Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB044N08NN3GXUMA1

Name: BSB044N08NN3GXUMA1
Brand: Infineon Technologies
SKU: BSB044N08NN3GXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSB044N08NN3GXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSB044N08NN3GXUMA1.pdf

Description:: MOSFET N-CH 80V 18A/90A 2WDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,855

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSB044N08NN3GXUMA1 from Infineon Technologies is an N-channel 80 V, 4.4 mΩ R_DS(on) Power-MOSFET in CanPAK™ M (MG-WDSON-2) package, optimized for high-efficiency DC/DC converters. It delivers 90 A continuous drain current at T_C = 25 °C, features dual-sided cooling, <0.7 mm profile, and 100% avalanche tested ruggedness for automotive and industrial power stages.

For engineers reviewing the BSB044N08NN3GXUMA1 datasheet, BSB044N08NN3GXUMA1 pinout, BSB044N08NN3GXUMA1 application, or BSB044N08NN3GXUMA1 equivalent, key selection criteria include its 3.7–4.4 mΩ R_DS(on) at V_GS = 10 V, 55–73 nC total gate charge, 1.0 K/W junction-to-case thermal resistance (bottom side), and compatibility with DirectFET® MN footprint layouts.

Technical Context

This OptiMOS™3 device employs trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low Q_g/R_DS(on) figure-of-merit (FOM) enables high-frequency operation in synchronous buck converters, while dual-sided cooling supports thermal management in compact, double-sided PCB assemblies.

The MOSFET integrates a robust body diode with 55 ns reverse recovery time and 110 nC Q_rr, enabling efficient hard-switched and quasi-resonant topologies. Gate threshold voltage (2.0–3.5 V) ensures stable turn-on under noisy gate drive conditions, and ±20 V V_GS rating supports standard 12 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input bus and 60 V transient clamping in automotive and server PSUs
R_DS(on) max	4.4 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1.3 W conduction loss at 30 A, critical for high-current POL converters
I_D cont	90 A at T_C = 25 °C - Supports high-power density designs without forced air cooling
Q_g	55–73 nC - Low gate drive energy reduces driver IC stress and EMI in >500 kHz switching applications
R_thJC (bottom)	1.0 K/W - Enables direct thermal interface to heatsink or copper plane, essential for dual-sided cooling implementation
E_AS	660 mJ - Confirmed single-pulse avalanche capability allows reliable operation under inductive load switching faults
V_GS(th)	2.0–3.5 V - Ensures clean turn-on margin above typical noise floor in noisy automotive environments

Pinout & Package

Package: CanPAK™ M (MG-WDSON-2), surface-mount, low-profile (<0.7 mm), dual-sided cooling capable, compatible with DirectFET® MN footprint.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top & Bottom Copper Pads)	Power output / heat path	Both top and bottom metal layers serve as drain terminals-enables simultaneous thermal dissipation to PCB and heatsink
Source (Bottom-side Solder Pad)	Reference node / return path	Single dedicated source pad on bottom side provides low-inductance connection to ground plane
Gate (Bottom-side Solder Pad)	Control input	Isolated gate pad minimizes coupling to high-dI/dt drain paths, reducing spurious turn-on risk

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	Enables >95% efficiency in 400 kHz–1 MHz synchronous buck converters with 12–48 V input
Dual-sided cooling	Reduces system-level thermal resistance by up to 40% vs. single-sided packages, supporting higher power density
Low parasitic inductance	Minimizes voltage overshoot during hard switching, easing EMI filter design and layout constraints
100% avalanche tested	Guarantees robustness against inductive energy dump in motor drives and converter short-circuit events
JEDEC-qualified	Validated for automotive-grade reliability per J-STD-20 and JESD22, including temperature cycling and humidity testing

Applications

Automotive DC/DC Converters

Server Point-of-Load (POL) Regulators

Use Scenario: 12 V to 1 V/30 A conversion in ADAS domain controllers with strict thermal envelope.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck stage, operating at 800 kHz.

Use Value: 4.4 mΩ R_DS(on) and 1.0 K/W R_thJC enable 65 °C case temperature rise at full load without heatsink.

Use Scenario: 48 V to 3.3 V conversion in AI accelerator card power delivery network.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck converter with dual-phase control.

Use Value: Dual-sided cooling allows mounting on both board sides, freeing top-side space for FPGA routing.

