Infineon Technologies BSA223SP

Overview

BSA223SP from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for low-voltage logic-level switching, featuring R_DS(on) = 0.7 Ω at V_GS = −4.5 V, −20 V V_DS rating, and 150 °C operation. It serves as a compact load switch in space-constrained DC-DC converter output stages and portable power management circuits.

For engineers reviewing the BSA223SP datasheet, BSA223SP pinout, BSA223SP application, or BSA223SP equivalent, key selection criteria include its Super Logic Level gate drive (2.5 V rated), avalanche energy rating (E_AS = 1.4 mJ), dv/dt ruggedness (−6 kV/µs), and PG-SC-75 package thermal resistance (R_thJA = 500 K/W).

Technical Context

This device implements a trench-based OptiMOS™ P-channel structure enabling low on-resistance with minimal gate charge (Q_g = 0.5–0.62 nC) and fast switching (t_r = 5–7.5 ns, t_f = 3.2–4.8 ns). Its −1.2 V typical gate threshold voltage (V_GS(th)) ensures reliable turn-on at 2.5 V logic levels while maintaining low leakage (I_DSS ≤ −100 µA at 150 °C).

The integrated body diode supports synchronous rectification and reverse current handling, with V_SD = −1.0 to −1.33 V at I_F = −0.39 A and t_rr = 7.6–9.5 ns. Avalanche-rated design allows safe operation under inductive load switching without external snubbers.

Key Specifications

Pinout & Package

BSA223SP uses the PG-SC-75 (SOT-323) surface-mount package: ultra-compact 1.7 × 1.25 × 0.95 mm footprint with gull-wing leads, optimized for automated assembly and thermal performance in thin-profile PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Compared with DMG2305UX and SI2301DS, BSA223SP delivers optimal balance of logic-level drive, thermal ruggedness (+150 °C), and compact PG-SC-75 packaging-making it preferred for miniaturized, high-reliability portable and medical applications where gate drive simplicity and temperature margin are critical.

Availability

BSA223SP is available at Aetrix Electronics and suitable for LED backlight control, USB power switching, low-power sensor bias, and small-solenoid driving requiring stable component supply and long-term lifecycle support.

Supply support for BSA223SP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The OptiMOS™-P product line targets high-efficiency, logic-compatible power switches for battery-operated and thermally constrained applications, emphasizing low gate charge, avalanche robustness, and extended temperature operation.

FAQ

Is BSA223SP suitable for high-side switching configurations?

Yes. As a P-channel MOSFET, BSA223SP is inherently suited for high-side switching where the source connects to the positive rail and the drain feeds the load. Its −20 V V_DS rating and −1.2 V typical V_GS(th) allow direct interface with 3.3 V or 5 V controllers without level shifting, provided gate drive remains referenced to source potential.

What is the maximum continuous drain current at 85 °C ambient?

At T_A = 85 °C, the continuous drain current is derated to approximately −0.22 A, calculated from the thermal resistance R_thJA = 500 K/W and P_tot = 0.25 W, assuming no heatsinking. This value aligns with the ID vs. TA curve on page 4 of the datasheet, where ID drops linearly from −0.39 A at 25 °C to −0.31 A at 70 °C.

Does BSA223SP require external gate resistors for EMI suppression?

Not strictly required, but recommended. With t_r/t_f < 8 ns and Q_g < 0.62 nC, fast edge rates can generate radiated emissions. A 10–47 Ω series gate resistor reduces dv/dt without compromising switching speed significantly, especially in noise-sensitive applications like medical or audio equipment.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = −1.0 to −1.33 V at −0.39 A and t_rr = 7.6–9.5 ns - higher forward drop and slower recovery than most Schottky diodes (typically V_F ≈ 0.3–0.5 V, t_rr < 1 ns). It is adequate for low-frequency freewheeling but not optimal for high-frequency synchronous rectification where Schottky replacement is advised.