Infineon Technologies BGX50AE6327HTSA1
- Part No.:
- BGX50AE6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Bridge Rectifiers
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BGX50AE6327HTSA1.pdf
- Description:
- BRIDGE RECT 1P 70V 140MA SOT143
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BGX50AE6327HTSA1 from Infineon Technologies is a silicon bridge-configured switching diode array in SOT143 package, rated for 50 V reverse voltage, 140 mA forward current, and 6 ns reverse recovery time-designed for high-speed signal routing and ESD protection in automotive infotainment RF front-ends.
For engineers reviewing the BGX50AE6327HTSA1 datasheet, BGX50AE6327HTSA1 pinout, BGX50AE6327HTSA1 application, or BGX50AE6327HTSA1 equivalent, key selection criteria include its AEC-Q101 qualification, 1.5 pF diode capacitance at 1 MHz, 1.3 V max forward voltage at 100 mA, and thermal resistance of 360 K/W junction-to-soldering-point.
Technical Context
This diode array integrates four diodes in a bridge topology to enable bidirectional signal clamping and RF path switching without polarity dependence. Its low 1.5 pF capacitance and 6 ns trr support operation up to UHF bands (≤1 GHz), while the 50 V VR rating targets 24 V automotive supply rail interfaces.
The device operates across −65 °C to +150 °C storage and junction temperature ranges, with thermal design anchored by RthJS = 360 K/W and derating to zero current at TS = 120 °C-enabling use in under-hood modules where solder-joint thermal management is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 50 V - supports 24 V automotive systems with 2× safety margin against transients |
| Peak Reverse Voltage (VRM) | 70 V - withstands ISO 7637-2 Pulse 1/2a load-dump spikes |
| Forward Current (IF) | 140 mA - sufficient for biasing RF switches and antenna tuning circuits |
| Reverse Recovery Time (trr) | 6 ns - enables clean switching in 100–500 MHz RF signal paths |
| Diode Capacitance (CT) | 1.5 pF @ 1 MHz, 0 V - minimizes insertion loss in 50 Ω RF traces |
| Junction Temperature (Tj) | 150 °C - qualified for under-hood engine control unit (ECU) placement |
| Thermal Resistance (RthJS) | 360 K/W - defines minimum copper pour area needed on PCB for thermal compliance |
Pinout & Package
SOT143 package: 4-pin plastic surface-mount package with gull-wing leads, 1.3 mm × 2.4 mm body, 0.95 mm height, and pin pitch of 0.9 mm. Pin 1 marked by notch or bevel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode D1 / Cathode of Diode D2 | Common anode node for one half of bridge; connects to RF input in transmit/receive switch |
| Pin 2 | Cathode of Diode D1 / Anode of Diode D3 | Bridge midpoint; used as bidirectional signal port in antenna diversity switching |
| Pin 3 | Anode of Diode D4 / Cathode of Diode D3 | Common cathode node for second half; ties to ground reference in ESD clamp configuration |
| Pin 4 | Cathode of Diode D4 / Anode of Diode D2 | Second bridge midpoint; routes to antenna or PA output in T/R switch applications |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTRB, HTGB, and temperature cycling |
| Bridge diode configuration | Enables symmetrical clamping and polarity-insensitive RF path switching without external bias networks |
| Pb-free RoHS-compliant package | SOT143 meets EU Directive 2011/65/EU and JEDEC J-STD-020 reflow profile G |
| Low 1.5 pF junction capacitance | Reduces capacitive loading on 50 Ω transmission lines, preserving VSWR < 1.5 up to 900 MHz |
| 6 ns reverse recovery time | Supports fast edge transitions in TDMA-based RF burst signals without tail distortion |
Applications
| Automotive Antenna Diversity Switch | RF Front-End ESD Protection |
|---|---|
Use Scenario: Dual-antenna GPS/GNSS receiver in vehicle telematics module requiring seamless handover between roof and windshield antennas. IC Role / Device Role / Timing Role: Bidirectional bridge diode array acts as passive RF path selector, controlled by DC bias to steer signal between antennas. Use Value: 6 ns trr ensures minimal group delay variation during switching; 1.5 pF CT maintains phase coherence across L1/L2 bands (1.2–1.6 GHz). | Use Scenario: Cellular LTE modem interface exposed to IEC 61000-4-2 contact discharge in infotainment head unit. IC Role / Device Role / Timing Role: Low-capacitance bridge diode clamps transient voltages to ±5 V while passing 700 MHz–2.7 GHz cellular signals. Use Value: 50 V VR and 70 V VRM absorb ±8 kV ESD pulses without latch-up; 140 mA IF handles induced surge currents. |
| 24 V CAN Transceiver Interface Clamp | Engine Control Unit Signal Conditioning |
Use Scenario: Protection network for high-speed CAN FD transceiver (5 Mbps) connected to chassis harness. IC Role / Device Role / Timing Role: Bridge diode array placed across CANH/CANL lines to shunt EFT bursts and ISO 7637-2 pulses. Use Value: Symmetrical breakdown behavior limits differential mode transients to < 12 V; 360 K/W RthJS allows direct mounting near transceiver die. | Use Scenario: Sensor signal line (e.g., crankshaft position) routed through engine bay with exposure to ignition noise. IC Role / Device Role / Timing Role: Diode bridge used as bidirectional TVS clamp on analog sensor input before op-amp buffer stage. Use Value: 150 °C Tj rating permits placement within 25 mm of exhaust manifold; 100 µA IR at 150 °C avoids DC offset drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bridge diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C,115 (Nexperia) | Single dual-diode common-cathode, not bridge; 30 V VR, 200 mA IF, 5 ns trr | Lacks bidirectional symmetry; requires external bias for full bridge function | Select only when discrete layout and bias control are available |
| ESD5Z3.3T5G (ON Semiconductor) | Unidirectional single-line ESD protector; 3.3 V working voltage, 12 A peak pulse current | No RF switching capability; optimized for I/O line protection, not signal routing | Use only for pure ESD suppression-not for active RF path control |
Compared with BAT54C and ESD5Z3.3T5G, BGX50AE6327HTSA1 uniquely delivers integrated bridge topology, AEC-Q101 qualification, and RF-optimized 1.5 pF/6 ns performance-making it the sole choice for automotive-grade bidirectional RF switching where space, symmetry, and transient immunity are co-constrained.
Availability
BGX50AE6327HTSA1 is available at Aetrix Electronics and suitable for automotive infotainment systems, engine control units, and telematics modules requiring stable component supply with AEC-Q101 compliance and traceable lot history.
Supply support for BGX50AE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and R&D centers.
BGX50AE6327HTSA1 belongs to Infineon's automotive-qualified discrete diode portfolio, engineered specifically for RF signal integrity and transient robustness in harsh-temperature vehicle subsystems.
FAQ
Is BGX50AE6327HTSA1 pin-compatible with standard SOT143 diode arrays like BAS16?
No. While both use SOT143, BGX50AE6327HTSA1 implements a unique bridge configuration (four diodes interconnected as two back-to-back pairs), whereas BAS16 is a dual-series diode. Pin functions differ: Pin 2 and Pin 4 serve as symmetric RF ports, not independent anodes/cathodes. Layout redesign is required.
Can BGX50AE6327HTSA1 be used in 5G sub-6 GHz front-ends?
Yes, but with design constraints. Its 1.5 pF capacitance and 6 ns trr support operation up to ~900 MHz with minimal loss; above 1 GHz, insertion loss increases due to parasitic inductance of SOT143 leads. For 3.5 GHz 5G, a flip-chip or WLCSP diode array is recommended.
What is the maximum continuous DC bias voltage that can be applied across Pins 1 and 4?
Pins 1 and 4 form one diagonal of the bridge. The absolute maximum DC voltage between them is limited by VR = 50 V. Exceeding this risks avalanche breakdown. Derating to 35 V is advised for 15-year automotive life at 125 °C junction temperature.
Does BGX50AE6327HTSA1 require external bias resistors for RF switching operation?
No external bias resistors are required for basic clamping. For active RF path switching, a 10–100 kΩ pull-up/pull-down network is used on Pin 2 or Pin 4 to set DC bias state-enabling forward conduction in one diode pair while reverse-biasing the other, per application note AN2007-03-27.
BGX50AE6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Diode Type:
- Single Phase
- Technology:
- Standard
- Voltage - Peak Reverse (Max):
- 70 V
- Current - Average Rectified (Io):
- 140 mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.3 V @ 100 mA
- Current - Reverse Leakage @ Vr:
- 200 nA @ 500 V
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT-143-3D
BGX50AE6327HTSA1 FAQ
1.How can I place an order for BGX50AE6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BGX50AE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BGX50AE6327HTSA1 reliable?
The price and inventory of BGX50AE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BGX50AE6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BGX50AE6327HTSA1?
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4.How is shipping managed for BGX50AE6327HTSA1?
BGX50AE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BGX50AE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BGX50AE6327HTSA1?
For technical support, including BGX50AE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BGX50AE6327HTSA1 requirements.
6.How does Aetrix verify that BGX50AE6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BGX50AE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BGX50AE6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BGX50AE6327HTSA1?
All BGX50AE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BGX50AE6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BGX50AE6327HTSA1 part is unused and in its original packaging.
Return procedure for BGX50AE6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BGX50AE6327HTSA1 Tags

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HDS10M-13
Diodes Incorporated

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CD-MBL106S
Bourns Inc.

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MB10S-13
Diodes Incorporated

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CD-MBL206SL
Bourns Inc.

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MB4S-TP
Micro Commercial Co

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MB6S-TP
Micro Commercial Co

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CD-MBL210S
Bourns Inc.

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BAS3007ARPPE6327HTSA1
Infineon Technologies

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DF02M
Diodes Incorporated

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CD-MBL210SL
Bourns Inc.

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DF04M
Diodes Incorporated

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DF01M
Diodes Incorporated
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