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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC016N03LSGATMA1

Name: BSC016N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC016N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC016N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC016N03LSGATMA1.pdf

Description:: MOSFET N-CH 30V 32A/100A TDSON

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Product details

Overview

BSC016N03LSGATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET in PG-TDSON-8 package, rated for 30 V V_DS, 1.6 mΩ R_DS(on) (max) at V_GS = 10 V, and 100 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge × R_DS(on) figure-of-merit, avalanche rating, and optimized performance for high-frequency DC/DC converters and synchronous rectification.

For engineers reviewing the BSC016N03LSGATMA1 datasheet, BSC016N03LSGATMA1 pinout, BSC016N03LSGATMA1 application, or BSC016N03LSGATMA1 equivalent, key selection criteria include its 1.6 mΩ on-resistance at 10 V gate drive, 47–63 nC total gate charge, 7.6 nF input capacitance, 1.0 K/W junction-to-case thermal resistance, and suitability for high-efficiency 12 V/48 V server and telecom power stages.

Technical Context

This OptiMOS™3 MOSFET employs trench-gate superjunction technology to achieve simultaneous low R_DS(on) and low Q_g, enabling fast switching with reduced conduction and switching losses. Its logic-level gate threshold (1–2.2 V) ensures full enhancement with standard 3.3 V or 5 V controllers, and its 290 mJ single-pulse avalanche energy supports robust operation under transient overvoltage conditions.

The device integrates a co-packaged body diode with 0.78–1.1 V forward voltage at 30 A and 30 nC reverse recovery charge, making it suitable for synchronous buck topologies where reverse recovery behavior directly impacts efficiency and EMI. Thermal design is facilitated by its 1 K/W R_thJC and bottom-side thermal pad in the PG-TDSON-8 package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Supports 12 V and 24 V input rails with margin for voltage spikes in industrial and server SMPS
R_DS(on) (max)	1.6 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 25 A, critical for high-current POL converters
Q_g (total)	47–63 nC - Low gate drive power requirement; compatible with standard PWM controllers without gate driver boost
I_D (cont.)	100 A @ T_C = 25 °C - Sustains high output current in compact, thermally constrained PCB layouts
R_thJC	1.0 K/W - Enables direct heatsinking via bottom thermal pad, reducing junction temperature rise by ~100 °C/W vs. standard SO-8
E_AS	290 mJ - Withstands single-pulse inductive energy during hard-switching or fault events without failure
C_iss	7600–10000 pF - Predictable input capacitance aids accurate gate drive timing and loop stability analysis

Pinout & Package

PG-TDSON-8 (Power-Flat, exposed-drain thermal pad), 5.15 mm × 6.15 mm × 1.27 mm, RoHS-compliant, halogen-free. Bottom-side thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain pads)	Drain connection (multi-pin parallel)	Low-inductance, high-current path; primary thermal conduction path to PCB copper
4 (Gate)	Control terminal	Logic-level compatible; requires ≤10 V drive for full enhancement; low C_iss/C_rss ratio minimizes Miller effect
8 (Source)	Reference node for gate drive and current sensing	Single-point source connection; enables Kelvin-source layout for accurate R_DS(on)-based current monitoring

Key Features

Feature	Design Value
Ultra-low FOM (Q_g × R_DS(on))	~75 nC·mΩ - Reduces combined switching + conduction loss in high-frequency (>500 kHz) DC/DC stages
Avalanche-rated	290 mJ single-pulse E_AS - Eliminates need for external clamping in flyback or active clamp circuits
Optimized for synchronous rectification	Q_g(sync) = 41–55 nC @ 4.5 V - Enables efficient low-voltage gate drive in secondary-side control schemes
Thermally enhanced package	R_thJC = 1.0 K/W - Allows >100 W power dissipation with minimal heatsink area on 6 cm² copper
JEDEC-qualified	J-STD-20/JESD22 compliant - Validated for reflow, humidity, and temperature cycling in automotive and industrial assembly

Applications

Server VRM

Telecom DC/DC

Use Scenario: 48 V to 12 V intermediate bus converter in high-density server power supply.

IC Role / Device Role / Timing Role: High-side synchronous FET in multiphase buck regulator operating at 600 kHz.

