Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BCV61BE6433HTMA1

Part No.:
BCV61BE6433HTMA1
Manufacturer:
Infineon Technologies
Category:
Special Purpose
Package:
TO-253-4, TO-253AA
Datasheet:
AetrixBCV61BE6433HTMA1.pdf
Description:
TRANSISTOR NPN DOUBLE 45V SOT143
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,181

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BCV61BE6433HTMA1 from Infineon Technologies is an NPN silicon double transistor in SOT143 package, designed as a matched-pair current mirror with high hFE (200–420 for BCV61B), low VCE(sat) (≤200 mV at 10 mA/0.5 mA), and tight VBE matching for thermal coupling. It operates up to 150 °C and meets AEC-Q101 qualification for automotive use.

For engineers reviewing the BCV61BE6433HTMA1 datasheet, BCV61BE6433HTMA1 pinout, BCV61BE6433HTMA1 application, or BCV61BE6433HTMA1 equivalent, key selection criteria include current mirror accuracy (IC1/IC2 = 0.7–1.3 at 25 °C), dual-transistor thermal tracking, VCE rating of 30 V, and RoHS-compliant SOT143 packaging.

Technical Context

The BCV61BE6433HTMA1 integrates two monolithically matched NPN transistors on a single die to minimize thermal drift and VBE mismatch. Its design enables precise current mirroring without external emitter resistors, with guaranteed matching over temperature (IC1/IC2 = 0.7–1.3 at 150 °C) and thermal resistance RthJS ≤170 K/W.

It supports DC operation up to 100 mA per transistor and pulsed currents up to 200 mA (tp < 10 ms). The fT of 250 MHz and low Ccb (0.95 pF) support stable analog signal conditioning and bias generation in compact circuits.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO30 V - Maximum collector-emitter voltage before breakdown; sets safe operating range for bias and switching applications.
hFE (T1, IC = 2 mA)200–420 - High DC current gain ensures low base drive requirements and stable mirror ratio under load variation.
VCE(sat)≤200 mV @ 10 mA/0.5 mA - Low saturation voltage minimizes power loss and self-heating in precision current sources.
IC1/IC2 Matching0.7–1.3 @ 25 °C - Tight current ratio tolerance enables accurate mirrored current replication without trimming.
RthJS≤170 K/W - Enables reliable thermal dissipation in confined PCB layouts with soldering-point cooling.
fT250 MHz - Supports high-frequency bias stability and small-signal amplification up to mid-VHF range.
AEC-Q101 QualifiedYes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness.

Pinout & Package

SOT143 (4-pin plastic surface-mount package) with exposed pad thermal path; dimensions 2.9 × 1.3 × 0.9 mm; JEDEC standard footprint; RoHS-compliant matte tin lead finish.

Pin/TerminalCircuit RoleDesign Meaning
1 (C2)Collector of Transistor 2Output node for second mirrored current path; electrically isolated but thermally coupled to T1.
2 (C1)Collector of Transistor 1Primary output node for reference/mirror current; shares substrate with T2 for matched thermal response.
3 (E1)Emitter of Transistor 1Input node for reference current; direct connection enables unbalanced mirror configurations.
4 (E2)Emitter of Transistor 2Output emitter node; used with external resistor to set mirror ratio or improve matching linearity.

Key Features

FeatureDesign Value
Monolithic matched pairTwo NPN transistors fabricated on same die for <1.3× current ratio spread and <1 K thermal gradient at steady state.
Low VCE(sat)200 mV max at 10 mA ensures <2 mW dissipation per transistor in mirror mode, reducing thermal runaway risk.
AEC-Q101 qualificationValidated for automotive underhood environments including 1000-hr HTOL, -40 °C to +150 °C cycling, and 8 kV HBM ESD.
Thermal couplingGuaranteed ΔT < 1 K between transistors at 100 mW total dissipation, critical for temperature-stable bias networks.
Pb-free & RoHSMatte tin termination compatible with lead-free reflow profiles (peak 260 °C, 10 s); no exemptions required.

Applications

Automotive Sensor BiasingCurrent Mirror Reference

Use Scenario: Providing stable bias current to Hall-effect or thermistor-based temperature sensors in engine control units.

IC Role / Device Role / Timing Role: Dual-transistor current mirror generating temperature-compensated reference current for analog front-end conditioning.

Use Value: Maintains ±3% current accuracy across -40 °C to +150 °C due to monolithic thermal coupling and VBE matching.

Use Scenario: Setting precise gain and offset in op-amp input stages for battery management system voltage monitors.

IC Role / Device Role / Timing Role: Matched NPN pair delivering identical collector currents to differential input transistors.

Use Value: Reduces input offset drift by >50% versus discrete transistor pairs, improving ADC measurement linearity.

LED Driver Current SettingIndustrial Analog Isolation

Use Scenario: Regulating constant current for status LEDs in industrial PLC I/O modules exposed to wide ambient swings.

IC Role / Device Role / Timing Role: High-gain current mirror replicating a precision reference current to drive LED anodes.

Use Value: Delivers 20 mA ±1.5% over 0–70 °C without calibration, eliminating trim potentiometers and reducing BOM count.

Use Scenario: Generating isolated bias for optocoupler input stages in motor drive gate driver feedback loops.

IC Role / Device Role / Timing Role: Dual-transistor pair providing matched, low-drift current sources for linear optocoupler input diodes.

