Infineon Technologies BSB008NE2LXXUMA1

Overview

BSB008NE2LXXUMA1 from Infineon Technologies is a 25 V N-channel enhancement-mode Power-MOSFET in CanPAK-MX package, optimized for e-fuse and OR-ing applications. It delivers ultra-low R_DS(on) of 0.8 mΩ (max), supports 180 A continuous drain current at T_C = 25 °C, and features double-sided cooling with <0.7 mm profile for high-density power systems.

For engineers reviewing the BSB008NE2LXXUMA1 datasheet, BSB008NE2LXXUMA1 pinout, BSB008NE2LXXUMA1 application, or BSB008NE2LXXUMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, Q_g = 258 nC (0–10 V), Q_oss = 74 nC, avalanche ruggedness (E_AS = 600 mJ), and JEDEC-qualified thermal performance in compact CanPAK-MX footprint.

Technical Context

This device employs trench-gate superjunction technology to achieve sub-1 mΩ on-resistance in a low-profile surface-mount package. Its dual-side thermal interface enables efficient heat extraction via both top and bottom copper layers, supporting high-current DC/DC output stages and hot-swap controllers.

The MOSFET is characterized for stable operation across –40 °C to +150 °C junction temperature, with 100% avalanche testing and 100% gate resistance screening. Gate charge parameters (Q_g, Q_gd, Q_oss) are specified at V_DD = 12 V and I_D = 30 A, enabling accurate switching loss estimation in synchronous buck and OR-ing topologies.

Key Specifications

Pinout & Package

BSB008NE2LXXUMA1 uses the CanPAK-MX package - a double-sided cooled, leadless, copper-clip封装 with exposed top and bottom thermal pads. The package outline conforms to DirectFET® MX footprint (licensed from International Rectifier) and supports automated optical inspection and reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar e-fuse and OR-ing applications.

Compared with IRF6712MTRPBF and DMTH10H025LPSQ-13, BSB008NE2LXXUMA1 offers the lowest R_DS(on) and unique double-sided cooling-enabling 22% higher current density in 0.7 mm height-constrained OR-ing modules while maintaining JEDEC industrial reliability.

Availability

BSB008NE2LXXUMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom hot-swap controllers, industrial PLC backplanes, and redundant power OR-ing requiring stable component supply and long-term lifecycle support.

Supply support for BSB008NE2LXXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM Power-MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion and electronic fuse applications in datacenter and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 165 A (per Table 2, V_GS = 10 V). This derating reflects thermal limitations of the CanPAK-MX package under sustained high-power operation, and must be verified against actual PCB copper area and airflow conditions.

Does BSB008NE2LXXUMA1 support gate drive from 3.3 V logic?

No - the gate threshold voltage range is 1.2–2.0 V, but R_DS(on) is only guaranteed ≤0.8 mΩ at V_GS = 10 V. At 3.3 V, R_DS(on) rises above 3 mΩ (per Figure 6), causing excessive conduction loss; a dedicated 5–10 V gate driver is required for rated performance.

Is the body diode suitable for synchronous rectification in buck converters?

Yes - the body diode has V_SD = 0.78 V at 30 A and T_j = 25 °C (Table 7), with Q_rr = 20 nC. However, its reverse recovery behavior is not optimized for high-frequency ZVS; use only in forced-commutated or low-dV/dt synchronous buck topologies.

How is double-sided cooling implemented in the CanPAK-MX package?

The CanPAK-MX exposes copper drain terminals on both top and bottom surfaces. During assembly, both surfaces are soldered to dedicated PCB copper planes - top to a thermal pad on the component side, bottom to internal or backside ground/power planes - creating two parallel thermal conduction paths with combined R_thJC ≈ 0.6 K/W in optimized layouts.