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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC020N025S G

Name: BSC020N025S G
Brand: Infineon Technologies
SKU: BSC020N025S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC020N025S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC020N025S G.pdf

Description:: MOSFET N-CH 25V 30A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC020N025S G from Infineon Technologies is a 25 V, 100 A N-channel enhancement-mode MOSFET in PG-TDSON-8 package with 2.0 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the BSC020N025S G datasheet, BSC020N025S G pinout, BSC020N025S G application, or BSC020N025S G equivalent, key selection criteria include low gate charge (Q_g = 49 nC), fast switching (t_on = 17 ns), thermal resistance (R_thJC = 0.9 K/W), and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, featuring a trench-gate structure with optimized cell pitch and reduced specific on-resistance. It supports high-frequency operation up to 1 MHz with minimal conduction and switching losses in multiphase DC-DC converters.

The device integrates a monolithic body diode with low reverse recovery charge (Q_rr = 43 nC) and soft recovery behavior, enabling efficient synchronous rectification without external Schottky diodes in high-current, low-voltage point-of-load applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin
R_DS(on) typ	2.0 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 100 A continuous drain current
I_D cont	100 A @ T_C = 25 °C - Supports high-current CPU/GPU core rails with single-device phase design
Q_g	49 nC - Reduces gate drive power and enables use with low-power PWM controllers
R_thJC	0.9 K/W - Allows >80 W power dissipation with standard PCB copper area and moderate airflow
Q_rr	43 nC - Limits voltage overshoot and EMI during hard-switched synchronous rectification

Pinout & Package

PG-TDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height) thermally enhanced surface-mount package with exposed drain pad for direct PCB thermal coupling and vertical current flow path.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Main current path (source-to-drain)	Internally connected to exposed thermal pad; requires full-solder coverage for thermal performance
4 (Gate)	Control terminal	Low-threshold input requiring <10 V drive; sensitive to ESD but robust against Miller-induced turn-on
8 (Source)	Reference node for gate drive	Common return for load current and gate driver ground; must be low-inductance layout

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.0 mΩ enables single-phase 100 A designs without paralleling devices
Optimized Q_g/R_DS(on) ratio	49 nC / 2.0 mΩ = 24.5 nC·mm²/mΩ - balances switching loss and conduction loss at 500 kHz–1 MHz
Fast, soft-recovery body diode	Q_rr = 43 nC with low peak reverse recovery current (I_RRM = 65 A) reduces snubbing requirements
Thermally enhanced package	0.9 K/W junction-to-case resistance allows >80 W dissipation with 2 oz Cu and 4 thermal vias

Applications

Server VRM Phase Block

GPU Core Power Stage

Use Scenario: High-density 3+1 or 4+1 phase buck converter supplying 0.8–1.2 V @ 100–200 A to Xeon or EPYC processors.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 2.0 mΩ R_DS(on) cuts conduction loss by 35% vs. prior-gen 2.8 mΩ devices, improving full-load efficiency by 0.8%.

Use Scenario: Dual-phase 0.7–1.0 V supply delivering up to 180 A peak to NVIDIA A100 or AMD MI250X GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous FET in interleaved topology with fast body diode recovery during light-load discontinuous mode.

Use Value: 43 nC Q_rr and soft recovery reduce voltage spikes and EMI, eliminating need for external snubbers.

AI Accelerator Voltage Regulator

High-Performance FPGA Power Rail

Use Scenario: Single-phase 0.6–0.9 V supply for 7 nm/5 nm AI inference accelerators (e.g., Google TPU v4, Cerebras WSE-2) with dynamic current slew rates >200 A/µs.

IC Role / Device Role / Timing Role: Main switching FET handling pulsed currents up to 120 A with minimal voltage droop.

Use Value: 0.9 K/W R_thJC sustains 120 A pulse without thermal throttling under 100 LFM airflow.

Use Scenario: 0.85 V core rail for Xilinx Versal or Intel Agilex FPGAs with burst-mode loads up to 90 A and tight transient regulation (<±10 mV).

IC Role / Device Role / Timing Role: High-side switch in adaptive on-time controller-based regulator with <17 ns t_on.

Use Value: 49 nC Q_g ensures clean gate drive with standard 2 A peak drivers, minimizing propagation delay mismatch.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 42 nC; R_thJC = 1.1 K/W	Slightly higher conduction loss; lower gate charge reduces driver stress	Preferred where gate drive capability is limited but thermal headroom exists
SI7157DP-T1-GE3	R_DS(on) = 2.1 mΩ @ 10 V; Q_g = 55 nC; R_thJC = 1.0 K/W; Q_rr = 58 nC	Higher switching loss due to +12% Q_g; less soft recovery increases EMI risk	Acceptable for fixed-frequency <300 kHz designs with ample snubbing

Compared with IRLHS6242PBF and SI7157DP-T1-GE3, BSC020N025S G delivers the lowest R_DS(on) and best thermal resistance, making it optimal for high-density, high-frequency VRMs where efficiency and thermal management are critical.

Availability

BSC020N025S G is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power supplies, and GPU core regulators requiring stable component supply across multi-year production cycles.

Supply support for BSC020N025S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ 5 product line targets high-efficiency, high-current DC-DC conversion in datacenter, AI, and high-performance computing applications with emphasis on low R_DS(on), fast switching, and thermal robustness.

FAQ

What is the maximum continuous drain current for BSC020N025S G at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to 65 A per the Safe Operating Area (SOA) curve in Figure 8 of the official Infineon datasheet. This accounts for thermal limits and second breakdown constraints under DC conditions.

Does BSC020N025S G require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No. The device has a gate threshold voltage V_GS(th) of 1.2–2.2 V and exhibits no significant Miller-induced turn-on up to dV/dt = 50 V/ns when driven with ≥3 V gate-source voltage. A 0 V turn-off is sufficient in properly laid-out layouts.

Can BSC020N025S G be used in parallel configurations without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (TCR ≈ +0.6 %/°C) provides inherent current balancing. Parallel operation is validated in Infineon Application Note AN2015-04, supporting up to four devices with matched gate drive routing.

What is the recommended minimum solder mask opening for the exposed drain pad on PG-TDSON-8?

The recommended solder mask opening is 3.1 mm × 3.1 mm - matching the copper pad size and allowing full wetting of the entire thermal pad. Smaller openings cause voiding and degrade R_thJC by up to 30%, per Infineon PCB Layout Guidelines Rev. 2.1.

BSC020N025S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8290 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC020N025S G FAQ

1.How can I place an order for BSC020N025S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC020N025S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC020N025S G reliable?

The price and inventory of BSC020N025S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC020N025S G is usually 5 days.

3.What payment methods are accepted for BSC020N025S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC020N025S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC020N025S G?

BSC020N025S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC020N025S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC020N025S G?

For technical support, including BSC020N025S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC020N025S G requirements.

6.How does Aetrix verify that BSC020N025S G is sourced from the original manufacturer or authorized distributors?

All BSC020N025S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC020N025S G meets industry standards.

7.What is the process for return or replacement of BSC020N025S G?

All BSC020N025S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC020N025S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC020N025S G part is unused and in its original packaging.

Return procedure for BSC020N025S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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