Infineon Technologies BSC020N03LSGATMA2

Overview

BSC020N03LSGATMA2 from Infineon Technologies is a 30 V, 2.0 mΩ (at V_GS = 10 V), 100 A (continuous) N-channel TrenchMOS power MOSFET in PG-TSDSON-8 package, optimized for high-efficiency synchronous buck converters in server and telecom VRMs.

For engineers reviewing the BSC020N03LSGATMA2 datasheet, BSC020N03LSGATMA2 pinout, BSC020N03LSGATMA2 application, or BSC020N03LSGATMA2 equivalent, key selection criteria include R_DS(on) at 4.5 V, thermal resistance (R_thJA = 33 K/W), peak pulsed current rating (I_DM = 400 A), and gate charge (Q_G = 47 nC).

Technical Context

This MOSFET employs Infineon's latest TrenchStop™ 6 silicon process with optimized cell pitch and reduced gate-drain charge (Q_gd = 12.5 nC), enabling fast switching and low switching losses in high-frequency DC-DC stages. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) supports direct drive from PWM controllers without level-shifting.

The device features integrated ESD protection (HBM Class 2, >2 kV), specified avalanche energy rating (E_AS = 210 mJ), and guaranteed 100% UIS testing - critical for robust operation under transient overloads in point-of-load regulators.

Key Specifications

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch, exposed drain pad on bottom).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-voltage MOSFET applications.

Compared with NTMFS5C673NL and SiR626DP, BSC020N03LSGATMA2 delivers the lowest R_DS(on) and highest UIS rating in its class, making it optimal for high-reliability, high-density VRMs where both conduction loss and transient robustness are design-critical.

Availability

BSC020N03LSGATMA2 is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, GPU power delivery, and AI accelerator modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for BSC020N03LSGATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D centers.

BSC020N03LSGATMA2 belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and communications infrastructure.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_J) is 150 °C. Derating begins at 100 °C ambient, with continuous I_D limited to 100 A only when R_thJA ≤ 33 K/W is achieved via 1-in² 2-oz copper pad and 6 thermal vias under the exposed drain pad.

Does BSC020N03LSGATMA2 require a gate resistor for stability in 600 kHz VRM designs?

A 2.2 Ω gate resistor is recommended between driver output and gate terminal to dampen ringing caused by PCB trace inductance and gate capacitance (C_iss = 3700 pF). This prevents false turn-on during high dV/dt transitions in multiphase layouts.

Can this MOSFET be used in parallel configurations without current-sharing resistors?

Yes - positive temperature coefficient of R_DS(on) (TCR ≈ +0.65 mΩ/°C) enables inherent current balancing. Parallel operation requires matched layout symmetry, identical gate drive paths, and shared source inductance < 0.5 nH per device to maintain <5% current imbalance at 100 A total.

Is the PG-TSDSON-8 package lead-free and RoHS-compliant?

Yes - BSC020N03LSGATMA2 uses lead-free matte tin plating on terminals and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. The package substrate is halogen-free per IEC 61249-2-21.