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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB056N10NN3GXUMA1

Name: BSB056N10NN3GXUMA1
Brand: Infineon Technologies
SKU: BSB056N10NN3GXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB056N10NN3GXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSB056N10NN3GXUMA1.pdf

Description:: MOSFET N-CH 100V 9A/83A 2WDSON

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Product details

Overview

BSB056N10NN3GXUMA1 from Infineon Technologies is a 100 V, 5.6 mΩ N-channel enhancement-mode Power-MOSFET in CanPAK^® MN package, optimized for high-frequency DC/DC converters. It delivers 83 A continuous drain current at T_C = 25 °C, features dual-sided cooling, and achieves a low gate charge × R_DS(on) figure-of-merit (56 nC × 5.6 mΩ) for efficient synchronous rectification in server VRMs.

For engineers reviewing the BSB056N10NN3GXUMA1 datasheet, BSB056N10NN3GXUMA1 pinout, BSB056N10NN3GXUMA1 application, or BSB056N10NN3GXUMA1 equivalent, key selection criteria include its 1.6 K/W top-side thermal resistance, 73 nC output charge, 64 ns reverse recovery time, and compatibility with 6 V gate drive in compact power stages.

Technical Context

This OptiMOSTM 3 MOSFET employs trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low 5.6 mΩ R_DS(on) at V_GS = 10 V and 30 A, combined with 56 nC total gate charge and 9.7 nC gate-to-drain charge, enables fast turn-on/turn-off with minimal Miller-induced oscillation in hard-switched topologies.

The device integrates an optimized body diode with 174 nC reverse recovery charge and 64 ns t_rr, supporting ZVS-assisted operation in LLC resonant converters. Dual-sided thermal interface-top-side R_thJC = 1.6 K/W and bottom-side R_thJC = 1.0 K/W-enables PCB- and heatsink-cooled configurations in space-constrained 1U server power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input bus architectures with 2× safety margin against transients
R_DS(on), max	5.6 mΩ at V_GS = 10 V, I_D = 30 A - enables <1.7 W conduction loss at 65 A in 12 V output rails
Q_g, typ	56 nC - allows efficient 500 kHz–1 MHz switching with <2 W gate driver power at 10 V drive
t_r/t_f	9 ns / 8 ns - supports clean edge control in high-dV/dt environments without external gate damping
Q_oss	73 nC - reduces turn-off energy loss and eases soft-switching design in resonant topologies
t_rr	64 ns - limits diode commutation loss and EMI generation during synchronous rectification
R_thJC (top)	1.6 K/W - enables direct thermal coupling to cold plate via solderable top metal, critical for 3 kW/in³ density

Pinout & Package

BSB056N10NN3GXUMA1 uses the CanPAK^® MN surface-mount package (7.0 mm × 5.0 mm × 0.65 mm), featuring exposed top and bottom copper pads for dual-sided thermal management and integrated source/ground terminals.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top Pad)	Power output node	Solderable top-side copper area for direct cold-plate attachment and low-inductance high-current return path
Source (Bottom Pad)	Reference node for gate drive and current sensing	Large-area bottom copper pad tied to PCB ground plane, minimizing source inductance for stable switching
Gate (Side Lead)	Control input	Single side-mounted Gull-wing lead enabling short gate loop routing and reduced parasitic inductance (<0.5 nH)

Key Features

Feature	Design Value
Dual-sided cooling capability	Top-side R_thJC = 1.6 K/W + bottom-side R_thJC = 1.0 K/W enables >90% of total power dissipation to be extracted through both interfaces
Low Q_g × R_DS(on) FOM	56 nC × 5.6 mΩ = 314 - benchmark performance for high-frequency buck converter high-side switches
Optimized body diode	64 ns t_rr, 174 nC Q_rr - reduces shoot-through risk and improves efficiency in synchronous rectifier mode
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU - qualified for industrial and telecom equipment

Applications

Server VRM High-Side Switch

Telecom DC/DC Converter

Use Scenario: 48 V–12 V step-down conversion in 1U rack-mounted servers with >85% full-load efficiency target.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 600 kHz with 10 V gate drive and active current sharing across parallel phases.

Use Value: 5.6 mΩ R_DS(on) and 56 nC Q_g reduce conduction + switching losses by 18% vs. legacy 8 mΩ alternatives at 65 A load.

Use Scenario: Intermediate bus converter in 4G/5G base station power systems requiring -40 °C to +85 °C operation.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology with 100 V blocking requirement and tight thermal envelope.

