Nexperia USA Inc. BCV61C,215
- Part No.:
- BCV61C,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Special Purpose
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BCV61C,215.pdf
- Description:
- TRANS NPN 30V 100MA DUAL SOT143B
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BCV61C,215 from Nexperia is an NPN general-purpose double transistor in SOT143B package, configured as a matched pair of monolithic NPN transistors for precision current mirroring and temperature-stable biasing. It delivers hFE = 420–800 at IC = 2 mA, VCE = 5 V; VCEsat ≤ 250 mV at IC = 10 mA/IB = 0.5 mA; and current matching ratio IC1/IE2 = 0.7–1.3 over −55 °C to +150 °C - used in analog front-ends of industrial sensor signal conditioners.
For engineers reviewing the BCV61C,215 datasheet, BCV61C,215 pinout, BCV61C,215 application, or BCV61C,215 equivalent, this device is selected for dual-transistor functions requiring matched gain, low saturation voltage, thermal tracking, and compact SMT integration in bias networks and current-source circuits.
Technical Context
The BCV61C,215 integrates two electrically isolated NPN transistors on a single die within a 4-pin SOT143B package, enabling precise current mirroring without external component matching. Its matched hFE (420–800) and tight IC1/IE2 ratio (0.7–1.3) ensure stable operating points across temperature extremes.
Each transistor supports VCEO = 30 V, IC = 100 mA, and Ptot = 250 mW at Tamb ≤ 25 °C. The structure eliminates inter-device thermal gradients, critical for applications where working point independence from ambient drift is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - maximum collector-emitter voltage per transistor before breakdown; sets safe operating range in low-voltage bias and mirror circuits. |
| hFE (TR1 & TR2) | 420–800 at VCE = 5 V, IC = 2 mA - high and tightly binned DC current gain enables accurate current replication with minimal base drive error. |
| VCEsat | ≤ 250 mV at IC = 10 mA / IB = 0.5 mA - low saturation voltage minimizes power loss and headroom consumption in active-load and current-source topologies. |
| IC1/IE2 Matching | 0.7–1.3 at Tamb ≤ 25 °C - quantifies current transfer fidelity between transistors; essential for stable mirror accuracy across process and temperature. |
| Ptot | 250 mW at Tamb ≤ 25 °C - total power dissipation limit defines thermal derating envelope for continuous operation on FR4 PCBs. |
| fT | 100 MHz at VCE = 5 V, IC = 10 mA - transition frequency confirms suitability for audio-frequency and low-MHz analog signal paths. |
Pinout & Package
SOT143B is a 4-lead surface-mount plastic package (3.0 × 1.25 × 0.95 mm), optimized for thermal performance and board-space efficiency in high-density analog layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Collector of TR2; Base connection shared by TR1 and TR2 | Shared base node enables synchronous biasing; collector of TR2 allows cascode or feedback configurations. |
| 2 | Collector of TR1 | Primary output node for TR1; used as input or reference leg in current mirror arrangements. |
| 3 | Emitter of TR1 | Reference emitter terminal; often tied to ground or current-sense resistor in mirror or amplifier bias networks. |
| 4 | Emitter of TR2 | Output emitter node; carries mirrored current; polarity and routing support sink-type current sources. |
Key Features
| Feature | Design Value |
|---|---|
| Matched NPN pair | Monolithic integration ensures identical process, geometry, and thermal coupling - critical for <1% current mismatch over temperature. |
| High hFE bin (C grade) | 420–800 gain range reduces base current error in precision mirrors and lowers sensitivity to base resistance variations. |
| Low VCEsat | 250 mV max at 10 mA enables >95% efficiency in low-headroom current sources and improves dynamic range in bias networks. |
| Extended temperature range | Operates from −65 °C to +150 °C junction temperature - validated for industrial and automotive under-hood sensor interfaces. |
Applications
| Current Mirror Circuits | Temperature-Stable Bias Networks |
|---|---|
|
Use Scenario: Precision current replication in analog front-ends of pressure and temperature sensors. IC Role / Device Role / Timing Role: Dual-transistor current mirror providing ratiometric output scaling independent of supply variation. Use Value: Matched hFE and thermal tracking maintain <±2% current error from −40 °C to +125 °C without trimming. |
Use Scenario: Biasing differential pairs in instrumentation amplifiers for factory automation PLC modules. IC Role / Device Role / Timing Role: Paired NPNs establishing stable quiescent current in active load stages. Use Value: Shared-base topology and monolithic matching eliminate thermal runaway and reduce drift to <50 ppm/°C. |
| Active Load Configurations | Low-Voltage Current Sources |
|
Use Scenario: High-output-impedance active loads in rail-to-rail op-amp output stages. IC Role / Device Role / Timing Role: TR1 as common-emitter active load; TR2 as control transistor for dynamic impedance tuning. Use Value: VCEO = 30 V and fT = 100 MHz support bandwidth >1 MHz while maintaining >10 MΩ small-signal impedance. |
