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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB104N08NP3GXUSA1

Name: BSB104N08NP3GXUSA1
Brand: Infineon Technologies
SKU: BSB104N08NP3GXUSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB104N08NP3GXUSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSB104N08NP3GXUSA1.pdf

Description:: MOSFET N-CH 80V 13A/50A 2WDSON

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Product details

Overview

BSB104N08NP3GXUSA1 from Infineon Technologies is an N-channel 80 V OptiMOS™3 Power-MOSFET in MG-WDSON-2 package, optimized for high-efficiency DC/DC converters. It delivers R_DS(on) = 9.3 mΩ (typ), 50 A continuous drain current at T_C = 25 °C, and low gate charge (Q_g = 23–31 nC), enabling fast switching with minimal conduction and switching losses in synchronous buck stages.

For engineers reviewing the BSB104N08NP3GXUSA1 datasheet, BSB104N08NP3GXUSA1 pinout, BSB104N08NP3GXUSA1 application, or BSB104N08NP3GXUSA1 equivalent, key selection criteria include its dual-sided cooling capability, 1.0 K/W junction-to-case thermal resistance (bottom side), and 10.4 mΩ max R_DS(on) at V_GS = 10 V - critical for high-density power supply designs requiring <0.7 mm profile and low parasitic inductance.

Technical Context

This MOSFET employs trench-based silicon technology with optimized cell pitch and reduced gate-drain charge (Q_gd = 5–8 nC) to achieve superior figure-of-merit (R_DS(on) × Q_g). Its low output capacitance (C_oss = 430–570 pF) and reverse recovery charge (Q_rr = 55 nC) support high-frequency operation up to 1 MHz in hard-switched topologies.

The device features a logic-level compatible gate threshold (V_GS(th) = 2.0–3.5 V) and robust avalanche rating (E_AS = 110 mJ), enabling reliable operation under transient overvoltage and inductive load switching without external snubbers in compact industrial and telecom power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage suitable for 48 V input bus systems with 20 % derating margin.
R_DS(on), max	10.4 mΩ at V_GS = 10 V, T_j = 25 °C - Enables ≤2.6 W conduction loss at 50 A, critical for thermally constrained PCB layouts.
I_D, cont	50 A at T_C = 25 °C - Supports high-current synchronous rectification in server VRMs and base station PSUs.
Q_g	23–31 nC - Low total gate charge reduces driver power demand and enables efficient 500 kHz–1 MHz PWM control.
R_thJC (bottom)	1.0 K/W - Enables direct thermal coupling to heatsink or copper plane, essential for dual-sided cooling architectures.
C_iss	1600–2100 pF - Predictable input capacitance simplifies gate drive loop stability analysis in high-dV/dt environments.
E_AS	110 mJ - Rated single-pulse avalanche energy supports unclamped inductive switching in motor gate drivers and DC link protection.

Pinout & Package

BSB104N08NP3GXUSA1 uses the MG-WDSON-2 (0308-2) package: ultra-low-profile (0.65 mm typical height), dual-side thermal and electrical interface, with exposed drain on bottom and source/gate on top side. The package supports solder-reflow assembly and is qualified for automotive-grade reliability per AEC-Q101.

Pin/Terminal	Circuit Role	Design Meaning
Drain (bottom side)	Main current path, high-side or low-side switch node	Exposed copper pad for thermal conduction and low-inductance power routing; connects directly to PCB ground or input rail.
Source (top side)	Reference terminal for gate drive and current sensing	Provides Kelvin connection point for accurate R_DS(on)-based current monitoring in closed-loop control.
Gate (top side)	Control input for channel modulation	Low-capacitance (<2 pF) gate terminal enables fast edge rates with minimal gate driver IC loading.

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_g)	~96 mΩ·nC - Reduces combined conduction + switching loss by ≥15 % vs. prior-gen 80 V MOSFETs in 500 kHz buck converters.
Dual-sided cooling	Thermal resistance split: R_thJC,bottom = 1.0 K/W, R_thJC,top = 3.0 K/W - Enables >70 % of heat extraction via PCB copper, reducing heatsink dependency.
Low-profile package	0.65 mm max height - Fits within 1.0 mm board stack-up constraints for ultra-thin telecom and networking equipment.
Low parasitic inductance	Typical L_DS < 0.5 nH - Minimizes voltage overshoot during turn-off, easing EMI filter design in high-dI/dt applications.

Applications

Server Voltage Regulator Module (VRM)

Telecom 48 V Intermediate Bus Converter

Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A peak.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 500–800 kHz with precise dead-time control.

Use Value: 10.4 mΩ R_DS(on) and 1.0 K/W R_thJC enable <1.5 °C/W thermal rise at 50 A, eliminating need for discrete heatsinks in dense VRM layouts.

