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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC007N04LS6ATMA1

Name: BSC007N04LS6ATMA1
Brand: Infineon Technologies
SKU: BSC007N04LS6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC007N04LS6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC007N04LS6ATMA1.pdf

Description:: MOSFET N-CH 40V 100A TDSON-8-6

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Product details

Overview

BSC007N04LS6ATMA1 from Infineon Technologies is an N-channel 40 V OptiMOSTM 6 power MOSFET in PG-TDSON-8 package, optimized for synchronous rectification in high-current DC/DC converters. It delivers 0.7 mΩ max R_DS(on) at V_GS = 10 V, supports 381 A continuous drain current at T_C = 25 °C, and features 100% avalanche tested ruggedness for automotive and industrial power stages.

For engineers reviewing the BSC007N04LS6ATMA1 datasheet, BSC007N04LS6ATMA1 pinout, BSC007N04LS6ATMA1 application, or BSC007N04LS6ATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, Q_G(0–4.5 V) = 45 nC for fast switching in high-frequency synchronous FETs, and thermal resistance R_thJC = 0.8 °C/W for bottom-side cooling in compact power modules.

Technical Context

This MOSFET employs Infineon's OptiMOSTM 6 trench-gate process to achieve ultra-low on-resistance while maintaining robust switching performance. Its 0.7 mΩ R_DS(on) and 94 nC total gate charge (0–10 V) enable high-efficiency operation in 48 V input server VRMs and 12 V/48 V hybrid automotive DC/DC converters.

The device integrates a fast-recovery body diode with t_rr = 36–72 ns and Q_rr = 133–266 nC, supporting zero-voltage switching (ZVS) topologies. Its 175 °C rated junction temperature and JEDEC-qualified industrial reliability make it suitable for thermally constrained, high-power-density applications requiring sustained 200+ A output currents.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 36 V nominal bus systems and 48 V automotive architectures.
R_DS(on), max	0.7 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 150 A, critical for >95% efficiency in high-current buck converters.
I_D, cont	381 A at T_C = 25 °C - Supports single-device implementation in 3 kW+ power stages without paralleling.
Q_G(0–4.5 V)	45 nC - Optimized gate drive energy for 300–1000 kHz synchronous FET operation with minimal driver loss.
R_thJC	0.8 °C/W (bottom side) - Allows direct thermal interface to heatsink or PCB copper, enabling <10 °C junction rise at 200 W dissipation.
E_AS	674 mJ - Confirmed single-pulse avalanche capability supports robustness against inductive switching transients in motor drives.
V_GS(th)	1.3–2.3 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers in digital power ICs.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint), RoHS-compliant, halogen-free, with bottom-side thermal pad for enhanced heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1–3, Source	Source connection (low-side reference)	Three parallel pins reduce source inductance and improve current sharing in high-di/dt switching.
4, Gate	Gate control terminal	Single-pin gate input minimizes loop inductance; requires <1.6 Ω external gate resistor for optimal 8 ns t_d(on).
5–8, Drain	Drain connection (power output node)	Four parallel pins + exposed bottom pad provide ultra-low impedance path for 381 A continuous current and efficient thermal conduction.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_G(0–4.5 V) = 45 nC and fast t_r/t_f (6 ns/13 ns) minimize dead-time losses in high-frequency buck converters.
100% avalanche tested	Guaranteed E_AS = 674 mJ ensures field reliability in uncontrolled inductive load switching without external snubbers.
Superior thermal resistance	R_thJC = 0.8 °C/W (bottom) enables >200 W power handling with simple heatsink attachment-no thermal vias required.
N-channel enhancement mode	V_GS(th) = 1.3–2.3 V allows direct drive from microcontroller GPIO or dedicated gate drivers without level-shifting.
175 °C rated junction	Supports operation in under-hood automotive environments and sealed industrial enclosures without derating below 150 °C ambient.

Applications

Server VRM Power Stage

Automotive 48 V DC/DC Converter

Use Scenario: High-current, high-efficiency buck converter supplying core voltage to AI accelerators in data center servers.

IC Role / Device Role / Timing Role: Synchronous FET in 300–600 kHz multiphase buck stage, operating with 4.5 V gate drive from digital controller.

Use Value: 0.7 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 1.2 mΩ devices, enabling >96% peak efficiency at 200 A output.

Use Scenario: Bidirectional 48 V/12 V DC/DC converter in mild-hybrid electric vehicles (MHEV) for regenerative braking energy recovery.

IC Role / Device Role / Timing Role: Low-side synchronous switch in dual-active-bridge topology, switching at 200–400 kHz with ZVS.

