Infineon Technologies BSB165N15NZ3GXUMA1

Overview

BSB165N15NZ3GXUMA1 from Infineon Technologies is an n-channel 150 V Power MOSFET in MG-WDSON-2 package, optimized for high-frequency synchronous rectification and primary-side switching in DC/DC converters. It delivers R_DS(on) = 13.1 mΩ (typ), Q_g = 26 nC (typ), Q_oss = 68 nC, and supports I_D = 45 A at T_C = 25 °C - enabling high power density in solar inverters and telecom voltage regulators.

For engineers reviewing the BSB165N15NZ3GXUMA1 datasheet, BSB165N15NZ3GXUMA1 pinout, BSB165N15NZ3GXUMA1 application, or BSB165N15NZ3GXUMA1 equivalent, key selection criteria include gate charge × R_DS(on) figure-of-merit (FOM), low-profile double-sided cooling capability, and compatibility with DirectFET® MZ footprint for thermal and layout optimization.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve ultra-low output charge (Q_oss = 68 nC) and gate charge (Q_g = 26 nC), minimizing switching losses in hard-switched topologies. Its 150 V V_DS rating and 13.1 mΩ R_DS(on) (V_GS = 10 V, I_D = 30 A) support robust operation in 48 V–100 V bus systems.

The MG-WDSON-2 package features bottom- and top-side thermal pads, enabling dual-surface heat dissipation with R_thJC = 1.6 K/W (bottom), and exhibits low parasitic inductance critical for EMI-sensitive high-dV/dt applications like synchronous buck converters.

Key Specifications

Pinout & Package

BSB165N15NZ3GXUMA1 is housed in Infineon's MG-WDSON-2 package - a low-profile (<0.7 mm), double-sided cooling, leadless surface-mount package with exposed top and bottom thermal pads. It shares mechanical footprint and outline compatibility with DirectFET® MZ, enabling drop-in layout reuse.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency 150 V power MOSFET applications.

Compared with IPB165N15N3 G and STP165N15F7, BSB165N15NZ3GXUMA1 delivers superior high-frequency efficiency via lower Q_g and Q_oss, while its MG-WDSON-2 package enables 40 % smaller footprint and dual-surface thermal management - critical for next-gen compact power systems.

Availability

BSB165N15NZ3GXUMA1 is available at Aetrix Electronics and suitable for solar microinverters, telecom voltage regulators, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BSB165N15NZ3GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 150 V product line - engineered specifically for high-efficiency, high-power-density DC/DC conversion in solar, telecom, datacom, and industrial drive systems where low R_DS(on), low Q_g, and advanced thermal packaging are mandatory.

FAQ

What is the maximum continuous drain current for BSB165N15NZ3GXUMA1 at 100 °C case temperature?

The maximum continuous drain current is 29 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the 2011 datasheet. This derating reflects thermal limits under sustained high-temperature operation and must be validated with actual PCB copper area and airflow conditions.

Does BSB165N15NZ3GXUMA1 support gate drive voltages below 10 V?

Yes - it has a gate threshold voltage range of 2–4 V and specifies R_DS(on) = 14–17.9 mΩ at V_GS = 8 V and I_D = 15 A. However, full-rated 45 A performance requires V_GS ≥ 10 V to ensure minimal on-resistance and thermal stability.

Is the MG-WDSON-2 package compatible with standard reflow profiles?

Yes - the package is qualified for standard lead-free (SnAgCu) reflow per JEDEC J-STD-020, with peak temperature ≤ 260 °C. Its low profile and symmetric thermal mass enable uniform heating and minimize warpage risk during assembly.

What is the reverse recovery charge (Q_rr) of the body diode?

The body diode Q_rr is 337 nC under test conditions of V_R = 75 V, I_F = 30 A, and di_F/dt = 100 A/µs, as measured in Table 7. This value impacts commutation loss in synchronous rectification and must be considered in dead-time optimization.