Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC019N04NSGATMA1

Name: BSC019N04NSGATMA1
Brand: Infineon Technologies
SKU: BSC019N04NSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSC019N04NSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC019N04NSGATMA1.pdf

Description:: MOSFET N-CH 40V 30A/100A TDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,727

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSC019N04NSGATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in SuperSO8 (PG-TDSON-8) package, rated for 40 V V_DS, 1.9 mΩ R_DS(on) max at V_GS = 10 V, and 204 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency synchronous rectifier or primary-side switch in high-current DC/DC converters and server VRMs.

For engineers reviewing the BSC019N04NSGATMA1 datasheet, BSC019N04NSGATMA1 pinout, BSC019N04NSGATMA1 application, or BSC019N04NSGATMA1 equivalent, key selection criteria include its 1.6 mΩ typical R_DS(on), 81–108 nC total gate charge, 100% avalanche-tested ruggedness, JEDEC-qualified reliability, and optimized FOM for fast-switching SMPS topologies.

Technical Context

This OptiMOS™3 device employs trench-based silicon technology to achieve ultra-low conduction loss while maintaining fast switching performance. Its gate threshold voltage (2–4 V) supports standard 10 V gate drive, and its low C_iss (6.6–8.8 nF) and C_rss (70 pF) minimize Miller-induced turn-off delay in hard-switched and synchronous buck stages.

The MOSFET integrates a robust body diode with 100 A continuous forward current capability, 0.85–1.2 V forward voltage at 50 A, and 100 nC reverse recovery charge-enabling reliable operation in synchronous rectification without external Schottky replacement in 48 V input systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V intermediate bus and point-of-load applications
R_DS(on), max	1.9 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at 100 A in PCB-mounted thermal layout
I_D, cont	204 A at T_C = 25 °C - Supports high-current phases in multi-phase CPU/GPU VRMs
Q_g	81–108 nC - Determines gate driver power requirement and switching loss trade-off in 300–1000 kHz designs
E_AS	295 mJ - Confirmed single-pulse avalanche energy rating ensures robustness against inductive switching transients
R_thJC	1 K/W (bottom side) - Enables direct thermal coupling to heatsink or copper pour for >100 W power dissipation

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), thermally enhanced surface-mount package with exposed drain pad on bottom side for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	Pins 1–7 and 8 are internally connected to drain; pins 1–7 are source-connected leads, pin 8 is drain tab - provides low-inductance, high-current path to PCB copper
Source (S)	Source (S)	Pins 1–3 - parallel source terminals reduce source inductance and improve current sharing in paralleled configurations
Gate (G)	Gate (G)	Pin 4 - isolated control terminal; requires <10 Ω gate resistor to damp ringing due to low Q_gd/Q_gs ratio

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~150–200 nC·mΩ - balances switching loss and conduction loss for 500 kHz+ synchronous buck stages
100% Unclamped Inductive Switching (UIS) Tested	295 mJ E_AS - guarantees safe operation under worst-case load dump or short-circuit conditions without derating
JEDEC J-STD-20/JESD22 Qualified	Rated for industrial temperature range (−55 to +150 °C) and reflow-compatible - suitable for automated SMT assembly
Halogen-Free & RoHS Compliant	Pb-free plating and IEC61249-2-21 compliant materials - meets global environmental compliance requirements for server and telecom hardware

Applications

Server VRM Phase Legs

48 V Input DC/DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage in data center servers.

IC Role / Device Role / Timing Role: Primary-side high-side or synchronous rectifier low-side MOSFET in interleaved 3–6 phase topology.

Use Value: 1.9 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 3.5 mΩ devices, enabling >95% efficiency at 200 A output.

Use Scenario: Step-down conversion from 48 V intermediate bus to 12 V or 5 V for storage and networking subsystems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in hard-switched or ZVS-enabled buck converter.

Use Value: 100 A diode rating and 100 nC Q_rr allow zero-voltage switching assist and eliminate need for external Schottky diode.