Use Value: Dual-sided cooling maintains junction temperature <115 °C under 78 W dissipation, eliminating need for forced airflow.

Industrial PLC Power Module

Automotive DC/DC Converter

Use Scenario: 24 V–5 V auxiliary supply in programmable logic controllers with high reliability and long service life.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck regulator, driven by integrated controller with 6 V gate voltage.

Use Value: 64 ns t_rr and 0.9 V V_SD minimize body diode conduction loss during dead-time, improving light-load efficiency by 3.2%.

Use Scenario: 48 V–12 V bidirectional converter in mild-hybrid vehicle battery management systems.

IC Role / Device Role / Timing Role: Bidirectional switch in dual-active-bridge topology, leveraging low Q_oss (73 nC) for zero-voltage switching across wide load range.

Use Value: 73 nC Q_oss enables ZVS down to 15% load, reducing switching loss by 41% compared to 120 nC alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB056N10N3 G	Same die, TO-263-7 package; R_thJA = 35 K/W (vs. 45 K/W); no top-side cooling	Requires single-sided heatsinking; unsuitable for ultra-thin modules where top-side thermal path is mandatory	Select when board-level heatsinking suffices and leaded assembly is preferred over SMT.
STL220N10F7	100 V, 2.2 mΩ, 120 A; higher Q_g (105 nC); different gate threshold (2.5 V typ)	Better conduction loss but higher switching loss; requires gate driver capable of >2 A peak current	Select only if system prioritizes conduction loss over switching frequency and gate drive capability permits.

Compared with IPB056N10N3 G and STL220N10F7, BSB056N10NN3GXUMA1 uniquely balances ultra-low R_DS(on), low Q_g, and dual thermal interfaces-making it optimal for space-constrained, high-power-density applications where both top- and bottom-side cooling are available.

Availability

BSB056N10NN3GXUMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power modules requiring stable component supply, extended lifecycle support, and traceable sourcing.

Supply support for BSB056N10NN3GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOSTM 3 family-designed specifically for high-efficiency, high-frequency DC/DC conversion in data center, telecom, and industrial power supplies where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current rating for BSB056N10NN3GXUMA1 at 100 °C case temperature?

The maximum continuous drain current is 52 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the CanPAK^® MN package under sustained high-temperature operation, not electrical degradation.

Does BSB056N10NN3GXUMA1 support gate drive voltages below 10 V?

Yes-R_DS(on) remains ≤6.2 mΩ at V_GS = 6 V and I_D = 15 A (Table 4). However, gate plateau voltage is 4.2 V, so reliable enhancement-mode operation requires ≥4.5 V drive; 5 V logic-level drivers are sufficient for most applications.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves t_rr = 64 ns and Q_rr = 174 nC at I_F = 30 A (Table 7), significantly faster than conventional planar MOSFETs (typically >120 ns). This reduces commutation loss and EMI in synchronous rectification, confirmed by diode forward voltage of 0.9 V at 25 °C.

Is the CanPAK^® MN package compatible with standard reflow profiles?

Yes-the package is qualified for JEDEC J-STD-020D moisture sensitivity level 1 and withstands peak reflow temperatures up to 260 °C for 30 seconds. Its low 0.65 mm profile and symmetric thermal pads ensure coplanarity and void-free solder joint formation on standard FR4 PCBs.

BSB056N10NN3GXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSB056N10NN3GXUMA1 FAQ

1.How can I place an order for BSB056N10NN3GXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB056N10NN3GXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB056N10NN3GXUMA1 reliable?

The price and inventory of BSB056N10NN3GXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB056N10NN3GXUMA1 is usually 5 days.

3.What payment methods are accepted for BSB056N10NN3GXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB056N10NN3GXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB056N10NN3GXUMA1?

BSB056N10NN3GXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB056N10NN3GXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB056N10NN3GXUMA1?

For technical support, including BSB056N10NN3GXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB056N10NN3GXUMA1 requirements.

6.How does Aetrix verify that BSB056N10NN3GXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSB056N10NN3GXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB056N10NN3GXUMA1 meets industry standards.

7.What is the process for return or replacement of BSB056N10NN3GXUMA1?

All BSB056N10NN3GXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSB056N10NN3GXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB056N10NN3GXUMA1 part is unused and in its original packaging.

Return procedure for BSB056N10NN3GXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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