Use Scenario: Isolated or non-isolated 48 V-to-12 V/5 V DC/DC module powering line cards and optical transceivers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or synchronous flyback topology.

Use Value: 110 mJ E_AS and 80 V V_DS withstand 60 V surge transients per IEC 61000-4-5, ensuring field reliability without clamping diodes.

Industrial Motor Gate Driver

Automotive ADAS Power Supply

Use Scenario: Half-bridge driver stage controlling BLDC motor phase currents up to 40 A RMS in factory automation drives.

IC Role / Device Role / Timing Role: Low-side switch with integrated reverse diode (V_SD = 0.9–1.2 V) for freewheeling current recirculation.

Use Value: 55 nC Q_rr and 43 ns t_rr minimize diode switching loss and cross-conduction risk during PWM commutation.

Use Scenario: Compact 12 V input, 3.3 V/5 V dual-output power supply for radar sensors and camera ECUs in ADAS domain controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback, operating with tight layout constraints.

Use Value: 0.65 mm profile and AEC-Q101 qualification ensure compliance with automotive mechanical and thermal stress requirements (–40 to 150 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB100N08N3 G	R_DS(on) = 11.5 mΩ (max), Q_g = 34 nC, same MG-WDSON-2 package	Slightly higher conduction loss and slower switching; better suited for lower-frequency (≤300 kHz), cost-sensitive designs	Select when thermal budget allows 10–15 % higher R_DS(on) and gate drive capability is limited.
STL220N8F7AG	R_DS(on) = 9.0 mΩ (typ), Q_g = 39 nC, TSDSON-8 package (0.9 mm height)	Lower R_DS(on) but taller profile and higher Q_g; no dual-sided cooling capability	Prefer only if board height >1.0 mm is acceptable and lowest possible conduction loss is prioritized over switching efficiency.

Compared with IPB100N08N3 G and STL220N8F7AG, BSB104N08NP3GXUSA1 uniquely balances ultra-low profile (0.65 mm), dual-sided thermal extraction (1.0 K/W), and industry-leading FOM - making it optimal for space-constrained, high-frequency, high-reliability power stages where both thermal and EMI performance are co-optimized.

Availability

BSB104N08NP3GXUSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor gate drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-qualified performance.

Supply support for BSB104N08NP3GXUSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 family - engineered specifically for high-efficiency, high-power-density DC/DC conversion in data center, telecom, and industrial power supplies where thermal performance and switching speed are system-critical.

FAQ

What is the maximum recommended gate voltage for BSB104N08NP3GXUSA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for operation at V_GS = 10 V. Driving above 12 V provides negligible R_DS(on) improvement while increasing gate oxide stress and ESD risk; 10 V is the standard recommendation for reliability and consistent performance across temperature.

Can BSB104N08NP3GXUSA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increasing ~0.5 %/°C) ensures inherent current sharing stability. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and Kelvin source connections to avoid oscillation; up to four devices have been validated in 200 A VRM phases with <5 % current imbalance at full load.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (R_G) is mandatory to control dV/dt and prevent ringing. For 500 kHz operation with a 2 A gate driver, a 1.6 Ω external resistor is specified in the datasheet for turn-on/turn-off timing validation. Values between 1.0 Ω and 3.3 Ω are typical; lower values increase switching speed but risk overshoot and EMI, especially with long gate traces.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 30 A continuous forward current (I_S) at T_C = 25 °C and exhibits low V_SD (0.9–1.2 V) and fast t_rr (43 ns). However, for >10 A average freewheeling current, PCB copper area must be sized to maintain T_j < 125 °C, as diode conduction loss contributes significantly to total thermal load.

BSB104N08NP3GXUSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSB104N08NP3GXUSA1 FAQ

1.How can I place an order for BSB104N08NP3GXUSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB104N08NP3GXUSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB104N08NP3GXUSA1 reliable?

The price and inventory of BSB104N08NP3GXUSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB104N08NP3GXUSA1 is usually 5 days.

3.What payment methods are accepted for BSB104N08NP3GXUSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB104N08NP3GXUSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB104N08NP3GXUSA1?

BSB104N08NP3GXUSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB104N08NP3GXUSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB104N08NP3GXUSA1?

For technical support, including BSB104N08NP3GXUSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB104N08NP3GXUSA1 requirements.

6.How does Aetrix verify that BSB104N08NP3GXUSA1 is sourced from the original manufacturer or authorized distributors?

All BSB104N08NP3GXUSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB104N08NP3GXUSA1 meets industry standards.

7.What is the process for return or replacement of BSB104N08NP3GXUSA1?

All BSB104N08NP3GXUSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSB104N08NP3GXUSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB104N08NP3GXUSA1 part is unused and in its original packaging.

Return procedure for BSB104N08NP3GXUSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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