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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC016N03MSGATMA1

Name: BSC016N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC016N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC016N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC016N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 28A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC016N03MSGATMA1 from Infineon Technologies is an N-channel enhancement-mode Power-MOSFET in the OptiMOS™3 M-Series, designed for high-current synchronous rectification and load switching in 30 V DC-DC converters. It delivers R_DS(on) = 1.6 mΩ @ V_GS = 10 V, 225 A continuous drain current at T_C = 25 °C, and 100% avalanche tested robustness - deployed in notebook VRMs, GPU power delivery, and point-of-load (POL) modules.

For engineers reviewing the BSC016N03MSGATMA1 datasheet, BSC016N03MSGATMA1 pinout, BSC016N03MSGATMA1 application, or BSC016N03MSGATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), thermal resistance (R_thJC = 1 K/W), 4.5 V logic-level drive compatibility, and SuperSO8 package suitability for high-density PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-frequency switching in synchronous buck topologies. Its low Q_g (63–84 nC @ 4.5 V) and ultra-low C_iss (10–13 nF) minimize switching losses, while the integrated body diode supports reverse recovery with Q_rr = 30 nC under 400 A/µs di/dt.

The device operates with V_GS(th) = 1–2 V and exhibits stable R_DS(on) over temperature (±98% typical at 150 °C), enabling reliable operation in thermally constrained environments such as multi-phase CPU/GPU VRMs where junction-to-case thermal path dominates thermal management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail systems with margin
R_DS(on) max @ 10 V	1.6 mΩ - Enables <1 W conduction loss at 225 A, critical for POL efficiency
R_DS(on) max @ 4.5 V	2 mΩ - Ensures full enhancement with standard 5 V logic drivers (e.g., PWM controllers)
I_D continuous	225 A @ T_C = 25 °C - Supports high-current single-phase or parallel-phase VRM designs
Q_g total	63–84 nC @ 4.5 V - Low gate drive energy reduces driver IC loading and EMI
R_thJC	1 K/W - Enables direct heatsink mounting via exposed drain pad for >100 W dissipation
Q_rr	30 nC - Limits reverse recovery loss and shoot-through risk in synchronous FET operation

Pinout & Package

Package: SuperSO8 (PG-TDSON-8), thermally enhanced surface-mount package with exposed drain pad on bottom side for optimal heat transfer to PCB copper or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8 (Drain)	Power Drain (parallel-connected)	Four pins tied internally to drain terminal; used for high-current return path and thermal conduction
4 (Gate)	Control Input	Single gate connection; low capacitance enables fast turn-on/off with minimal driver effort
5, 6, 7 (Source)	Power Source / Reference	Three-source pins reduce source inductance and improve current sharing in high-di/dt applications

Key Features

Feature	Design Value
Optimized 4.5 V drive capability	Ensures full enhancement with common 5 V PWM controllers without level-shifting circuitry
Low gate charge × R_DS(on) FOM	Reduces combined conduction + switching losses in high-frequency SMPS (>500 kHz)
100% unclamped inductive avalanche rated	Withstands transient energy up to 340 mJ, eliminating need for external snubbers in ruggedized designs
Superior thermal resistance (R_thJC = 1 K/W)	Enables >125 W power dissipation with minimal ΔT between junction and heatsink
Pb-free, RoHS & halogen-free compliant	Meets IEC61249-2-21 and JEDEC J-STD-20 standards for industrial and computing end-equipment

Applications

Notebook VRM

GPU Power Delivery

Use Scenario: High-efficiency, multi-phase voltage regulator for Intel/AMD mobile CPUs with dynamic load steps up to 200 A/µs.

IC Role / Device Role: Synchronous high-side or low-side switch in buck converter phase legs.

Use Value: 1.6 mΩ R_DS(on) and 63 nC Q_g jointly reduce total power loss by ≥15% vs. legacy 30 V MOSFETs at 1 MHz switching.

Use Scenario: Compact, high-current power stage for discrete graphics cards requiring >300 W GPU core supply.

IC Role / Device Role: Low-side synchronous rectifier in interleaved buck converters with forced-air cooling.