Telecom Rectifier Modules

Industrial Motor Drive Inverters

Use Scenario: AC/DC front-end PFC stage and isolated LLC secondary-side synchronous rectification in 3 kW telecom rectifiers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter operating at 200–500 kHz.

Use Value: Low C_oss (1.8–2.4 nF) minimizes capacitive turn-on loss during zero-voltage switching transitions.

Use Scenario: Half-bridge leg in compact 3–7.5 kW servo drive inverters for robotics and CNC equipment.

IC Role / Device Role / Timing Role: Low-side switch in IGBT gate driver auxiliary supply or isolated DC/DC bias rail generation.

Use Value: 150 °C T_j rating and 1 K/W R_thJC support operation in sealed enclosures with limited airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832TRPBF	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 110 nC; SO-8 package with higher R_thJA (62 K/W)	Lower current rating (120 A) and reduced thermal performance limit use in >150 A VRM phases	Preferable where gate drive margin is available and cost sensitivity outweighs thermal optimization
STL220N4F7AG	R_DS(on) = 1.7 mΩ @ 10 V; Q_g = 125 nC; PowerFLAT 5x6 package with dual-sided cooling	Higher gate charge increases switching loss; requires different PCB layout for top-side thermal interface	Preferred when board space is constrained and top-side heatsinking is feasible

Compared with IRF7832TRPBF and STL220N4F7AG, BSC019N04NSGATMA1 delivers the lowest R_DS(on) × Q_g product in SuperSO8, enabling highest efficiency in high-frequency, high-current VRMs without requiring layout changes for alternative thermal paths.

Availability

BSC019N04NSGATMA1 is available at Aetrix Electronics and suitable for server VRM design, 48 V telecom DC/DC conversion, and industrial motor drive bias supply applications requiring stable component supply and long-term production continuity.

Supply support for BSC019N04NSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™3 family, engineered specifically for high-efficiency, high-current DC/DC conversion in data center, telecom, and industrial power systems where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is 150 °C. At T_C = 25 °C, the device supports 204 A continuous drain current; however, this de-rates linearly to 129 A at T_C = 100 °C per datasheet Figure 2. Thermal design must ensure case temperature remains within limits using the 1 K/W R_thJC (bottom side) path to maintain rated current.

Is BSC019N04NSGATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes. Its low Q_rr (100 nC), fast body diode (t_rr < 50 ns), and low C_oss (1.8–2.4 nF) enable efficient zero-voltage switching in secondary-side synchronous rectification of LLC converters operating up to 500 kHz, as confirmed in Infineon Application Note AN2017-04.

Does this MOSFET require a negative gate turn-off voltage to prevent shoot-through?

No. With a gate threshold voltage of 2–4 V and no inherent depletion-mode behavior, standard 0 V to 10 V gate drive suffices. However, a small negative turn-off bias (−2 V) may be used in high-dV/dt environments to improve noise immunity-this is optional and not required for functional operation.

How is the SuperSO8 package different from standard SO-8 in terms of thermal and electrical performance?

SuperSO8 (PG-TDSON-8) features an exposed drain pad on the bottom and shortened leadframe, reducing R_thJC to 1 K/W (vs. ~3–4 K/W for standard SO-8) and lowering source inductance by 30–40%. This enables higher current handling and improved switching waveform fidelity in high-frequency power stages.

BSC019N04NSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 108 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC019N04NSGATMA1 FAQ

1.How can I place an order for BSC019N04NSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC019N04NSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC019N04NSGATMA1 reliable?

The price and inventory of BSC019N04NSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC019N04NSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC019N04NSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC019N04NSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC019N04NSGATMA1?

BSC019N04NSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC019N04NSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC019N04NSGATMA1?

For technical support, including BSC019N04NSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC019N04NSGATMA1 requirements.

6.How does Aetrix verify that BSC019N04NSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC019N04NSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC019N04NSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC019N04NSGATMA1?

All BSC019N04NSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC019N04NSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC019N04NSGATMA1 part is unused and in its original packaging.

Return procedure for BSC019N04NSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.