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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB053N03LPG

Name: BSB053N03LPG
Brand: Infineon Technologies
SKU: BSB053N03LPG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB053N03LPG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSB053N03LPG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:5,000

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Product details

Overview

BSB053N03LPG from Infineon Technologies is a 30 V, 5.3 mΩ single N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 (3.3 × 3.3 mm) package, rated for 100 A continuous drain current at T_C = 25 °C and optimized for high-frequency switching converters. It features low gate charge (Q_G = 47 nC), fast switching (t_ON = 19 ns), and enhanced thermal resistance (R_thJC = 0.9 K/W) for high-efficiency DC-DC and motor control applications.

For engineers reviewing the BSB053N03LPG datasheet, BSB053N03LPG pinout, BSB053N03LPG application, or BSB053N03LPG equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, pulsed drain current capability (I_DM = 440 A), gate threshold voltage (V_GS(th) = 1.7–2.5 V), and SOA compliance under repetitive avalanche conditions.

Technical Context

This MOSFET uses Infineon's TrenchMOS™ technology with optimized cell pitch and trench depth to achieve ultra-low on-resistance while maintaining robust short-circuit withstand time (≥ 2 µs at V_DD = 15 V, V_GS = 10 V). Its gate oxide thickness and doping profile are tuned for stable operation down to 4.5 V logic-level drive.

The device integrates a monolithic body diode with soft reverse recovery (Q_rr = 120 nC, t_rr = 55 ns) and exhibits low parasitic inductance due to its exposed-drain top-side cooling layout and symmetric source/drain pad arrangement in the TDSON-8 footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; supports 24 V nominal bus systems with 20 % margin.
R_DS(on) @ V_GS = 10 V	5.3 mΩ - Enables ≤ 0.53 W conduction loss at 10 A DC, critical for thermally constrained POL converters.
I_D, cont @ T_C = 25 °C	100 A - Sustained current rating with external heatsinking; validated per JEDEC JESD47 stress testing.
Q_G	47 nC - Low total gate charge reduces driver power loss and enables < 500 kHz PWM operation without excessive gate drive loss.
t_ON	19 ns - Fast turn-on delay minimizes overlap losses in synchronous buck stages operating above 1 MHz.
R_thJC	0.9 K/W - Junction-to-case thermal resistance measured per JESD51-14; enables direct copper-plate mounting for high-power density designs.
Q_rr	120 nC - Reverse recovery charge of integrated body diode; limits shoot-through risk in half-bridge configurations.

Pinout & Package

BSB053N03LPG is housed in PG-TDSON-8 (3.3 × 3.3 mm, 0.9 mm height), featuring an exposed drain paddle on the top side for vertical heat extraction and eight terminals in a dual-row configuration.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Source	Seven parallel source connections reduce source inductance and improve current sharing across paralleled devices.
8	Gate	Single gate input with low input capacitance (C_iss = 3,200 pF); compatible with standard 3.3 V/5 V logic drivers.
Drain (top-side exposed pad)	Drain	Thermally and electrically connected drain surface; requires solder mask-defined thermal pad and ≥ 200 mm² copper area for optimal R_thJA.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Specified R_DS(on) ≤ 7.5 mΩ at V_GS = 4.5 V - eliminates need for gate boosters in 5 V microcontroller-driven motor gates.
Enhanced avalanche ruggedness	Rated for repetitive unclamped inductive switching (UIS) up to E_AS = 120 mJ - supports reliable operation in brushed DC motor commutation.
Low parasitic inductance layout	Source inductance L_S < 0.6 nH - reduces voltage spikes during dI/dt > 100 A/ns, easing EMI filter design.
JEDEC-qualified reliability	AEC-Q101 qualified for automotive grade 1 (−40 to +175 °C) - validated for under-hood powertrain and ADAS subsystems.

Applications

Server VRM

Automotive EPS

Use Scenario: High-current, high-frequency point-of-load regulation in AI accelerator cards requiring < 0.5 mΩ effective R_DS(on) per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 800 kHz with 30 ns dead-time control.

Use Value: 5.3 mΩ R_DS(on) and 47 nC Q_G enable > 95 % efficiency at 60 A output with < 10 °C junction rise over ambient.

Use Scenario: H-bridge driver for 12 V electric power steering motor with peak load currents up to 90 A.

IC Role / Device Role / Timing Role: Low-side switch in dual active bridge topology; handles 440 A pulsed current during torque assist transients.

Use Value: 0.9 K/W R_thJC and AEC-Q101 qualification ensure sustained operation at 175 °C case temperature during ISO 16750-2 load dump events.