Industrial Motor Drive Half-Bridge

Telecom 48 V Intermediate Bus Converter

Use Scenario: 24 V H-bridge for BLDC fan control in HVAC systems with stall protection.

IC Role / Device Role / Timing Role: Low-side switch handling 30 A pulsed current with integrated body diode commutation.

Use Value: 55 ns t_rr and 110 nC Q_rr reduce switching loss and diode recovery spikes during PWM dead-time.

Use Scenario: 48 V to 12 V non-isolated bus converter in 5G base station RF power supply.

IC Role / Device Role / Timing Role: Primary-side MOSFET in high-frequency synchronous forward topology.

Use Value: 660 mJ E_AS withstands repeated inductive flyback transients during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7107TRPBF	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 62 nC, same MG-WDSON-2 package	Slightly lower R_DS(on) but higher Crss (45 pF vs. 38 pF), increasing Miller-induced turn-off delay	Preferable where conduction loss dominates; verify gate drive strength for faster dV/dt immunity
STL220N8F7AG	R_DS(on) = 4.2 mΩ @ 10 V, Q_g = 82 nC, PowerFLAT™ 5x6 package	Higher Q_g increases gate drive loss; different footprint requires PCB redesign	Only suitable when thermal budget allows higher R_thJA (70 K/W vs. 58 K/W) and layout flexibility exists

Compared with IRFH7107TRPBF and STL220N8F7AG, BSB044N08NN3GXUMA1 offers the lowest combined R_DS(on)/Q_g FOM and best thermal resistance for dual-sided cooling, making it optimal for space-constrained, high-frequency DC/DC designs requiring minimal thermal derating.

Availability

BSB044N08NN3GXUMA1 is available at Aetrix Electronics and suitable for automotive DC/DC converters, server point-of-load regulators, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for BSB044N08NN3GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™3 Power-MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in automotive, computing, and telecom infrastructure applications.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 1 MHz?

A 1.6 Ω gate resistor is validated in the datasheet for 40 V V_DD, 30 A I_D switching tests. At 1 MHz, use ≤2.2 Ω to maintain <26 ns t_d(off) and avoid excessive Miller plateau dwell time. Higher values increase switching loss and risk of shoot-through in half-bridge configurations.

Does BSB044N08NN3GXUMA1 support solder reflow per JEDEC J-STD-020?

Yes - it is qualified per J-STD-020D for MS Level 3 moisture sensitivity, with peak reflow temperature of 260 °C for ≤30 seconds. The CanPAK™ M package uses Pb-free plating and passes thermal shock and intermetallic adhesion tests required for automotive production.

Can the top-side drain pad be left unconnected in single-sided cooling layouts?

No - the top-side drain pad is electrically and thermally integral to the device structure. Leaving it unconnected violates the thermal model and risks exceeding R_thJC limits. Even in single-sided layouts, it must be soldered to a copper pour or thermal via array per Infineon's layout guidelines.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

Not recommended - although Q_rr = 110 nC and t_rr = 55 ns are competitive, the body diode lacks soft-recovery characteristics. For LLC synchronous rectification, discrete Schottky or actively controlled MOSFETs with tailored gate timing are preferred to avoid reverse recovery oscillation.

BSB044N08NN3GXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 97µA

Gate Charge (Qg) (Max) @ Vgs:: 73 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5700 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSB044N08NN3GXUMA1 FAQ

1.How can I place an order for BSB044N08NN3GXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB044N08NN3GXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB044N08NN3GXUMA1 reliable?

The price and inventory of BSB044N08NN3GXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB044N08NN3GXUMA1 is usually 5 days.

3.What payment methods are accepted for BSB044N08NN3GXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB044N08NN3GXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB044N08NN3GXUMA1?

BSB044N08NN3GXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB044N08NN3GXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB044N08NN3GXUMA1?

For technical support, including BSB044N08NN3GXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB044N08NN3GXUMA1 requirements.

6.How does Aetrix verify that BSB044N08NN3GXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSB044N08NN3GXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB044N08NN3GXUMA1 meets industry standards.

7.What is the process for return or replacement of BSB044N08NN3GXUMA1?

All BSB044N08NN3GXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSB044N08NN3GXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB044N08NN3GXUMA1 part is unused and in its original packaging.

Return procedure for BSB044N08NN3GXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.