected to low-side reference node in current mirror or differential pair.
2	B1	Base of transistor TR1 - Bias input for TR1; matched to B2 for symmetrical control in differential configurations.
3	C2	Collector of transistor TR2 - High-side output node; shares common collector routing with pin 8 in layout-optimized configuration.
4	E2	Emitter of transistor TR2 - Paired with E1 for balanced emitter-coupled operation.
5	B2	Base of transistor TR2 - Complementary bias input to B1; critical for V_BE matching and common-mode rejection.
6	C1	Collector of transistor TR1 - Primary output node for TR1; physically adjacent to C2 (pin 3) to minimize trace asymmetry.

Key Features

Feature	Design Value
Current gain matching	h_FE1/h_FE2 = 0.95–1.05 ensures ≤5% gain mismatch, directly reducing error in active load and mirror-based bias networks.
Base-emitter voltage matching	ΔV_BE ≤ 2 mV at −2 mA enables <0.3% current ratio accuracy in precision mirror designs without trimming.
AEC-Q101 qualification	Validated for automotive use including temperature cycling, high-temperature reverse bias, and ESD robustness per JESD22 standards.
Application-optimized pinout	Pins 3 (C2) and 6 (C1) placed adjacently to support symmetric collector routing in differential amplifier layouts.
Ultra-low profile	0.37 mm height allows integration into ultra-thin modules such as automotive camera PCBs and compact sensor housings.

Applications

Current Mirror

Differential Amplifier

Use Scenario: Precision current replication in automotive oxygen sensor interface circuitry where reference and load currents must track within 0.5% over −40 °C to +125 °C.

IC Role / Device Role / Timing Role: Dual PNP pair acts as matched active load and reference leg, replacing discrete resistors to improve temperature stability and dynamic range.

Use Value: ΔV_BE ≤ 2 mV and h_FE matching reduce current error from >3% (resistor-based) to <0.4%, enabling tighter closed-loop control of lambda feedback.

Use Scenario: Front-end amplification of low-level signals from MEMS pressure sensors in brake master cylinder modules.

IC Role / Device Role / Timing Role: Matched PNP pair forms emitter-coupled differential pair, providing common-mode rejection and rail-to-rail input swing near V_CC.

Use Value: Tight V_BE and h_FE matching improves CMRR by ≥15 dB versus unmatched transistors, suppressing supply noise in 5 V automotive systems.

Active Load

Temperature-Stable Bias Generator

Use Scenario: Constant-current source for LED driver biasing in adaptive front-lighting system (AFS) control ICs.

IC Role / Device Role / Timing Role: One transistor serves as reference branch, the other as programmable active load, sharing thermal environment for drift cancellation.

Use Value: Monolithic matching reduces thermal gradient-induced current drift to <±0.02%/°C, maintaining LED intensity stability across engine bay temperatures.

Use Scenario: Reference current generation for bandgap voltage references in automotive microcontrollers.

IC Role / Device Role / Timing Role: Dual PNP pair implements Wilson current mirror topology with inherent beta compensation and PTAT/CTAT balancing.

Use Value: Matched h_FE and V_BE enable curvature-corrected reference currents with <10 ppm/°C variation over −40 °C to +150 °C junction range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar matched PNP transistor pair applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BCM847QAS	NPN/NPN complement; same package, matching specs, and AEC-Q101 rating but opposite polarity.	Required where NPN-based current sources or differential pairs are used (e.g., low-side sensing, NPN-input op-amps).	Select when circuit topology mandates NPN devices; not interchangeable with BCM857QAS due to polarity reversal.
BC847BDW1T1G	Single-die NPN/NPN matched pair (ON Semiconductor); same SOT-363 package, but only h_FE matching specified (no ΔV_BE data published).	Lacks published V_BE matching spec; unsuitable for highest-accuracy current mirrors requiring <3 mV tolerance.	Acceptable for moderate-precision applications where V_BE drift is compensated elsewhere; not recommended for automotive sensor front-ends.

Compared with BCM847QAS (NPN complement) and BC847BDW1T1G (NPN pair with unspecified V_BE matching), the BCM857QAS uniquely provides both h_FE and ΔV_BE guarantees in a PNP configuration, making it the only qualified option for high-stability, high-side-referenced matched-pair designs in AEC-Q101 systems.

Availability

BCM857QAS is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial current-sense modules, and precision analog front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BCM857QAS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET components for automotive, industrial, and mobile markets.

The BCM857QAS belongs to Nexperia's AEC-Q101-qualified matched transistor family, engineered specifically for precision analog functions in harsh-environment automotive electronics where parameter matching and thermal stability are critical.

FAQ

Is BCM857QAS pin-compatible with BCM847QAS?

No. BCM857QAS is a PNP/PNP pair while BCM847QAS is an NPN/NPN pair; their pinouts are identical (DFN1010B-6), but polarity reversal means direct substitution would invert circuit functionality. Layout reuse is possible, but schematic changes are mandatory for correct biasing and current flow direction.

What is the thermal pad connection requirement for DFN1010B-6?

The DFN1010B-6 package has no exposed thermal pad; heat dissipation occurs through the copper terminals and solder joints. The datasheet specifies thermal resistance values assuming mounting on FR4 PCB with single-sided 1 oz copper and standard footprint-no thermal via or pad grounding is required or defined for this package variant.

Does BCM857QAS support operation at −55 °C?

Yes. The device is characterized from −55 °C to +150 °C ambient, with h_FE and V_BE matching data confirmed at 25 °C, and h_FE curves showing usable gain down to −55 °C (Fig. 4). Full AEC-Q101 qualification includes storage and operating temperature cycling across this full range.

Can BCM857QAS be used in linear regulator pass elements?

No. While rated for −100 mA continuous collector current, its V_CEO = −45 V and P_tot = 350 mW limit safe linear operation to low-dropout, low-power scenarios (<500 mW total dissipation). It lacks Safe Operating Area (SOA) characterization for sustained linear mode and is not intended as a pass transistor.

BCM857QASZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-XFDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 PNP (Dual) Matched Pair

Current - Collector (Ic) (Max):: 100mA

Voltage - Collector Emitter Breakdown (Max):: 45V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 5mA, 100mA

Current - Collector Cutoff (Max):: 15nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 2mA, 5V

Power - Max:: 350mW

Frequency - Transition:: 175MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DFN1010B-6

BCM857QASZ FAQ

1.How can I place an order for BCM857QASZ through Aetrix?

Please submit a Request for Quotation (RFQ) for BCM857QASZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCM857QASZ reliable?

The price and inventory of BCM857QASZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCM857QASZ is usually 5 days.

3.What payment methods are accepted for BCM857QASZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCM857QASZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCM857QASZ?

BCM857QASZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCM857QASZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCM857QASZ?

For technical support, including BCM857QASZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCM857QASZ requirements.

6.How does Aetrix verify that BCM857QASZ is sourced from the original manufacturer or authorized distributors?

All BCM857QASZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCM857QASZ meets industry standards.

7.What is the process for return or replacement of BCM857QASZ?

All BCM857QASZ units undergo pre-shipment inspection (PSI). If there is an issue with BCM857QASZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCM857QASZ part is unused and in its original packaging.

Return procedure for BCM857QASZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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