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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB017N03LX3 G

Name: BSB017N03LX3 G
Brand: Infineon Technologies
SKU: BSB017N03LX3 G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB017N03LX3 G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSB017N03LX3 G.pdf

Description:: MOSFET N-CH 30V 32A/147A 2WDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSB017N03LX3 G from Infineon Technologies is an n-channel 30 V Power MOSFET optimized for high-frequency synchronous rectification and control FET roles in server VRMs and point-of-load converters. It delivers R_DS(on) = 1.7 mΩ (max, V_GS = 10 V), Q_g = 77 nC (typ), Q_oss = 50 nC, I_D = 147 A (T_C = 25 °C), and features double-sided cooling in a MG-WDSON-2 package.

For engineers reviewing the BSB017N03LX3 G datasheet, BSB017N03LX3 G pinout, BSB017N03LX3 G application, or BSB017N03LX3 G equivalent, key selection criteria include low gate charge × R_DS(on) figure of merit, avalanche ruggedness, JEDEC-qualified reliability, and compatibility with DirectFET® MX footprint for thermal and layout optimization.

Technical Context

This OptiMOS™30V device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) and minimized switching losses. Its gate charge profile supports fast turn-on/turn-off (t_d(on) = 5.8 ns, t_f = 6 ns) while maintaining low EMI in synchronous buck topologies.

The MOSFET integrates a robust body diode with Q_rr = 50 nC and V_SD = 0.79 V (typ, I_F = 30 A), enabling efficient reverse recovery in high-duty-cycle sync-FET operation. Thermal design leverages both bottom-side (R_thJC = 1.0 K/W) and top-side cooling paths via its exposed-drain MG-WDSON-2 package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input VRM stages and 5 V/3.3 V PoL rails
R_DS(on), max	1.7 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 25 A, critical for high-current CPU/GPU VRMs
I_D, cont	147 A @ T_C = 25 °C - Supports multi-phase current sharing in server power stages
Q_g, typ	77 nC @ V_GS = 0–10 V - Low drive power requirement for 500 kHz–1 MHz switching frequencies
Q_oss	50 nC - Reduces turn-off energy loss and improves light-load efficiency in sync-FET mode
E_AS	225 mJ - Confirmed single-pulse avalanche capability for overvoltage transient robustness
R_thJC	1.0 K/W (bottom) - Enables direct thermal coupling to heatsink or PCB copper, supporting >300 W/cm² power density

Pinout & Package

BSB017N03LX3 G uses the MG-WDSON-2 package: a low-profile (<0.7 mm), double-sided cooling, exposed-drain DirectFET®-MX-compatible module with solderable top-side source terminals and bottom-side drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Drain (bottom pad)	Main current path output / heat sink interface	Primary thermal and electrical connection to PCB ground plane or heatsink; handles full load current
Source (top terminals)	Reference node for gate drive and current sensing	Two parallel solderable pads provide low-inductance return path and enable Kelvin source sensing
Gate (top terminal)	Control electrode for channel modulation	Single low-parasitic-input terminal compatible with standard gate drivers; R_G = 0.5 Ω (typ)

Key Features

Feature	Design Value
Optimized for high-frequency DC/DC conversion	Q_g × R_DS(on) = 131 mΩ·nC - industry-leading FoM enabling >1 MHz operation without excessive drive loss
Double-sided cooling architecture	R_thJC = 1.0 K/W (bottom) + top-side source thermal path - enables >2× power handling vs. standard SO-8 in same footprint
100% avalanche tested	E_AS = 225 mJ - guarantees ruggedness against inductive switching transients in unregulated bus conditions
Low-profile MG-WDSON-2 package	Height < 0.7 mm - allows integration under low-clearance components (e.g., memory modules, ASICs) in dense server boards
JEDEC-qualified reliability	Compliant with J-STD-020 (reflow) and JESD22 (HTOL, HAST) - validated for 10+ year field life in telecom/datacom infrastructure

Applications

Server On-Board Voltage Regulation

Synchronous Rectification in PoL Converters

Use Scenario: Primary control FET in multiphase 48 V–12 V intermediate bus converters feeding CPU/GPU VRMs on enterprise servers.

IC Role / Device Role / Timing Role: High-side switching element operating at 500 kHz–1 MHz with precise duty-cycle control and minimal dead-time loss.

Use Value: 1.7 mΩ R_DS(on) and 77 nC Q_g reduce total power loss by ≥15% vs. legacy 30 V MOSFETs, directly improving system PUE.

