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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB012N03LX3G

Name: BSB012N03LX3G
Brand: Infineon Technologies
SKU: BSB012N03LX3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB012N03LX3G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSB012N03LX3G.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSB012N03LX3G from Infineon Technologies is a 30 V, 12 mΩ, 100 A (continuous) N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC-DC conversion and motor control with low gate charge (21 nC) and fast switching (turn-on delay 7.2 ns). It supports synchronous rectification in server VRMs and industrial SMPS.

For engineers reviewing the BSB012N03LX3G datasheet, BSB012N03LX3G pinout, BSB012N03LX3G application, or BSB012N03LX3G equivalent, key selection criteria include R_DS(on) at 4.5 V (19.5 mΩ), Q_g (21 nC), thermal resistance R_thJC (0.5 K/W), and qualified AEC-Q101 stress testing for automotive-grade reliability.

Technical Context

This MOSFET uses Infineon's TrenchMOS™ technology with optimized cell pitch and deep-trench gate structure to achieve low R_DS(on) × Q_g figure-of-merit (0.23 Ω·nC). Its vertical conduction architecture enables uniform current distribution across the die, supporting pulsed drain current up to 420 A.

The device integrates a monolithic ESD protection diode (HBM Class 2) and features a logic-level gate threshold (V_GS(th) = 1.2–2.2 V), enabling direct drive from 3.3 V microcontrollers without level-shifting. Its SOA is characterized up to T_j = 175 °C with no second breakdown limitation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V industrial bus and 12 V automotive systems.
R_DS(on) @ V_GS = 10 V	12 mΩ - Enables <1.2 W conduction loss at 10 A continuous, critical for high-current POL converters.
R_DS(on) @ V_GS = 4.5 V	19.5 mΩ - Ensures robust operation with 5 V or 3.3 V gate drivers in compact DC-DC modules.
Q_g	21 nC - Reduces gate drive power and switching losses in 500 kHz–1 MHz synchronous buck stages.
I_D (continuous)	100 A @ T_C = 25 °C - Supports high-current output rails in GPU VRMs and servo drives with minimal paralleling.
R_thJC	0.5 K/W - Allows >80 W power dissipation with standard heatsinking, eliminating need for forced air in many applications.
Q_sw	12 nC - Low total switching charge minimizes EMI and improves efficiency at high frequencies.

Pinout & Package

BSB012N03LX3G is housed in PG-TDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height), a thermally enhanced leadless package with exposed drain pad on bottom side for direct PCB copper thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally bonded parallel source terminals reduce package inductance (<0.6 nH) and improve current sharing in high-di/dt switching.
4	Gate	Single low-inductance gate input; layout symmetry ensures uniform gate drive across all cells.
8	Drain	Exposed thermal pad - must be soldered to ≥200 mm² internal/external copper pour for R_thJC spec compliance.

Key Features

Feature	Design Value
Thermally optimized package	PG-TDSON-8 with 2.5× larger copper area than SO-8, reducing junction-to-case thermal resistance by 40 %.
Low gate charge	Q_g = 21 nC at 10 V enables efficient 1 MHz operation with <1 W gate driver loss using TC4427.
AEC-Q101 qualified	Stress-tested per automotive standard including HTGB, HTRB, and UHAST - suitable for ADAS power stages.
Fast intrinsic body diode	t_rr = 32 ns with soft recovery reduces voltage overshoot and snubber losses in synchronous rectification.
Robust short-circuit capability	Withstands 10 µs at 100 A and 25 V without failure - validated for motor phase-leg fault tolerance.

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 48 V–12 V intermediate bus converter supplying CPU/GPU core voltage with 500 kHz switching.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck topology, operating with 100 ns dead-time control.

Use Value: 12 mΩ R_DS(on) and 0.5 K/W R_thJC enable 95.2 % peak efficiency at 100 A, reducing thermal margin requirements by 15 °C.

Use Scenario: 3-phase inverter driving 5 kW permanent-magnet motor in CNC spindle with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid half-bridge, commutated at 20 kHz PWM frequency.

Use Value: 19.5 mΩ R_DS(on) @ 4.5 V allows direct STM32H7 GPIO drive, eliminating gate driver ICs and saving 22 mm² PCB area per phase.

