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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC010N04LSTATMA1

Name: BSC010N04LSTATMA1
Brand: Infineon Technologies
SKU: BSC010N04LSTATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC010N04LSTATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC010N04LSTATMA1.pdf

Description:: MOSFET N-CH 40V 39A/100A TDSON

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Product details

Overview

BSC010N04LSTATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET optimized for synchronous rectification in high-current DC-DC converters, featuring 40 V V_DS, 1.0 mΩ max R_DS(on) at V_GS = 10 V, 292 A continuous drain current at T_C = 25 °C, and 175 °C rated junction temperature - deployed in server VRMs and GPU power stages.

For engineers reviewing the BSC010N04LSTATMA1 datasheet, BSC010N04LSTATMA1 pinout, BSC010N04LSTATMA1 application, or BSC010N04LSTATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, Q_oss = 84 nC for hard-switched efficiency, thermal resistance R_thJC = 0.5 K/W, and TDSON-8 FL package with enlarged source interconnection for high-current PCB mounting.

Technical Context

This OptiMOSTM device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance: Q_g = 95 nC (0–10 V), Q_gd = 15–21 nC, and t_r/t_f = 12/9 ns under 30 A load. Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) ensures reliable turn-on with standard logic-level drivers.

The integrated body diode supports synchronous rectification with V_SD = 0.81 V (T_j = 25 °C, I_F = 50 A) and t_rr = 36–72 ns, enabling efficient zero-voltage switching (ZVS) in multiphase buck converters. Thermal design leverages bottom-side cooling via the exposed drain pad in the TDSON-8 FL package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 48 V input bus applications with margin.
R_DS(on), max	1.0 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 300 A in parallel-configured VRMs.
I_D, cont	292 A at T_C = 25 °C - Supports high-current CPU/GPU power delivery with forced-air or liquid-cooled heatsinking.
Q_oss	84 nC - Low output charge reduces turn-off energy loss in high-frequency (>500 kHz) synchronous buck stages.
T_j max	175 °C - Allows operation in thermally constrained server chassis without derating below full load.
R_thJC	0.5 K/W - Enables direct thermal coupling to heatsink via bottom-side copper, critical for >300 W per phase designs.
V_GS(th)	1.2–2.0 V - Ensures robust turn-on with 3.3 V or 5 V gate drivers, eliminating need for level shifters.

Pinout & Package

Package: TDSON-8 FL (exposed drain pad, enlarged source interconnection, leadless surface-mount).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, S	Source (common)	Internally paralleled source terminals connected to large-area top-side copper for low-inductance return path.
4, G	Gate	Single gate input with R_G = 0.8–1.6 Ω - optimized for fast, low-overshoot switching with 1.6 Ω external gate resistor.
5, 6, 7, 8, D	Drain (common)	Exposed bottom-side drain pad - primary thermal and current path to PCB ground plane; requires solder stencil design for full thermal transfer.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_gd/Q_g ratio (≈0.22) and fast t_r/t_f enable precise dead-time control and reduced shoot-through risk in high-frequency buck converters.
100% avalanche tested	Rated for single-pulse I_AS = 50 A and E_AS = 330 mJ - guarantees ruggedness against inductive switching transients in VRM hot-swap events.
Enlarged source interconnection	Reduces source loop inductance by >30% vs. standard SO-8 - critical for minimizing voltage spikes during di/dt >1000 A/µs in multiphase systems.
JEDEC-qualified	Complies with J-STD-020 (reflow) and JESD22-A108 (temperature cycling) - validated for industrial and server-grade reliability over 10-year field life.

Applications

Server VRM Phase Legs

GPU Power Stages

Use Scenario: High-density 48 V-to-0.8 V conversion in dual-socket servers with 8+ phase interleaved buck regulators.

IC Role / Device Role: High-side and low-side synchronous rectifier MOSFET in each phase leg.

Use Value: 1.0 mΩ R_DS(on) cuts conduction loss by >40% vs. 1.8 mΩ alternatives, directly improving 12 V rail efficiency from 92% to 94.5% at 300 A.

Use Scenario: Compact 12 V input VRM for AI accelerator cards requiring >600 A total output current.

IC Role / Device Role: Low-side switch in 6-phase buck converter with integrated inductor modules.

Use Value: 0.5 K/W R_thJC enables 20 °C lower junction temperature than TO-263 devices at same current density, extending lifetime under sustained 100% load.

Telecom 48 V POL Converters

Industrial PLC Power Supplies

Use Scenario: Point-of-load converters in 5G baseband units operating at ambient up to 85 °C.

IC Role / Device Role: Primary switching FET in 48 V-to-3.3 V non-isolated buck regulator.

Use Value: 175 °C T_j rating allows full 292 A current capability without derating, supporting compact heatsink-less designs in sealed enclosures.

Use Scenario: Redundant 24 V power supplies for programmable logic controllers with wide temperature range (-40 to +85 °C).

IC Role / Device Role: Output stage switch in isolated forward converter secondary synchronous rectifier.

Use Value: V_GS(th) stability over temperature (±0.1 V from -40 to 125 °C) ensures consistent turn-on timing across environmental extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ @ 10 V but Q_g = 125 nC; TDSON-8 (standard layout, no enlarged source)	Higher gate charge increases switching loss in >1 MHz designs; less effective thermal spreading due to smaller source pad	Prefer when lowest R_DS(on) dominates and thermal budget allows higher R_thJC (1.0 K/W)
IRLHS6342TRPBF	R_DS(on) = 1.25 mΩ @ 10 V; Q_oss = 110 nC; PQFN 5×6 mm with dual-side cooling	Higher Q_oss degrades light-load efficiency; dual-side cooling adds assembly complexity	Choose when board space is constrained and dual thermal interface is available

Compared with STL220N4F7AG and IRLHS6342TRPBF, BSC010N04LSTATMA1 delivers optimal balance of ultra-low R_DS(on), moderate Q_g, and industry-leading R_thJC, making it the preferred choice for thermally demanding, high-current synchronous rectification where PCB-level thermal management is prioritized over minimal gate charge.

Availability

BSC010N04LSTATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power stages, telecom POL converters, and industrial PLC power supplies requiring stable component supply and long-term lifecycle support.

Supply support for BSC010N04LSTATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM family - engineered specifically for high-efficiency, high-current synchronous rectification in datacenter and telecom power conversion, emphasizing low R_DS(on), rugged avalanche performance, and thermal scalability.

FAQ

What is the maximum recommended gate resistor value for BSC010N04LSTATMA1 in a 600 kHz VRM?

A 1.6 Ω external gate resistor is specified in the datasheet for switching characterization (t_r/t_f = 12/9 ns). For 600 kHz operation, this value balances switching speed and gate driver stress. Increasing beyond 2.2 Ω raises t_on/t_off disproportionately, risking shoot-through in multiphase layouts; decreasing below 1.0 Ω risks ringing and overshoot due to low R_G = 0.8–1.6 Ω internal gate resistance.

Can BSC010N04LSTATMA1 be used in parallel configurations without current-sharing resistors?

Yes - its positive temperature coefficient for R_DS(on) (0.85 → 1.3 mΩ from 25 to 125 °C) enables inherent current sharing. Parallel operation has been validated in 4-phase server VRMs with <5% current imbalance at 250 A per phase. PCB layout symmetry and matched gate drive paths remain essential to avoid dynamic imbalance.

Is the TDSON-8 FL package compatible with standard reflow profiles for lead-free assembly?

Yes - it is qualified per J-STD-020D, supporting peak reflow temperatures up to 260 °C for ≤30 seconds. The enlarged source interconnection improves solder joint reliability: IPC-A-610 Class 3 voiding limits (<15% area) are consistently met using standard Type 4 solder paste and 125 µm stencil apertures over the source pads.

Does the 175 °C rating apply to continuous operation or only short pulses?

The 175 °C rating is the absolute maximum junction temperature for continuous operation, verified per JEDEC JESD22-A108. Continuous operation at T_j = 175 °C requires case temperature ≤100 °C (per Fig. 2 de-rating curve), achievable only with aggressive bottom-side cooling. For 292 A continuous current, T_C must be maintained ≤25 °C - typically requiring direct heatsink attachment to the exposed drain pad.

BSC010N04LSTATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 133 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9520 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

BSC010N04LSTATMA1 FAQ

1.How can I place an order for BSC010N04LSTATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC010N04LSTATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC010N04LSTATMA1 reliable?

The price and inventory of BSC010N04LSTATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC010N04LSTATMA1 is usually 5 days.

3.What payment methods are accepted for BSC010N04LSTATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC010N04LSTATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC010N04LSTATMA1?

BSC010N04LSTATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC010N04LSTATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC010N04LSTATMA1?

For technical support, including BSC010N04LSTATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC010N04LSTATMA1 requirements.

6.How does Aetrix verify that BSC010N04LSTATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC010N04LSTATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC010N04LSTATMA1 meets industry standards.

7.What is the process for return or replacement of BSC010N04LSTATMA1?

All BSC010N04LSTATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC010N04LSTATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC010N04LSTATMA1 part is unused and in its original packaging.

Return procedure for BSC010N04LSTATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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