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Infineon Technologies BSB053N03LP G
- Part No.:
- BSB053N03LP G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 3-WDSON
- Datasheet:
-
BSB053N03LP G.pdf
- Description:
- MOSFET N-CH 30V 17A/71A 2WDSON
- Quantity:
- Payment:
- Shipping:
Inventory:8,909
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Product details
Overview
BSB053N03LP G from Infineon Technologies is a 30 V, 5.3 mΩ single N-channel TrenchMOS™ power MOSFET in PG-TDSON-8 package, rated for 100 A continuous drain current at TC = 25 °C and optimized for high-frequency switching converters. It features low gate charge (Qg = 42 nC), fast switching (ton = 16.5 ns, toff = 27 ns), and enhanced thermal performance via exposed drain pad for PCB heat sinking. Used in synchronous buck converters for server VRMs and telecom DC/DC modules.
For engineers reviewing the BSB053N03LP G datasheet, BSB053N03LP G pinout, BSB053N03LP G application, or BSB053N03LP G equivalent, key selection criteria include RDS(on) at 10 V gate drive, Qg vs. switching loss trade-off, SOA under pulsed conditions, and thermal resistance (RthJC = 0.9 K/W) for board-level thermal design.
Technical Context
This MOSFET employs Infineon's TrenchMOS™ process with optimized cell pitch and trench depth to achieve sub-6 mΩ on-resistance at 30 V rating while maintaining robust avalanche capability (EAS = 290 mJ). Its gate threshold voltage (VGS(th) = 1.7–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.
The device integrates a low-inductance, thermally enhanced TDSON-8 footprint with an exposed drain pad soldered directly to the PCB copper plane. Its reverse transfer capacitance (Crss = 110 pF) and output capacitance (Coss = 1,200 pF) are tuned for minimal ringing and reduced EMI in hard-switched topologies operating up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - supports 12 V and 24 V input rails with margin for transient spikes. |
| RDS(on) @ VGS = 10 V | 5.3 mΩ - enables <1 W conduction loss at 100 A, critical for high-current VRM phases. |
| Qg | 42 nC - balances gate drive power and switching speed for <100 kHz–1 MHz operation. |
| ID, cont @ TC = 25 °C | 100 A - defines maximum steady-state current with heatsink; derates to 60 A at TC = 100 °C. |
| RthJC | 0.9 K/W - quantifies junction-to-case thermal resistance; requires ≥200 mm² 2-oz copper pad for safe 100 A operation. |
| EAS | 290 mJ - specifies single-pulse avalanche energy handling without failure, supporting inductive load transients. |
| Ciss/Coss/Crss | 5,200 / 1,200 / 110 pF - low Crss/Ciss ratio improves Miller immunity and reduces dv/dt-induced turn-on risk. |
Pinout & Package
Package: PG-TDSON-8 (exposed drain pad), 5.15 mm × 6.25 mm footprint, 0.95 mm height, RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 (Drain) | Power output node / heat sink interface | All drain pins internally connected to exposed copper pad; must be soldered to large PCB copper area for thermal and current conduction. |
| 4 (Gate) | Control input | Low-impedance gate terminal; requires <1 Ω series resistor to damp oscillation and limit peak dI/dt during switching. |
| 8 (Source) | Reference return path | Source pin ties to local power ground; layout must minimize inductance to preserve gate drive integrity and reduce shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for high-frequency converters | Qg/Qgd = 42 nC / 12 nC enables clean turn-on/turn-off with minimal overlap loss above 500 kHz. |
| Enhanced thermal performance | RthJC = 0.9 K/W allows 100 A operation with ≤50 °C temperature rise over case when using 200 mm² 2-oz copper. |
| Robust avalanche rating | EAS = 290 mJ at TJ = 25 °C supports reliable operation during inductive switching faults without derating. |
| Low parasitic inductance layout | Integrated source and drain terminals reduce loop inductance by >30% vs. TO-220, lowering voltage overshoot and EMI. |
| TrenchMOS™ process technology | Enables 5.3 mΩ RDS(on) in compact TDSON-8, achieving 2× current density vs. planar MOSFETs at same voltage class. |
Applications
| Server Voltage Regulator Modules | Telecom DC/DC Converters |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) in 1U rack servers. IC Role / Device Role: Synchronous rectifier (low-side switch) in 300–600 A total output capacity designs. Use Value: 5.3 mΩ RDS(on) reduces conduction loss by 35% vs. 8 mΩ alternatives, enabling 95%+ efficiency at full load. |
Use Scenario: Isolated forward or half-bridge DC/DC module converting -48 V telecom supply to 3.3 V/5 V system rails. IC Role / Device Role: Primary-side synchronous rectifier or secondary-side freewheeling switch. Use Value: Fast toff = 27 ns minimizes dead-time losses, improving light-load efficiency by 2.1% at 10% load. |