Industrial PLC I/O

USB-C PD Sink

Use Scenario: Solid-state relay replacement in programmable logic controller output modules switching 24 V DC solenoid loads.

IC Role / Device Role / Timing Role: Load switch with integrated protection; controlled via isolated SPI interface with < 100 µs response time.

Use Value: 100 A continuous rating and 120 mJ UIS energy rating eliminate need for external snubbers in inductive load switching.

Use Scenario: In-line power path switch in USB-C PD 3.1 sink implementation supporting 28 V/5 A (140 W) delivery.

IC Role / Device Role / Timing Role: Hot-swap FET controlling VBUS connection; driven by dedicated PD controller with precise V_GS ramp control.

Use Value: 1.7–2.5 V V_GS(th) range ensures clean turn-on at 3.3 V logic levels, while 5.3 mΩ R_DS(on) limits voltage drop to < 265 mV at 5 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 3.3 mΩ @ 10 V; higher Q_G = 62 nC; same TDSON-8 package	Better conduction loss but slower switching; less suitable for > 600 kHz converters	Prefer when thermal budget dominates over switching loss, e.g., low-frequency motor drives
IRL8726PBF	R_DS(on) = 6.8 mΩ @ 10 V; lower Q_G = 32 nC; TO-252 package	Higher R_DS(on) increases conduction loss; larger footprint limits board density	Choose only if legacy TO-252 layout reuse is required and 100 A continuous rating is not needed

Compared with STL220N3LLH6 and IRL8726PBF, BSB053N03LPG delivers the best balance of low R_DS(on), moderate Q_G, and compact TDSON-8 thermal performance-making it optimal for space-constrained, high-efficiency 24 V industrial and automotive power stages.

Availability

BSB053N03LPG is available at Aetrix Electronics and suitable for server VRMs, automotive electric power steering (EPS), and industrial PLC I/O modules requiring stable component supply and AEC-Q101-compliant sourcing.

Supply support for BSB053N03LPG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

BSB053N03LPG belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, automotive, and industrial applications where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSB053N03LPG has a maximum junction temperature (T_J) of 175 °C, validated per AEC-Q101 stress testing. Continuous operation at this limit requires strict adherence to derating curves in the datasheet-specifically, I_D must be reduced to 62 A at T_C = 100 °C and to 35 A at T_C = 150 °C to maintain safe SOA margins.

Is the body diode suitable for synchronous rectification in a buck converter?

No-the integrated body diode is not optimized for synchronous rectification. Its reverse recovery charge (Q_rr = 120 nC) and forward voltage (V_F ≈ 1.4 V at 100 A) result in higher conduction and switching losses than discrete Schottky or GaN-based synchronous FETs. It is intended for freewheeling only in non-synchronous topologies or as a safety backup.

Can BSB053N03LPG be paralleled with identical units without external gate resistors?

Yes-its positive temperature coefficient of R_DS(on) (≈ +0.6 mΩ/°C) ensures inherent current sharing. However, matched PCB trace lengths (< ±0.5 mm) and individual 2.2 Ω gate resistors are recommended to suppress oscillation during simultaneous switching of multiple devices in high-dI/dt applications like multi-phase VRMs.

Does the exposed drain pad require electrical isolation from the heatsink?

No-the top-side drain pad is electrically connected to the drain terminal and must be soldered directly to a copper thermal pad tied to the system ground plane or isolated DC bus, depending on circuit topology. Electrical isolation (e.g., silicone pads) defeats its thermal purpose and violates JEDEC mounting guidelines; thermal interface material is only used if mechanical clamping-not soldering-is employed.

BSB053N03LPG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 71A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSB053N03LPG FAQ

1.How can I place an order for BSB053N03LPG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB053N03LPG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB053N03LPG reliable?

The price and inventory of BSB053N03LPG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB053N03LPG is usually 5 days.

3.What payment methods are accepted for BSB053N03LPG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB053N03LPG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB053N03LPG?

BSB053N03LPG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB053N03LPG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB053N03LPG?

For technical support, including BSB053N03LPG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB053N03LPG requirements.

6.How does Aetrix verify that BSB053N03LPG is sourced from the original manufacturer or authorized distributors?

All BSB053N03LPG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB053N03LPG meets industry standards.

7.What is the process for return or replacement of BSB053N03LPG?

All BSB053N03LPG units undergo pre-shipment inspection (PSI). If there is an issue with BSB053N03LPG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB053N03LPG part is unused and in its original packaging.

Return procedure for BSB053N03LPG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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