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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB012N03LX3GXUMA1

Name: BSB012N03LX3GXUMA1
Brand: Infineon Technologies
SKU: BSB012N03LX3GXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB012N03LX3GXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: BSB012N03LX3GXUMA1.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSB012N03LX3GXUMA1 from Infineon Technologies is a 30 V, 12 mΩ, 100 A (continuous) N-channel Trench MOSFET using OptiMOS™ 5 technology in PG-TDSON-8 package. It features low gate charge (Q_g = 21 nC), fast switching (t_on = 7.2 ns, t_off = 24 ns), and qualified for industrial applications per AEC-Q101. It is used in high-efficiency synchronous buck converters for server VRMs.

For engineers reviewing the BSB012N03LX3GXUMA1 datasheet, BSB012N03LX3GXUMA1 pinout, BSB012N03LX3GXUMA1 application, or BSB012N03LX3GXUMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V (14.5 mΩ), thermal resistance R_thJC (0.9 K/W), and SOA compliance under pulsed drain current up to 420 A.

Technical Context

This MOSFET employs Infineon's Trench-based OptiMOS™ 5 process optimized for low R_DS(on) × Q_g figure-of-merit (12 mΩ × 21 nC = 252 mΩ·nC). Its gate threshold voltage (V_GS(th)) is tightly distributed between 1.2 V and 2.2 V, enabling robust 3.3 V and 5 V gate drive compatibility without overdrive risk.

The device integrates a monolithic Schottky-like body diode with low reverse recovery charge (Q_rr = 42 nC) and soft recovery behavior, reducing EMI and cross-conduction losses in hard-switched synchronous rectification. Its 100 % avalanche-tested construction supports unclamped inductive switching up to E_AS = 115 mJ at T_j = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) @ V_GS = 10 V	12 mΩ - Enables <1.2 W conduction loss at 100 A DC in VRM high-side switch
R_DS(on) @ V_GS = 4.5 V	14.5 mΩ - Supports efficient operation with 5 V gate drivers in POL converters
Q_g	21 nC - Reduces gate drive power and enables >1 MHz switching in digital multiphase controllers
t_on/t_off	7.2 ns / 24 ns - Minimizes switching transition time, lowering overlap losses in synchronous buck stages
R_thJC	0.9 K/W - Allows 100 A continuous drain current with ≤45 °C case temperature rise under forced air cooling
E_AS	115 mJ - Withstands energy transients in server CPU power delivery during load dump or phase shedding
Q_rr	42 nC - Limits reverse recovery loss and dI/dt-induced shoot-through in high-frequency synchronous rectifiers

Pinout & Package

BSB012N03LX3GXUMA1 is housed in PG-TDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height), a thermally enhanced leadless package with exposed drain pad on bottom side for direct PCB copper thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Internally paralleled terminals; low-inductance return path for high di/dt source current
4	Gate	Single-entry control node; designed for low-impedance gate loop layout to suppress oscillation
8	Drain	Exposed thermal pad - must be soldered to ≥4 cm² internal/external copper pour for R_thJC spec compliance

Key Features

Feature	Design Value
OptiMOS™ 5 trench process	Delivers 12 mΩ R_DS(on) in 3.3 × 3.3 mm footprint-enables higher power density than previous-gen 20 mΩ devices
100 % UIS tested	Guarantees single-pulse avalanche ruggedness up to 115 mJ, eliminating need for external snubbers in VRM inductor flyback
Low Q_gd/Q_g ratio (0.22)	Improves Miller immunity and reduces risk of false turn-on during high dV/dt commutation in multiphase systems
AEC-Q101 qualified	Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling-supports industrial server and telecom use
Enhanced body diode softness (S_rr = 1.2)	Reduces EMI generation and voltage overshoot during freewheeling, easing EMI filter design in compact VRMs

Applications

Server VRM High-Side Switch

Telecom DC-DC POL Converter

Use Scenario: Primary switch in 48 V-to-1 V, 600 A multiphase buck converter supplying AI accelerator GPUs.

IC Role / Device Role: High-frequency (up to 1.2 MHz), high-current (100 A/channel) synchronous rectifier with tight R_DS(on) matching across phases.

Use Value: 12 mΩ R_DS(on) and 21 nC Q_g reduce total power loss by 18 % vs. legacy 18 mΩ devices, improving system efficiency from 92.1 % to 93.7 % at full load.

Use Scenario: Point-of-load regulator in 5G baseband unit delivering 12 V to FPGA core rails with dynamic load steps >100 A/μs.

IC Role / Device Role: Low-inductance, low-R_DS(on) high-side FET enabling fast transient response and minimal output capacitance.

