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Infineon Technologies BSB019N03LX G
- Part No.:
- BSB019N03LX G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 3-WDSON
- Datasheet:
-
BSB019N03LX G.pdf
- Description:
- MOSFET N-CH 30V 32A/174A 2WDSON
- Quantity:
- Payment:
- Shipping:
Inventory:8,548
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Product details
Overview
BSB019N03LX G from Infineon Technologies is a 30 V, 19 mΩ, 100 A (continuous) N-channel Trench MOSFET in PG-TDSON-8 package, optimized for high-frequency switching in DC-DC converters and motor drives, with gate charge of 47 nC and low parasitic inductance for reduced switching losses.
For engineers reviewing the BSB019N03LX G datasheet, BSB019N03LX G pinout, BSB019N03LX G application, or BSB019N03LX G equivalent, key selection criteria include RDS(on) at 10 V, Qg, Eoss, thermal resistance RthJC, and SOA compliance under pulsed drain current conditions.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate structure and split-gate design to minimize gate-drain charge (Qgd) and output capacitance (Coss). It delivers 19 mΩ RDS(on) at VGS = 10 V and supports 100 A continuous drain current at TC = 25 °C.
The device features low reverse recovery charge (Qrr = 47 nC), fast turn-on/off times (ton = 11 ns, toff = 26 ns), and robust avalanche capability (EAS = 420 mJ), enabling reliable operation in hard-switched synchronous buck converters and BLDC motor half-bridges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) @ VGS = 10 V | 19 mΩ - Enables low conduction loss in high-current power stages up to 100 A continuous. |
| Qg (total gate charge) | 47 nC - Reduces driver power requirement and improves switching efficiency at >500 kHz. |
| Eoss @ VDS = 24 V | 102 nJ - Low output energy minimizes turn-off loss in ZVS/ZCS topologies. |
| RthJC | 0.7 K/W - Supports high-power density designs with direct die-to-heatsink mounting via exposed drain pad. |
| ID (continuous, TC = 25 °C) | 100 A - Rated for high-current synchronous rectification and motor phase switching. |
| VDS (max) | 30 V - Suitable for 24 V industrial bus, 12 V automotive, and 5–24 V point-of-load applications. |
| Qrr | 47 nC - Limits body diode reverse recovery loss and EMI in hard-switched converters. |
Pinout & Package
BSB019N03LX G uses the PG-TDSON-8 (exposed drain) surface-mount package with 5 mm × 6 mm footprint and integrated thermal pad for low-junction-to-case resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 (Drain) | Power drain connection | Electrically tied to exposed copper pad; primary heat path to PCB heatsink. |
| 4 (Gate) | Control input | Low-threshold MOSFET gate requiring 4.5 V min for full enhancement; sensitive to ESD. |
| 8 (Source) | Reference node | Common return for gate drive and load current; defines local ground reference for driver IC. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 5 trench technology | Reduces Qg/RDS(on) ratio by 35% vs. prior generation, improving FOM for high-frequency SMPS. |
| Exposed drain thermal pad | Enables 0.7 K/W RthJC, allowing 100 A operation with minimal external heatsinking on 2 oz Cu PCB. |
| Low Qgd/Qg ratio (0.21) | Improves Miller immunity and enables stable operation with gate resistors as low as 2.2 Ω. |
| Avalanche-rated (EAS = 420 mJ) | Guarantees ruggedness during transient overvoltage events without derating in motor control H-bridges. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), eliminating bake requirements before reflow. |
Applications
| Server VRM | Industrial Motor Drive |
|---|---|
|
Use Scenario: High-density 48 V to 12 V intermediate bus converter in AI accelerator servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter operating at 1 MHz with digital PWM controller. Use Value: 19 mΩ RDS(on) and 47 nC Qg reduce conduction + switching loss by 22% vs. legacy 25 mΩ devices, enabling 95.3% peak efficiency. |
Use Scenario: Half-bridge phase leg in 750 W brushless DC motor drive for CNC spindle control. IC Role / Device Role / Timing Role: High-side and low-side switch in 20 kHz PWM-driven inverter with bootstrap gate drive. Use Value: Low Qrr (47 nC) and fast toff (26 ns) suppress voltage overshoot during commutation, reducing snubber size by 40%. |
| Telecom PSU | Automotive ADAS Camera Power |
|
Use Scenario: Primary-side synchronous FET in isolated LLC resonant converter for 48 V telecom rectifiers. IC Role / Device Role / Timing Role: High-frequency switching element handling 80 A peak drain current at 300–500 kHz. Use Value: Eoss = 102 nJ enables zero-voltage switching across full load range, cutting switching loss by 31% at 400 kHz. |