Use Value: Exposed drain pad and 1 K/W R_thJC allow direct thermal coupling to heatsink, sustaining 225 A continuous without derating.

Server POL Module

Industrial DC-DC Converter

Use Scenario: Point-of-load regulator supplying ASIC/FPGA core rails (0.8–1.2 V) in datacenter servers with strict efficiency targets.

IC Role / Device Role: Primary switching FET in compact 6 mm × 6 mm half-bridge module.

Use Value: 2 mΩ @ 4.5 V ensures stable regulation under 5 V gate drive from digital PWM ICs, avoiding gate boosters.

Use Scenario: Isolated or non-isolated 24 V input to 5/3.3 V conversion in programmable logic controllers and motor drives.

IC Role / Device Role: Main power switch in high-reliability industrial SMPS with extended temperature range requirements.

Use Value: 150 °C max T_j, 100% avalanche testing, and JEDEC qualification ensure uptime in harsh ambient conditions (−40 to +85 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 1.8 mΩ @ 4.5 V; Q_g = 72 nC; SO-8 package (non-exposed drain)	Higher R_thJA (50 K/W vs. 1 K/W) limits power density; unsuitable for >100 A continuous without large copper area	Prefer when board space allows larger thermal pads and cost sensitivity outweighs thermal performance
DMTH3016LSD-13	R_DS(on) = 1.7 mΩ @ 4.5 V; Q_g = 68 nC; PowerDI3333 package with dual-side cooling	Lower footprint but higher R_thJC (1.5 K/W); requires both top and bottom thermal interface for full rating	Choose when vertical stacking or double-sided cooling is available and layout constraints favor smaller outline

Compared with IRLHS6342TRPBF and DMTH3016LSD-13, BSC016N03MSGATMA1 offers the lowest R_thJC and highest current rating in a standard SuperSO8 footprint - making it optimal for space-constrained, high-power-density VRMs where thermal path design is limited to bottom-side conduction.

Availability

BSC016N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook VRMs, GPU power stages, and server point-of-load (POL) converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for BSC016N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The OptiMOS™3 M-Series targets high-efficiency, high-current DC-DC conversion in computing and communications infrastructure - emphasizing low R_DS(on), fast switching, and ruggedness for next-generation VRMs and POL modules.

FAQ

What is the maximum safe operating temperature for BSC016N03MSGATMA1?

The device supports junction temperatures from −55 °C to +150 °C per IEC 68-1 climatic category 55/150/56. At T_C = 100 °C, continuous drain current derates to 142 A @ V_GS = 10 V. Thermal design must maintain T_j ≤ 150 °C using the specified R_thJC = 1 K/W path and adequate PCB copper area.

Does BSC016N03MSGATMA1 require a gate resistor for stability?

A gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance. The datasheet specifies switching times measured with R_G = 1.6 Ω; omitting it may cause overshoot, shoot-through, or oscillation in high-di/dt applications like multi-phase VRMs.

Can BSC016N03MSGATMA1 be used as a synchronous rectifier in a buck converter?

Yes - its low R_DS(on) (2 mΩ @ 4.5 V), fast reverse recovery (Q_rr = 30 nC), and low V_SD (0.8–1.1 V) make it ideal for low-side synchronous rectification. The integrated body diode supports freewheeling, and the device is qualified for repetitive avalanche in discontinuous conduction mode.

Is the SuperSO8 package of BSC016N03MSGATMA1 compatible with standard SO-8 reflow profiles?

Yes - it complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports standard lead-free reflow profiles (peak 260 °C). The exposed drain pad requires solder paste stencil design matching Infineon's recommended land pattern (8.1 × 8.1 mm, 9 thermal vias minimum) for mechanical reliability and thermal performance.

BSC016N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 173 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC016N03MSGATMA1 FAQ

1.How can I place an order for BSC016N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC016N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC016N03MSGATMA1 reliable?

The price and inventory of BSC016N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC016N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC016N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC016N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC016N03MSGATMA1?

BSC016N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC016N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC016N03MSGATMA1?

For technical support, including BSC016N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC016N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC016N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC016N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC016N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC016N03MSGATMA1?

All BSC016N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC016N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC016N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC016N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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