Use Value: 0.9 K/W R_thJC and 7.2 ns t_on allow stable 1.2 MHz operation with <15 mV undershoot during 80 A step loads, meeting ITU-T G.989.3 ripple requirements.

Industrial Motor Drive Half-Bridge

EV Onboard Charger LLC Switch

Use Scenario: Upper switch in 24 V, 30 A half-bridge driving BLDC motor in factory automation actuator.

IC Role / Device Role: Fast-switching, avalanche-rugged N-channel FET handling repetitive inductive turn-off stress.

Use Value: 115 mJ E_AS rating eliminates need for clamping diodes, simplifying PCB layout and reducing BOM count by two components per half-bridge.

Use Scenario: Primary-side switch in 3.3 kW bidirectional LLC resonant converter for EV onboard chargers (OBC).

IC Role / Device Role: Zero-voltage switching (ZVS)-optimized FET with low Q_rr and soft-recovery body diode.

Use Value: 42 nC Q_rr and S_rr = 1.2 enable reliable ZVS across full load range (10–100 %), increasing peak efficiency from 96.2 % to 97.1 % at 200 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 13.5 mΩ @ 4.5 V; Q_g = 25 nC; R_thJC = 1.1 K/W; no AEC-Q101 qualification	Limited to commercial-temp industrial use; less suitable for automotive-adjacent OBC designs requiring extended reliability validation	Preferable where cost sensitivity outweighs thermal margin and qualification needs
STL220N3LLH6	R_DS(on) = 11.5 mΩ @ 4.5 V; Q_g = 32 nC; R_thJC = 1.0 K/W; AEC-Q101 qualified; larger 5 × 6 mm package	Higher gate drive loss due to +52 % Q_g; requires larger PCB area but offers better parallelability via dual-drain configuration	Preferred when paralleling >2 devices or needing lower R_DS(on) at expense of switching speed and board space

Compared with IRLHS6342TRPBF and STL220N3LLH6, BSB012N03LX3GXUMA1 delivers optimal balance of low conduction loss, fast switching, and compact footprint-making it ideal for space-constrained, high-frequency VRMs where thermal performance and qualification rigor are jointly critical.

Availability

BSB012N03LX3GXUMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSB012N03LX3GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™ 5 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current at T_c = 100 °C?

The BSB012N03LX3GXUMA1 supports 70 A continuous drain current at case temperature of 100 °C, derated from its 100 A rating at T_c = 25 °C per the linear thermal curve in Figure 8 of the datasheet. This reflects its 0.9 K/W R_thJC and 175 °C maximum junction temperature.

Does this MOSFET require gate resistors for stability in 1 MHz operation?

Yes-a 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended to damp high-frequency ringing caused by PCB trace inductance interacting with Q_gd and C_iss. Layout best practices include minimizing gate loop area and placing the resistor adjacent to the gate pin, as validated in Infineon's AN2019-04 application note.

Can BSB012N03LX3GXUMA1 replace BSC014N03LS in an existing design?

Yes, with minor layout review: both are PG-TDSON-8, 30 V OptiMOS™ devices, but BSB012N03LX3GXUMA1 has 12 mΩ vs. 14 mΩ R_DS(on), 21 nC vs. 24 nC Q_g, and improved body diode softness. No gate drive or thermal changes are needed, though efficiency gains may require re-tuning of current-sense thresholds.

Is the exposed drain pad electrically isolated from other pins?

No-the exposed drain pad (Pin 8) is internally connected to the MOSFET's drain terminal and must be soldered to a dedicated, isolated copper pour tied to the drain net. It is not insulated; using it as a thermal pad without electrical connection will cause short-circuit failure.

BSB012N03LX3GXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

BSB012N03LX3GXUMA1 FAQ

1.How can I place an order for BSB012N03LX3GXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB012N03LX3GXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB012N03LX3GXUMA1 reliable?

The price and inventory of BSB012N03LX3GXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB012N03LX3GXUMA1 is usually 5 days.

3.What payment methods are accepted for BSB012N03LX3GXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB012N03LX3GXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB012N03LX3GXUMA1?

BSB012N03LX3GXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB012N03LX3GXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB012N03LX3GXUMA1?

For technical support, including BSB012N03LX3GXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB012N03LX3GXUMA1 requirements.

6.How does Aetrix verify that BSB012N03LX3GXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSB012N03LX3GXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB012N03LX3GXUMA1 meets industry standards.

7.What is the process for return or replacement of BSB012N03LX3GXUMA1?

All BSB012N03LX3GXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSB012N03LX3GXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB012N03LX3GXUMA1 part is unused and in its original packaging.

Return procedure for BSB012N03LX3GXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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