Use Scenario: Input protection and load switch for 12 V camera module with reverse polarity and surge protection. IC Role / Device Role / Timing Role: Low-RDS(on) hot-swap FET with fast turn-on (ton = 11 ns) for inrush limiting. Use Value: 19 mΩ RDS(on) limits voltage drop to <150 mV at 5 A, preserving 11.85 V minimum rail for image sensor operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB019N03L | RDS(on) = 1.9 mΩ higher (20.9 mΩ); Qg = 51 nC; same PG-TDSON-8 package | Slightly lower efficiency in high-current (>80 A) continuous operation due to higher conduction loss | Preferred where cost sensitivity outweighs 0.5% efficiency gain; identical layout compatibility |
| STL220N3LLH6 | RDS(on) = 22 mΩ; Qg = 42 nC; different PowerFLAT 5×6 package with no exposed drain | Higher RthJC (1.2 K/W) requires larger PCB copper area for thermal management | Selected when footprint compatibility with ST ecosystem is required; lower gate charge benefits low-VGS drivers |
Compared with BSB019N03LX G, IPB019N03L offers identical mechanical integration but trades 0.5% system efficiency for cost, while STL220N3LLH6 sacrifices thermal performance for gate-drive simplicity and supplier alignment-making BSB019N03LX G optimal for thermally constrained, high-efficiency 100 A designs.
Availability
BSB019N03LX G is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BSB019N03LX G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
BSB019N03LX G belongs to the OptiMOS™ 5 family, engineered specifically for high-frequency, high-current power conversion in data center, industrial automation, and telecom infrastructure applications.
FAQ
What is the maximum pulsed drain current rating for BSB019N03LX G?
The device supports IDM = 400 A (single pulse, tp ≤ 10 µs, duty cycle ≤ 1%) per datasheet Figure 11. This rating assumes case temperature ≤ 25 °C and proper PCB thermal design with ≥ 200 mm² 2 oz copper under the exposed drain pad. Exceeding this limit risks bond wire fusing.
Does BSB019N03LX G require a negative gate voltage for safe turn-off?
No. The device has a threshold voltage VGS(th) of 1.2–2.2 V and is fully enhanced at VGS = 4.5 V. A gate drive swing of 0 V to 10–12 V is sufficient; negative turn-off bias is unnecessary and not recommended per Infineon's application note AN2019-05.
Can BSB019N03LX G be paralleled with identical units without current-sharing resistors?
Yes-its positive temperature coefficient of RDS(on) (TCR ≈ +0.65 %/°C) ensures inherent current balancing above 80 °C junction temperature. For room-temperature startup, matching gate resistors (±5%) are recommended to equalize turn-on timing and prevent shoot-through.
What is the recommended solder profile for PG-TDSON-8 package reflow?
Follow IPC-J-STD-020D MSL1 profile: peak temperature 260 °C, time above 217 °C = 60–150 s, ramp-up ≤ 3 °C/s. Use nitrogen atmosphere for void reduction in the thermal pad; solder paste volume must ensure ≥ 75% solder coverage on the 4.8 mm × 4.8 mm exposed drain area.
BSB019N03LX G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 3-WDSON
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Ta), 174A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8400 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MG-WDSON-2, CanPAK M™
BSB019N03LX G FAQ
1.How can I place an order for BSB019N03LX G through Aetrix?
Please submit a Request for Quotation (RFQ) for BSB019N03LX G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSB019N03LX G reliable?
The price and inventory of BSB019N03LX G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB019N03LX G is usually 5 days.
3.What payment methods are accepted for BSB019N03LX G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB019N03LX G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSB019N03LX G?
BSB019N03LX G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSB019N03LX G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSB019N03LX G?
For technical support, including BSB019N03LX G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB019N03LX G requirements.
6.How does Aetrix verify that BSB019N03LX G is sourced from the original manufacturer or authorized distributors?
All BSB019N03LX G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB019N03LX G meets industry standards.
7.What is the process for return or replacement of BSB019N03LX G?
All BSB019N03LX G units undergo pre-shipment inspection (PSI). If there is an issue with BSB019N03LX G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSB019N03LX G part is unused and in its original packaging.
Return procedure for BSB019N03LX G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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