Use Value: Fast body diode (t_rr = 36 ns) and low Q_gd = 11.2 nC support soft-switching, reducing EMI and improving system-level efficiency by 2.1%.

Industrial Motor Drive Inverter

High-Power USB PD 3.1 EPR GaN Companion

Use Scenario: 3 kW servo drive inverter stage powering PMSM motors in CNC machinery with forced-air cooling.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET half-bridge, conducting up to 319 A at T_C = 100 °C.

Use Value: JEDEC-qualified industrial reliability and 175 °C rating ensure uninterrupted operation during extended thermal stress cycles.

Use Scenario: Synchronous rectifier in 28 V/5 A USB PD 3.1 Extended Power Range (EPR) adapter using GaN HEMT primary-side switching.

IC Role / Device Role / Timing Role: Secondary-side FET operating at 500 kHz with 3.3 V logic-level gate drive from isolated controller.

Use Value: V_GS(th) = 1.3–2.3 V and Q_G(0–4.5 V) = 45 nC allow full enhancement and fast switching without bootstrap complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL40B215TRPBF	R_DS(on) = 0.95 mΩ (max), Q_G(0–4.5 V) = 52 nC, R_thJC = 1.1 °C/W	Higher conduction and switching loss; less suitable for >400 kHz operation	Preferred where cost sensitivity outweighs 5–7% efficiency penalty in lower-frequency industrial SMPS.
STL220N4F7AG	R_DS(on) = 0.65 mΩ (typ), Q_G(0–4.5 V) = 48 nC, R_thJC = 0.95 °C/W, 150 °C rated	Slightly lower R_DS(on) but reduced thermal margin and junction temperature rating	Valid for space-constrained consumer power supplies where 150 °C max junction suffices and JEDEC qualification is not mandatory.

Compared with IRL40B215TRPBF and STL220N4F7AG, BSC007N04LS6ATMA1 offers the lowest thermal resistance (0.8 °C/W), highest junction temperature rating (175 °C), and tightest R_DS(on) specification-making it the preferred choice for mission-critical, high-power-density automotive and server applications demanding long-term reliability under thermal stress.

Availability

BSC007N04LS6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive 48 V DC/DC converters, and industrial motor drive inverters requiring stable component supply across multi-year production programs.

Supply support for BSC007N04LS6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSC007N04LS6ATMA1 belongs to the OptiMOSTM 6 family-designed specifically for high-current, high-frequency synchronous rectification in next-generation power conversion systems where ultra-low R_DS(on) and robust thermal performance are non-negotiable.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The BSC007N04LS6ATMA1 supports 269 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the Rev. 2.3 datasheet. This value accounts for thermal de-rating and assumes proper PCB copper area (6 cm²) and vertical mounting in still air.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. The datasheet recommends R_G,ext = 1.6 Ω for characterization (e.g., t_d(on) = 8 ns). Actual value depends on driver strength and layout; typical range is 1–5 Ω for 300–600 kHz operation with 3.3 V or 5 V gate drivers.

Can the body diode be used for reverse current conduction in bidirectional topologies?

Yes-the integrated body diode is characterized with t_rr = 36–72 ns and Q_rr = 133–266 nC at T_j = 25 °C. It supports controlled reverse conduction in dual-active-bridge and LLC resonant converters, but forward voltage (V_SD = 0.78–1.0 V) must be included in loss calculations.

Is the PG-TDSON-8 package compatible with standard reflow profiles?

Yes-the PG-TDSON-8 package is qualified for lead-free reflow per J-STD-020D, with peak temperature ≤ 260 °C and time above liquidus ≤ 60 seconds. The exposed drain pad requires full-solder coverage to achieve specified R_thJC; stencil design should use 80–90% area ratio for optimal thermal joint formation.

BSC007N04LS6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 381A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 94 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8400 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 188W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-6

BSC007N04LS6ATMA1 FAQ

1.How can I place an order for BSC007N04LS6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC007N04LS6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC007N04LS6ATMA1 reliable?

The price and inventory of BSC007N04LS6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC007N04LS6ATMA1 is usually 5 days.

3.What payment methods are accepted for BSC007N04LS6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC007N04LS6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC007N04LS6ATMA1?

BSC007N04LS6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC007N04LS6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC007N04LS6ATMA1?

For technical support, including BSC007N04LS6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC007N04LS6ATMA1 requirements.

6.How does Aetrix verify that BSC007N04LS6ATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC007N04LS6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC007N04LS6ATMA1 meets industry standards.

7.What is the process for return or replacement of BSC007N04LS6ATMA1?

All BSC007N04LS6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC007N04LS6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC007N04LS6ATMA1 part is unused and in its original packaging.

Return procedure for BSC007N04LS6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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