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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB028N06NN3GXUMA2

Name: BSB028N06NN3GXUMA2
Brand: Infineon Technologies
SKU: BSB028N06NN3GXUMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB028N06NN3GXUMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MN

Datasheet:: BSB028N06NN3GXUMA2.pdf

Description:: TRENCH 40<-<100V

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Product details

Overview

BSB028N06NN3GXUMA2 from Infineon is a 60 V, 2.8 mΩ N-channel Power-MOSFET in DirectFET™ MG-WDSON-5 package, optimized for high-efficiency DC/DC converters. It delivers 90 A continuous drain current at T_C = 25 °C, features dual-sided cooling, 100% avalanche tested ruggedness, and low-profile (<0.7 mm) packaging for compact power stages.

For engineers reviewing the BSB028N06NN3GXUMA2 datasheet, BSB028N06NN3GXUMA2 pinout, BSB028N06NN3GXUMA2 application, or BSB028N06NN3GXUMA2 equivalent, key selection criteria include R_DS(on) ≤ 2.8 mΩ at V_GS = 10 V, Q_g = 108–143 nC, thermal resistance R_thJC (bottom) = 1.0 K/W, and DirectFET™-specific mounting requirements for PCB-level thermal management.

Technical Context

This OptiMOS™3 MOSFET uses trench-based silicon technology with enhanced charge balance for low gate charge × R_DS(on) figure-of-merit (FOM), enabling high-frequency switching in synchronous buck converters and OR-ing circuits. Its dual-sided cooling architecture supports thermal dissipation through both top and bottom copper interfaces.

The device integrates a robust body diode with t_rr = 60 ns and Q_rr = 87 nC, supporting hard-switched and ZVS topologies. Gate threshold voltage V_GS(th) = 2–4 V ensures compatibility with standard 5 V and 3.3 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V input bus applications with margin
R_DS(on) max	2.8 mΩ @ V_GS = 10 V, I_D = 30 A - Enables <1.5 W conduction loss at 30 A in 12 V output rails
I_D cont	90 A @ T_C = 25 °C - Supports high-current phases in server VRMs and telecom PSUs
Q_g total	108–143 nC - Determines gate driver power requirement and switching loss trade-off
R_thJC (bottom)	1.0 K/W - Enables >70 W power dissipation with 70 K temperature rise to case (bottom side)
t_rr	60 ns - Limits reverse recovery losses during high-frequency synchronous rectification
E_AS	590 mJ - Confirmed single-pulse avalanche energy rating for system-level fault robustness

Pinout & Package

BSB028N06NN3GXUMA2 uses the DirectFET™ MG-WDSON-5 package: ultra-low-profile (0.65 mm typical height), top-side source and gate terminals, bottom-side drain pad for thermal and electrical connection. No discrete leads - soldered directly to PCB copper planes.

Pin/Terminal	Circuit Role	Design Meaning
Top Side – Source	Source connection (S)	Exposed metal pad on top surface; connects to source net and provides secondary thermal path
Top Side – Gate	Gate control (G)	Small top-side pad; requires controlled trace routing to minimize gate loop inductance
Bottom Side – Drain	Drain connection (D)	Full-bottom copper area; primary thermal interface and high-current return path

Key Features

Feature	Design Value
Dual-sided cooling	Simultaneous heat extraction via top-source and bottom-drain interfaces reduces junction-to-ambient thermal resistance by up to 35% vs. standard SO-8
Low parasitic inductance	DirectFET™ layout minimizes source inductance (<0.3 nH), critical for fast dI/dt switching stability
100% avalanche tested	Every unit validated to withstand 590 mJ single-pulse avalanche energy without degradation
Optimized FOM (Q_g × R_DS(on))	~300 mΩ·nC - Enables >95% efficiency in 400 kHz–1 MHz DC/DC converters at 12 V output
Pb-free & RoHS compliant	Lead-free plating meets JEDEC J-STD-020 reflow profile and industrial environmental compliance

Applications

Server Voltage Regulator Modules (VRMs)

Telecom DC/DC Converters

Use Scenario: High-density 48 V to 12 V or 5 V step-down conversion in AI accelerator racks.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500–800 kHz with tight duty-cycle control.

Use Value: 2.8 mΩ R_DS(on) and 1.0 K/W R_thJC enable 85 A continuous operation at <95 °C case temperature under forced air.

Use Scenario: Isolated 48 V input, 12 V output telecom power supply with high reliability requirements.

IC Role / Device Role / Timing Role: Primary-side MOSFET in active clamp forward or half-bridge topology.