Use Scenario: Programmable current sinks in LED driver IC bias references and DAC output buffers. IC Role / Device Role / Timing Role: TR2 emitter as regulated current output node; TR1 controls base voltage via feedback. Use Value: VCEsat ≤ 250 mV enables full-scale operation down to 0.5 V supply headroom in 1.8 V systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BCV61B,215 | hFE = 200–450 (lower gain bin); same pinout, matching, and ratings | Acceptable where lower gain tolerance suffices; higher base current demand increases drive complexity | Select when cost optimization outweighs need for highest mirror accuracy and lowest base-current sensitivity. |
| MBT3904DW1T1G | Two discrete 3904s in SOT-363; no monolithic matching; hFE = 100–300 per device; VCEO = 40 V | Loose thermal coupling and unmatched parameters limit use to non-critical biasing only | Choose only for non-mirroring roles where independent transistor control and higher voltage rating are prioritized over matching. |
Compared with BCV61B,215 and MBT3904DW1T1G, the BCV61C,215 provides superior current matching and higher hFE, directly enabling tighter mirror accuracy, lower base-drive overhead, and reduced thermal drift - making it optimal for precision analog current-mode circuits.
Availability
BCV61C,215 is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, programmable current sources, and temperature-stable bias networks requiring stable component supply and long-term manufacturability.
Supply support for BCV61C,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, serving automotive, industrial, and consumer markets with scalable manufacturing and rigorous quality standards.
The BCV61 series belongs to Nexperia's general-purpose bipolar transistor portfolio, engineered specifically for matched-pair analog functions including current mirroring, bias stabilization, and active load implementation in space-constrained SMT designs.
FAQ
What is the maximum allowable junction temperature for BCV61C,215?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of hFE and increased leakage. Derating is required above Tamb = 25 °C using Rth(j-a) = 500 K/W on FR4 PCB.
Can BCV61C,215 be used in a Widlar current source configuration?
Yes - its matched pair architecture, low VCEsat, and high hFE support Widlar implementations. Pin 4 (TR2 emitter) serves as the output node, while emitter degeneration resistors can be added externally to set precise current ratios per standard Widlar equations.
Is the base connection truly shared between both transistors?
Yes - Pin 1 is the common base terminal for both TR1 and TR2, confirmed in Table 2 "Pinning" and the graphic symbol. This shared base enables synchronized turn-on and inherent thermal tracking, distinguishing it from dual-transistor packages with independent bases.
How does BCV61C,215 differ from BCV62C?
BCV62C is the PNP complement of BCV61C, sharing identical SOT143B packaging and matching specifications but with opposite polarity. It is not interchangeable - BCV62C provides matched PNP current mirroring, used in complementary bias networks or level-shifting stages where sink capability is required.
BCV61C,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual) Current Mirror
- Applications:
- Current Mirror
- Voltage - Rated:
- 30V
- Current Rating (Amps):
- 100mA
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-143B
BCV61C,215 FAQ
1.How can I place an order for BCV61C,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BCV61C,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BCV61C,215 reliable?
The price and inventory of BCV61C,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BCV61C,215 is usually 5 days.
3.What payment methods are accepted for BCV61C,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BCV61C,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BCV61C,215?
BCV61C,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BCV61C,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BCV61C,215?
For technical support, including BCV61C,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BCV61C,215 requirements.
6.How does Aetrix verify that BCV61C,215 is sourced from the original manufacturer or authorized distributors?
All BCV61C,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BCV61C,215 meets industry standards.
7.What is the process for return or replacement of BCV61C,215?
All BCV61C,215 units undergo pre-shipment inspection (PSI). If there is an issue with BCV61C,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BCV61C,215 part is unused and in its original packaging.
Return procedure for BCV61C,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BCV61C,215 Tags

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PMD2001D,115
Nexperia USA Inc.

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BCM62B,215
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Nexperia USA Inc.

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Nexperia USA Inc.

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