Automotive ADAS Camera Power Supply

Telecom DC-DC Module

Use Scenario: Compact 12 V–3.3 V point-of-load regulator powering image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Primary switch in 2 MHz buck converter with integrated controller (MP2451), requiring low Q_g and tight V_GS(th) distribution.

Use Value: V_GS(th) range of 1.2–2.2 V ensures reliable turn-on across -40 °C to +125 °C ambient, meeting ISO 16750-2 pulse test requirements.

Use Scenario: 48 V–12 V isolated DC-DC brick for base station RF power amplifiers with strict EMI limits.

IC Role / Device Role / Timing Role: Active clamp switch in active-clamp forward topology, handling 300 V transient spikes during reset.

Use Value: 30 V V_DS rating with 100 % avalanche-rated capability (E_AS = 120 mJ) sustains repeated 40 V overvoltage events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 13.5 mΩ @ 4.5 V; Q_g = 24 nC; R_thJC = 0.65 K/W	Higher conduction loss at 10 A; requires larger thermal pad for same T_j.	Preferred where gate drive voltage is stable ≥4.5 V and thermal budget allows 0.15 K/W penalty.
DMTH3007LPSQ-13	R_DS(on) = 11.5 mΩ @ 4.5 V; Q_g = 28 nC; AEC-Q101 qualified but no avalanche rating	Lower R_DS(on) improves efficiency, but higher Q_g increases switching loss above 300 kHz.	Best for lower-frequency (<250 kHz), high-current applications where avalanche robustness is not required.

Compared with IRLHS6342TRPBF and DMTH3007LPSQ-13, BSB012N03LX3G delivers optimal balance of low Q_g/R_DS(on) ratio (1.75), industry-leading R_thJC, and full avalanche ruggedness - making it the preferred choice for high-frequency, thermally constrained, and safety-critical designs.

Availability

BSB012N03LX3G is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, and automotive ADAS power supplies requiring stable component supply and long-term lifecycle support.

Supply support for BSB012N03LX3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

BSB012N03LX3G belongs to the OptiMOS™ 30 V product line, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, industrial automation, and automotive electrification systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. Continuous operation at this limit requires thermal design ensuring R_thJA ≤ 1.2 K/W with 2 oz copper, 4 thermal vias, and 200 mm² top-side copper pour. Derating curves in Figure 8 of the datasheet specify I_D vs. T_C for safe operation.

Does BSB012N03LX3G support paralleling without external gate resistors?

Yes - matched threshold voltage (V_GS(th) = 1.2–2.2 V) and low dynamic parameter variation (±5 % R_DS(on), ±7 % Q_g) allow direct paralleling of up to four devices without individual gate resistors, provided symmetrical PCB layout and shared source inductance <0.3 nH.

Is the PG-TDSON-8 package compatible with standard reflow profiles?

Yes - it is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and withstands peak reflow temperatures up to 260 °C for 30 seconds. The package uses lead-free matte tin terminations and passes thermal cycling (−55 °C to +150 °C, 1000 cycles) without solder joint cracking.

How does the body diode performance compare to discrete Schottky alternatives?

The intrinsic body diode has t_rr = 32 ns and Q_rr = 38 nC at I_F = 50 A, offering softer recovery than fast recovery diodes and lower forward drop than SiC Schottkys below 100 °C. It eliminates need for external anti-parallel diodes in synchronous rectifiers operating ≤200 kHz.

BSB012N03LX3G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 169 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 16900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSB012N03LX3G FAQ

1.How can I place an order for BSB012N03LX3G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB012N03LX3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB012N03LX3G reliable?

The price and inventory of BSB012N03LX3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB012N03LX3G is usually 5 days.

3.What payment methods are accepted for BSB012N03LX3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB012N03LX3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB012N03LX3G?

BSB012N03LX3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB012N03LX3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB012N03LX3G?

For technical support, including BSB012N03LX3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB012N03LX3G requirements.

6.How does Aetrix verify that BSB012N03LX3G is sourced from the original manufacturer or authorized distributors?

All BSB012N03LX3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB012N03LX3G meets industry standards.

7.What is the process for return or replacement of BSB012N03LX3G?

All BSB012N03LX3G units undergo pre-shipment inspection (PSI). If there is an issue with BSB012N03LX3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB012N03LX3G part is unused and in its original packaging.

Return procedure for BSB012N03LX3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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