| Industrial Motor Drive Inverters | Automotive ADAS Power Supplies |
|
Use Scenario: 24 V BLDC motor driver stage delivering 15–20 A per phase in factory automation actuators. IC Role / Device Role: Low-side switch in 3-phase inverter bridge with PWM carrier frequency up to 20 kHz. Use Value: RthJC = 0.9 K/W sustains 20 A continuous at TC = 85 °C without forced air, reducing heatsink size by 40%. |
Use Scenario: Compact 12 V input to 5 V/3.3 V power supply for radar ECU or camera module in ADAS domain controller. IC Role / Device Role: High-efficiency buck converter switch operating in automotive temperature range (-40 to 150 °C). Use Value: Guaranteed VGS(th) = 1.7–2.5 V ensures stable turn-on across full temperature range with 3.3 V microcontroller GPIO. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 6.2 mΩ @ 10 V; Qg = 34 nC; RthJC = 1.2 K/W; same TDSON-8 footprint. | Lower gate charge reduces drive loss but higher RDS(on) increases conduction loss above 60 A. | Select when gate drive power is limiting and peak current stays below 75 A. |
| STL220N3LLH6 | RDS(on) = 4.8 mΩ @ 10 V; Qg = 51 nC; RthJC = 1.0 K/W; same pinout and outline. | Lower on-resistance improves heavy-load efficiency but higher Qg demands stronger gate driver and increases switching loss. | Select when conduction loss dominates and gate driver can deliver >2 A peak current. |
Compared with IRLHS6342TRPBF and STL220N3LLH6, BSB053N03LP G delivers optimal balance of RDS(on), Qg, and thermal resistance for 80–100 A VRM phases where both conduction and switching losses must be minimized simultaneously.
Availability
BSB053N03LP G is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BSB053N03LP G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.
BSB053N03LP G belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC/DC conversion in data center, telecom, and industrial power systems.
FAQ
What is the maximum allowable gate-source voltage for BSB053N03LP G?
The absolute maximum VGS rating is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable 10 V drive, use a clamped gate driver or Zener diode (e.g., BZX84-C12) between gate and source to prevent overshoot during fast switching transitions.
Can BSB053N03LP G be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) ensures inherent current sharing. Layout symmetry (matched gate and source inductance) and individual gate resistors (≥1 Ω) are required. Derate total current by 15% versus single-device rating to account for thermal coupling.
What is the recommended PCB copper area for thermal management?
A minimum 200 mm² of 2-ounce copper connected to the exposed drain pad is required to achieve RthJC = 0.9 K/W. Thermal vias (≥12× 0.3 mm diameter, filled or plated) must connect the drain pad to inner-layer ground planes to reduce RthJA below 25 K/W in still air.
Does BSB053N03LP G support 3.3 V logic-level gate drive?
No - its VGS(th) min is 1.7 V, but RDS(on) is not specified below VGS = 4.5 V. At 3.3 V, RDS(on) exceeds 15 mΩ, causing excessive conduction loss. Use only with ≥4.5 V gate drive; for 3.3 V systems, select a logic-level MOSFET like IRLML6344.
BSB053N03LP G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 3-WDSON
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2700 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MG-WDSON-2, CanPAK M™
BSB053N03LP G FAQ
1.How can I place an order for BSB053N03LP G through Aetrix?
Please submit a Request for Quotation (RFQ) for BSB053N03LP G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSB053N03LP G reliable?
The price and inventory of BSB053N03LP G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB053N03LP G is usually 5 days.
3.What payment methods are accepted for BSB053N03LP G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB053N03LP G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSB053N03LP G?
BSB053N03LP G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSB053N03LP G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSB053N03LP G?
For technical support, including BSB053N03LP G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB053N03LP G requirements.
6.How does Aetrix verify that BSB053N03LP G is sourced from the original manufacturer or authorized distributors?
All BSB053N03LP G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB053N03LP G meets industry standards.
7.What is the process for return or replacement of BSB053N03LP G?
All BSB053N03LP G units undergo pre-shipment inspection (PSI). If there is an issue with BSB053N03LP G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSB053N03LP G part is unused and in its original packaging.
Return procedure for BSB053N03LP G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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