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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC014N03MSGATMA1

Name: BSC014N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC014N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC014N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC014N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 30A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC014N03MSGATMA1 from Infineon Technologies is an N-channel Power-MOSFET in PG-TDSON-8 package, optimized for 5 V gate drive in notebook CPU/GPU VRMs and point-of-load (POL) converters. It delivers R_DS(on) = 1.4 mΩ @ V_GS = 10 V and 1.75 mΩ @ V_GS = 4.5 V, supports 100 A continuous drain current at T_C = 25 °C, and is 100% avalanche tested for robustness in high-frequency synchronous buck stages.

For engineers reviewing the BSC014N03MSGATMA1 datasheet, BSC014N03MSGATMA1 pinout, BSC014N03MSGATMA1 application, or BSC014N03MSGATMA1 equivalent, key selection criteria include gate charge (Q_g = 130 nC @ 10 V), thermal resistance (R_thJC = 0.9 K/W), FOM_SW optimization, and JEDEC-qualified reliability for mobile and POL power delivery.

Technical Context

This OptiMOS™3 M-Series MOSFET employs a trench-gate superjunction structure to achieve ultra-low R_DS(on) and gate charge product (FOM). Its 30 V V_DS rating and 1.75 mΩ on-resistance at 4.5 V gate drive enable efficient operation in 5 V-controlled synchronous rectifiers and high-current DC-DC converters.

The device features low C_iss (10,000–13,000 pF), C_oss (2600–3500 pF), and Q_gd (13–22 nC), supporting fast switching with minimal losses. Its integrated body diode exhibits Q_rr ≤ 30 nC and V_SD ≤ 1.1 V at 30 A, enabling reliable synchronous FET operation in high-frequency SMPS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with margin for transients in POL and notebook VRMs.
R_DS(on) @ V_GS = 4.5 V	1.75 mΩ max - Enables <1.8 mΩ conduction loss at 30 A, critical for high-efficiency 5 V-driven synchronous FETs.
I_D continuous @ T_C = 25 °C	100 A - Sustains full load in high-current CPU/GPU power stages without derating at heatsink temperature.
Q_g @ V_GS = 0–10 V	130–173 nC - Low total gate charge reduces driver power loss and enables >1 MHz switching with standard gate drivers.
R_thJC	0.9 K/W - Enables direct thermal path to PCB copper or heatsink, limiting junction rise to <90 K at 100 W dissipation.
E_AS single pulse	340 mJ - Confirmed avalanche ruggedness allows safe operation under inductive turn-off stress in non-isolated converters.
Q_rr	≤30 nC - Minimizes reverse recovery loss and EMI in synchronous rectification, especially at high di/dt.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height), RoHS-compliant, halogen-free, Pb-free plating.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Low-side return path; electrically tied to exposed drain pad via internal substrate connection in typical layout.
4	Gate	Control terminal requiring <2.6 Ω gate resistor for optimal dV/dt control and ringing suppression.
8	Drain (exposed pad)	Main power path; must be soldered to ≥6 cm² copper area for thermal performance and current handling.

Key Features

Feature	Design Value
Optimized for 5 V gate drive	Guarantees R_DS(on) ≤ 1.75 mΩ at V_GS = 4.5 V, eliminating need for level-shifting in 5 V controller-based POL designs.
Low gate charge × R_DS(on) (FOM)	Q_g × R_DS(on) ≈ 227 nC·mΩ @ 10 V - minimizes combined conduction and switching loss in high-frequency SMPS.
100% single-pulse avalanche tested	Validated I_AS = 50 A and E_AS = 340 mJ - ensures reliability under transient overcurrent and inductive energy dump.
Superior thermal resistance (R_thJC)	0.9 K/W - enables >130 W power dissipation with <120 °C junction rise when mounted on 6 cm² copper, reducing heatsink dependency.

Applications

Notebook CPU Voltage Regulator

GPU Point-of-Load Converter

Use Scenario: High-current, space-constrained VRM supplying Intel/AMD mobile CPUs with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Synchronous high-side or low-side MOSFET in dual-phase buck converter operating at 300–1000 kHz.

Use Value: 1.75 mΩ R_DS(on) at 4.5 V drive eliminates external level shifters and maintains <1.5% voltage droop during 80 A load transients.

Use Scenario: Compact, high-efficiency power stage for discrete GPU memory and core rail regulation in ultrabooks and workstations.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck topology with 5 V PWM controller interface.

Use Value: Q_rr ≤ 30 nC and fast t_f = 16 ns reduce body-diode conduction loss and EMI generation during dead-time transitions.

Server DDR5 Memory Regulator

Industrial FPGA Core Supply

Use Scenario: 1.1 V/60 A core supply for DDR5 modules requiring tight regulation and high PSRR across 10 kHz–10 MHz.

IC Role / Device Role / Timing Role: Low-R_DS(on) power switch in compact 3-phase interleaved buck delivering <10 mV ripple at full load.

Use Value: R_thJC = 0.9 K/W and 100 A rating allow full output current without forced air, supporting fanless server module designs.

Use Scenario: Reliable 1.0 V core supply for Xilinx/Kintex Ultrascale+ FPGAs in industrial PLCs with extended temperature range requirements.

IC Role / Device Role / Timing Role: JEDEC-qualified power MOSFET in 500 kHz buck converter operating from -40 °C to +125 °C ambient.

Use Value: V_GS(th) stability (1–2 V) and R_DS(on) drift <20% over -55 to +150 °C ensure consistent efficiency across industrial thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 1.8 mΩ @ 4.5 V; Q_g = 14.5 nC lower; PG-TSDSON-8 package.	Lower gate charge improves light-load efficiency but higher R_DS(on) increases conduction loss above 40 A.	Prefer for <50 A POL where gate drive loss dominates; avoid for >80 A CPU VRMs due to thermal margin loss.
SIZ202DT-T1-GE3	R_DS(on) = 1.35 mΩ @ 4.5 V; Q_g = 155 nC; same PG-TDSON-8 footprint.	Lower R_DS(on) improves heavy-load efficiency but higher Q_g demands stronger gate driver capability.	Prefer for thermally constrained 100 A designs; verify driver slew rate supports 155 nC charge at target frequency.

Compared with IRLHS6342TRPBF and SIZ202DT-T1-GE3, BSC014N03MSGATMA1 offers the best balance of R_DS(on), Q_g, and avalanche ruggedness for 5 V-driven, high-current VRMs-enabling stable 100 A operation without gate drive compromise or thermal derating.

Availability

BSC014N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU VRMs, GPU point-of-load converters, and industrial FPGA core supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for BSC014N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™3 M-Series, engineered specifically for high-current, high-frequency DC-DC conversion in mobile computing and server power delivery-emphasizing low R_DS(on), fast switching, and thermal robustness in compact packages.

FAQ

What is the maximum recommended gate resistor value for BSC014N03MSGATMA1 in a 1 MHz synchronous buck converter?

A 1.6 Ω gate resistor is specified in the datasheet for 1 MHz switching with V_DD = 15 V and I_D = 30 A. Using >2.6 Ω risks exceeding the device's maximum R_G limit and may cause excessive switching time, increased losses, and potential shoot-through in half-bridge configurations.

Does BSC014N03MSGATMA1 support paralleling for higher current applications?

Yes-its positive temperature coefficient of R_DS(on) (confirmed by R_DS(on) vs. T_j curves) enables stable current sharing. Layout must ensure matched gate drive paths and symmetric thermal coupling; parallel operation beyond 200 A requires careful PCB copper balancing per device.

Is the PG-TDSON-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-the device is qualified for Pb-free plating and complies with J-STD-020 moisture sensitivity level 1. Standard IPC/JEDEC J-STD-020D reflow profile (peak 260 °C, 10 s max) is supported; no pre-bake required for dry-packed units.

Can BSC014N03MSGATMA1 be used as a high-side switch in a floating-gate configuration?

No-it is not rated for high-side bootstrap operation above 30 V. Its V_GS rating is ±20 V and V_BR(DSS) is only 30 V; using it as a high-side switch in >12 V input systems risks gate oxide failure or avalanche breakdown during boot capacitor recharge.

BSC014N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 173 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 139W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC014N03MSGATMA1 FAQ

1.How can I place an order for BSC014N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC014N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC014N03MSGATMA1 reliable?

The price and inventory of BSC014N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC014N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC014N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC014N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC014N03MSGATMA1?

BSC014N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC014N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC014N03MSGATMA1?

For technical support, including BSC014N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC014N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC014N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC014N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC014N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC014N03MSGATMA1?

All BSC014N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC014N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC014N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC014N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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