Use Value: 590 mJ E_AS rating ensures survivability during line transients and short-circuit events per GR-1089-CORE.

OR-ing Controllers

Industrial Motor Drives (Low-Voltage)

Use Scenario: Redundant 24 V/48 V power rail combining in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-loss back-to-back switch replacing ideal diodes in hot-swap circuits.

Use Value: Body diode t_rr = 60 ns and Q_rr = 87 nC minimize cross-conduction losses during dynamic load sharing.

Use Scenario: Half-bridge gate drive stage for 24 V BLDC motor control in factory automation.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, driven by isolated gate driver.

Use Value: V_GS(th) = 2–4 V ensures clean turn-on with 3.3 V logic-level drivers, reducing external level-shifting complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL6217PBF	R_DS(on) = 3.8 mΩ @ 10 V; TO-220AB package; R_thJA = 62 K/W (no dual cooling)	Limited to lower-frequency, lower-current designs due to higher R_DS(on) and thermal resistance	Prefer when legacy through-hole assembly or cost-sensitive non-high-density layouts are required
STL220N6F7	R_DS(on) = 2.2 mΩ @ 10 V; PowerFLAT™ 5x6 package; no top-side source terminal	Lacks dual-sided cooling; relies solely on bottom-side thermal path; higher gate charge (Q_g = 150 nC)	Choose when board space allows larger footprint but top-side access is unavailable

Compared with IRL6217PBF and STL220N6F7, BSB028N06NN3GXUMA2 offers superior thermal performance via dual-sided cooling and lowest Q_g × R_DS(on) FOM among the three-critical for high-frequency, high-power-density DC/DC stages where thermal headroom and switching loss dominate design margins.

Availability

BSB028N06NN3GXUMA2 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial OR-ing applications requiring stable component supply, long-term lifecycle support, and qualified industrial-grade reliability.

Supply support for BSB028N06NN3GXUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive MCUs, and security solutions, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™3 product line-designed specifically for high-efficiency, high-current DC/DC conversion in data center, telecom, and industrial power systems where thermal density and switching loss are primary constraints.

FAQ

What is the maximum recommended gate voltage for BSB028N06NN3GXUMA2?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for V_GS = 10 V. Operating above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk. For reliable long-term operation, keep V_GS ≤ 12 V in normal use, with transient spikes limited to ≤15 V per JEDEC JESD22-A114.

Does BSB028N06NN3GXUMA2 require a gate resistor for stability?

Yes-a gate resistor (R_G) of 2.2–4.7 Ω is recommended to dampen ringing caused by PCB trace inductance interacting with the device's low C_iss and gate resistance (~0.5 Ω). This prevents unintended oscillation during fast edge transitions and ensures robust turn-on/turn-off timing in high-dI/dt applications like multiphase VRMs.

Can BSB028N06NN3GXUMA2 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. However, strict layout symmetry (matched gate and source paths), identical thermal mounting, and individual gate resistors are mandatory. Derate total current by ≥15% versus sum of individual ratings to account for parametric spread and thermal coupling effects.

Is the body diode suitable for synchronous rectification?

The integrated body diode has t_rr = 60 ns and Q_rr = 87 nC, making it usable in moderate-frequency synchronous rectification (≤300 kHz). However, for optimal efficiency above 400 kHz, an external Schottky or GaN FET is preferred-this diode is best leveraged for fault protection and dead-time conduction rather than primary rectification.

BSB028N06NN3GXUMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DirectFET™ Isometric MN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 102µA

Gate Charge (Qg) (Max) @ Vgs:: 143 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-5-3

BSB028N06NN3GXUMA2 FAQ

1.How can I place an order for BSB028N06NN3GXUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB028N06NN3GXUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB028N06NN3GXUMA2 reliable?

The price and inventory of BSB028N06NN3GXUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB028N06NN3GXUMA2 is usually 5 days.

3.What payment methods are accepted for BSB028N06NN3GXUMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB028N06NN3GXUMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB028N06NN3GXUMA2?

BSB028N06NN3GXUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB028N06NN3GXUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB028N06NN3GXUMA2?

For technical support, including BSB028N06NN3GXUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB028N06NN3GXUMA2 requirements.

6.How does Aetrix verify that BSB028N06NN3GXUMA2 is sourced from the original manufacturer or authorized distributors?

All BSB028N06NN3GXUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB028N06NN3GXUMA2 meets industry standards.

7.What is the process for return or replacement of BSB028N06NN3GXUMA2?

All BSB028N06NN3GXUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with BSB028N06NN3GXUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB028N06NN3GXUMA2 part is unused and in its original packaging.

Return procedure for BSB028N06NN3GXUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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