Use Value: 1.6 mΩ R_DS(on) and 47 nC Q_g reduce total loss by 18% vs. legacy 2.2 mΩ MOSFETs at 60 A per phase.

Use Scenario: Primary-side switch in isolated 48 V/54 V telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching FET handling 30 A peak current and 300 V transient stress.

Use Value: 290 mJ E_AS and 30 V V_BR(DSS) ensure reliable operation during line surges without snubber redesign.

Industrial PLC PSU

Automotive ADAS ECU

Use Scenario: 24 V input, 5 V/20 A point-of-load converter powering FPGA and memory subsystems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase buck with 3.3 V gate drive.

Use Value: Logic-level V_GS(th) (1–2.2 V) enables direct drive from microcontroller GPIO, eliminating level-shifter cost.

Use Scenario: 12 V input, 3.3 V/10 A power rail for radar processor and camera interface in ADAS domain controller.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in isolated flyback with tight thermal envelope.

Use Value: 1.0 K/W R_thJC allows 100% load operation at 85 °C ambient without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N04LGATMA1	40 V V_DS, 1.7 mΩ R_DS(on), higher Q_g (72 nC), same PG-TDSON-8 package	Higher voltage margin but increased switching loss at 500 kHz+; less optimal for 12 V systems	Select when 40 V rating is required for 24 V input with >100 V transients
IRLHS6342TRPBF	30 V V_DS, 2.2 mΩ R_DS(on), 35 nC Q_g, smaller PQFN 3.3×3.3 mm package	Lower gate charge but higher conduction loss; limited thermal capability (R_thJC = 2.5 K/W)	Select for space-constrained designs where peak current <40 A and thermal budget permits

Compared with IPB017N04LGATMA1 and IRLHS6342TRPBF, BSC016N03LSGATMA1 delivers the lowest R_DS(on) × Q_g product in its class, enabling highest efficiency in high-current, high-frequency 12–24 V DC/DC converters where thermal management is critical.

Availability

BSC016N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSC016N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™3 Power-MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies in datacenter, telecom, and industrial applications where low R_DS(on) and low gate charge are essential.

FAQ

What is the maximum safe operating temperature for BSC016N03LSGATMA1?

The device has a maximum junction temperature (T_j) of 150 °C and operates safely from –55 °C to +150 °C. At T_C = 100 °C, it sustains 100 A continuous drain current. Derating begins above 25 °C case temperature per the P_tot vs. T_C curve on page 4 of the datasheet, with thermal shutdown recommended at T_j ≥ 145 °C for reliability.

Can BSC016N03LSGATMA1 be used in synchronous rectification with 3.3 V gate drive?

Yes - its logic-level gate threshold (V_GS(th) = 1–2.2 V) ensures full enhancement at 3.3 V, and its R_DS(on) remains ≤2.3 mΩ at V_GS = 4.5 V. Gate charge metrics (Q_g(sync) = 41–55 nC) are specified for 0–4.5 V drive, confirming suitability for low-voltage synchronous FET applications.

Does this MOSFET require a gate resistor for stability in 600 kHz switching?

A gate resistor of 1.6 Ω is used in the datasheet's switching time test conditions (page 3), and typical designs use 1–3 Ω to dampen ringing while maintaining fast turn-on. Lower values (<1 Ω) may cause overshoot; higher values (>5 Ω) increase switching loss. Layout-dependent parasitic inductance must also be minimized.

Is the PG-TDSON-8 package lead-free and RoHS-compliant?

Yes - BSC016N03LSGATMA1 uses Pb-free plating and complies with RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. The package marking "016N03LS" and "G" suffix confirm compliance, and JEDEC J-STD-020 moisture sensitivity level is MSL3.

BSC016N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 131 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC016N03LSGATMA1 FAQ

1.How can I place an order for BSC016N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC016N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC016N03LSGATMA1 reliable?

The price and inventory of BSC016N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC016N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC016N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC016N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC016N03LSGATMA1?

BSC016N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC016N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC016N03LSGATMA1?

For technical support, including BSC016N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC016N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC016N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC016N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC016N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC016N03LSGATMA1?

All BSC016N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC016N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC016N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC016N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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