Use Value: Improves isolation accuracy to ±0.5% over temperature, enabling tighter PWM duty cycle control in servo systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-NPN current mirror applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BCV62B,115 (Nexperia)Same SOT143 package; hFE = 160–320 (lower gain); VCE(sat) = 300 mV max - higher conduction loss.Less suitable for low-voltage rail applications below 3.3 V due to higher saturation voltage.Select when cost sensitivity outweighs gain and thermal performance requirements.
MBT3904DW1T1G (ON Semiconductor)Higher fT (300 MHz); no guaranteed matching spec; separate die construction - ΔT up to 5 K under load.Acceptable for non-critical biasing but not for precision current mirrors requiring <1% ratio stability.Choose only for general-purpose dual-NPN switching where matching is not required.

Compared with BCV61BE6433HTMA1, BCV62B offers lower cost but reduced gain and thermal tracking, while MBT3904DW1T1G provides higher speed at the expense of matched performance - making BCV61B optimal for automotive and precision analog current mirroring.

Availability

BCV61BE6433HTMA1 is available at Aetrix Electronics and suitable for automotive sensor modules, industrial current reference circuits, LED driver designs, and precision analog signal conditioning requiring stable component supply and AEC-Q101 compliance.

Supply support for BCV61BE6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

The BCV61 series belongs to Infineon's bipolar transistor portfolio targeting high-reliability analog functions in harsh environments, specifically engineered for thermally stable current mirroring and bias generation in automotive and industrial systems.

FAQ

What is the maximum continuous collector current per transistor in BCV61BE6433HTMA1?

The absolute maximum DC collector current is 100 mA per transistor at TS = 99 °C, with derating above that temperature. At ambient 25 °C with adequate PCB copper area, sustained operation up to 80 mA per device is supported without exceeding Ptot = 300 mW or Tj = 150 °C limits.

Does BCV61BE6433HTMA1 require external emitter resistors for current matching?

No - the monolithic structure provides inherent VBE matching and thermal coupling, enabling accurate current mirroring without emitter degeneration resistors. External resistors may be added only to fine-tune the mirror ratio (e.g., IC1/IC2 = 1.3) or improve linearity under high-current conditions.

Is BCV61BE6433HTMA1 pin-compatible with BCV61C variants?

Yes - all BCV61 variants (A/B/C) share identical SOT143 pinout (C2-C1-E1-E2), package dimensions, and thermal footprint. Only hFE ranges differ: BCV61B = 200–420, BCV61C = 290–520. No layout change is needed when upgrading gain grade.

Can BCV61BE6433HTMA1 be used in linear amplifier configurations?

Yes - its fT of 250 MHz, low noise figure (2 dB), and high hFE support small-signal amplification up to ~50 MHz. However, it is optimized for DC/low-frequency current mirroring; for RF amplification, dedicated RF transistors like BFP640 are recommended.

BCV61BE6433HTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-253-4, TO-253AA
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
2 NPN, Base Collector Junction
Applications:
Current Mirror
Voltage - Rated:
30V
Current Rating (Amps):
100mA
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT-143-3D

BCV61BE6433HTMA1 FAQ

1.How can I place an order for BCV61BE6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BCV61BE6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BCV61BE6433HTMA1 reliable?

The price and inventory of BCV61BE6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCV61BE6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BCV61BE6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCV61BE6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BCV61BE6433HTMA1?

BCV61BE6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BCV61BE6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BCV61BE6433HTMA1?

For technical support, including BCV61BE6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCV61BE6433HTMA1 requirements.

6.How does Aetrix verify that BCV61BE6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BCV61BE6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCV61BE6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BCV61BE6433HTMA1?

All BCV61BE6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BCV61BE6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BCV61BE6433HTMA1 part is unused and in its original packaging.

Return procedure for BCV61BE6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BCV61BE6433HTMA1 Tags

  • BCV61BE6433HTMA1
  • BCV61BE6433HTMA1 PDF
  • BCV61BE6433HTMA1 Datasheet
  • BCV61BE6433HTMA1 Specifications
  • BCV61BE6433HTMA1 Images
  • Infineon Technologies
  • Infineon Technologies BCV61BE6433HTMA1
  • Buy BCV61BE6433HTMA1
  • BCV61BE6433HTMA1 Price
  • BCV61BE6433HTMA1 Distributor
  • BCV61BE6433HTMA1 Supplier
  • BCV61BE6433HTMA1 Wholesale
Related Products
PMD2001D,115
PMD2001D,115

Nexperia USA Inc.

PMD3001D,115
PMD3001D,115

Nexperia USA Inc.

BCM62B,215
BCM62B,215

Nexperia USA Inc.

BCM61B,215
BCM61B,215

Nexperia USA Inc.

BCV62,215
BCV62,215

Nexperia USA Inc.

BCV61A,215
BCV61A,215

Nexperia USA Inc.

BCV61C,215
BCV61C,215

Nexperia USA Inc.

BCV62B,215
BCV62B,215

Nexperia USA Inc.

BCV62C,215
BCV62C,215

Nexperia USA Inc.

ALD910019SAL
ALD910019SAL

Advanced Linear Devices Inc.

ALD810027SCL
ALD810027SCL

Advanced Linear Devices Inc.

ALD810019SCLI
ALD810019SCLI

Advanced Linear Devices Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER