Infineon Technologies BS7067N06LS3G

Overview

BSZ067N06LS3G from Infineon Technologies is an N-channel logic-level power MOSFET optimized for high-frequency DC/DC converters and synchronous rectification. It delivers 60 V V_DS, 6.7 mΩ R_DS(on) at V_GS = 10 V, 20 A continuous drain current at T_C = 25 °C, and is housed in a PG-TSDSON-8 package with 100% avalanche testing and RoHS compliance.

For engineers reviewing the BSZ067N06LS3G datasheet, BSZ067N06LS3G pinout, BSZ067N06LS3G application, or BSZ067N06LS3G equivalent, key selection criteria include gate charge (Q_g = 47–62 nC), output capacitance (C_oss = 660–880 pF), thermal resistance (R_thJC = 1.6 K/W), and logic-level drive capability (V_GS(th) = 1.2–2.2 V).

Technical Context

This OptiMOS™3 device uses trench-based silicon technology to minimize conduction and switching losses simultaneously. Its low gate charge × R_DS(on) figure-of-merit (FOM) enables efficient operation in 300 kHz–1 MHz DC/DC topologies, especially where fast turn-on/turn-off (t_d(on) = 15 ns, t_f = 7 ns) and low reverse recovery charge (Q_rr = 39 nC) are critical.

The integrated body diode supports synchronous rectification with V_SD = 0.8–1.2 V at I_F = 20 A and t_rr = 40 ns, while the 1.6 K/W junction-to-case thermal resistance ensures effective heat transfer to PCB copper pads under high-current pulsed loads.

Key Specifications

Pinout & Package

PG-TSDSON-8 is a thermally enhanced 3.3 mm × 3.3 mm surface-mount package with exposed drain pad (pins 1–3 and 5–8 source/drain terminals; pin 4 gate). The layout supports high-current routing and low-inductance gate loops.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLML6344TRPBF and DMN3025LFG-7, BSZ067N06LS3G offers the optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness for 20 A synchronous rectifiers - making it preferred for high-efficiency, high-reliability DC/DC converters above 300 kHz.

Availability

BSZ067N06LS3G is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, USB-C PD adapters, and motor drive half-bridges requiring stable component supply and long-term lifecycle assurance.

Supply support for BSZ067N06LS3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and consumer power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The BSZ067N06LS3G supports 20 A continuous drain current at T_C = 100 °C when V_GS ≥ 10 V, as confirmed by the "Continuous drain current" table in the datasheet. This rating assumes adequate PCB copper area (6 cm²) and vertical mounting in still air per JEDEC JESD51-2 standards.

Is this MOSFET suitable for 3.3 V gate drive without external level shifting?

Yes. With a gate threshold voltage range of 1.2–2.2 V and guaranteed enhancement at V_GS = 4.5 V, the BSZ067N06LS3G fully turns on using standard 3.3 V logic outputs. R_DS(on) rises to 12.1 mΩ at V_GS = 4.5 V, which remains acceptable for many medium-current applications.

Does the device include an integrated Schottky diode or require external freewheeling?

No. It features a standard silicon body diode - not a Schottky - with V_SD = 0.8–1.2 V and t_rr = 40 ns. While usable for synchronous rectification, its Q_rr and V_SD are higher than dedicated Schottky diodes; no external diode is required unless ultra-low forward drop is mandated.

What is the recommended PCB layout for thermal performance?

Mount the device on a 40 mm × 40 mm FR4 PCB with ≥70 µm thick copper on one layer (6 cm² total area) connected directly to the exposed drain pad. Thermal vias under the pad are strongly advised. Per datasheet Figure 2, this configuration achieves R_thJA ≈ 60 K/W in vertical still-air orientation.