Use Scenario: Low-side synchronous rectifier in 12 V–1.8 V point-of-load buck converters powering AI accelerators and FPGAs.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-V_SD (0.79 V) enable zero-voltage switching during freewheeling phase.

Use Value: Q_rr = 50 nC and low C_oss minimize reverse recovery loss and EMI, sustaining >95% efficiency at 50 A load.

High-Density Telecom Power Modules

Industrial High-Performance Computing Power Supplies

Use Scenario: Dual-role FET in compact 1U telecom rectifiers requiring high power density and forced-air cooling constraints.

IC Role / Device Role / Timing Role: Bidirectional switch supporting both forward and reverse conduction in hybrid topologies with active clamp.

Use Value: Double-sided cooling and R_thJC = 1.0 K/W allow 147 A continuous current with <40 °C junction rise, eliminating need for external heatsinks.

Use Scenario: Primary switch in modular 2 kW redundant power supplies for edge AI inference racks.

IC Role / Device Role / Timing Role: Robust switching element rated for 400 A pulsed drain current and 225 mJ avalanche energy under fault conditions.

Use Value: 100% avalanche testing and JEDEC qualification ensure uptime compliance in mission-critical industrial deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 2.0 mΩ (max), Q_g = 54 nC, no double-sided cooling	Limited to single-sided cooling; lower current rating (120 A)	Preferred where gate drive strength is constrained but thermal budget permits higher R_thJA
STL220N3LLH6	R_DS(on) = 1.8 mΩ (max), Q_g = 85 nC, standard PowerFLAT 5x6	No top-side source terminals; higher package inductance limits >1 MHz use	Selected when footprint compatibility with legacy PowerFLAT designs is required over peak efficiency

Compared with IRF6642TRPBF and STL220N3LLH6, BSB017N03LX3 G offers superior power density via dual thermal interfaces and best-in-class FoM-enabling smaller magnetics, fewer phases, and reduced board area in next-gen VRMs.

Availability

BSB017N03LX3 G is available at Aetrix Electronics and suitable for server on-board power, high-performance computing power management, and synchronous rectification applications requiring stable component supply across multi-year production cycles.

Supply support for BSB017N03LX3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The OptiMOS™ product line targets high-efficiency, high-power-density DC/DC conversion in datacenter, telecom, and industrial computing-designed specifically to exceed VR13/IMVP9 and Telcordia GR-1257-CORE requirements.

FAQ

What is the maximum continuous drain current for BSB017N03LX3 G at 100 °C case temperature?

The maximum continuous drain current is 93 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the final datasheet. This derating reflects thermal limits under real-world heatsink conditions and must be verified with actual board-level thermal resistance measurements.

Does BSB017N03LX3 G support gate drive voltages below 10 V?

Yes-R_DS(on) is characterized down to V_GS = 4.5 V (2.0–2.5 mΩ max). However, optimal performance requires ≥10 V to fully enhance the channel and minimize conduction loss; gate plateau voltage is 2.8 V per Table 6.

How does the MG-WDSON-2 package enable double-sided cooling?

The MG-WDSON-2 exposes the drain on the bottom for PCB copper cooling and provides solderable source terminals on top for optional heatsink attachment or thermal vias. This dual-path design reduces total thermal resistance by distributing heat across both PCB and enclosure surfaces.

Is BSB017N03LX3 G suitable for hard-switched ZVS or soft-switched topologies?

It is optimized for hard-switched synchronous buck converters up to 1 MHz. While its low Q_oss and fast switching support some resonant transitions, it lacks integrated driver or adaptive dead-time control-so external timing control is required for reliable ZVS implementation.

BSB017N03LX3 G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 147A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 57W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSB017N03LX3 G FAQ

1.How can I place an order for BSB017N03LX3 G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB017N03LX3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB017N03LX3 G reliable?

The price and inventory of BSB017N03LX3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB017N03LX3 G is usually 5 days.

3.What payment methods are accepted for BSB017N03LX3 G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB017N03LX3 G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB017N03LX3 G?

BSB017N03LX3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB017N03LX3 G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB017N03LX3 G?

For technical support, including BSB017N03LX3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB017N03LX3 G requirements.

6.How does Aetrix verify that BSB017N03LX3 G is sourced from the original manufacturer or authorized distributors?

All BSB017N03LX3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB017N03LX3 G meets industry standards.

7.What is the process for return or replacement of BSB017N03LX3 G?

All BSB017N03LX3 G units undergo pre-shipment inspection (PSI). If there is an issue with BSB017N03LX3 G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB017N03LX3 G part is unused and in its original packaging.

Return procedure for BSB017N03LX3 G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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