Infineon Technologies BSC022N03S

Overview

BSC022N03S from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in P-TDSON-8 package, rated for 30 V V_DS, 2.2 mΩ R_DS(on) at 10 V_GS, and 50 A continuous drain current at T_C = 25 °C. It delivers fast switching, low gate charge × R_DS(on) figure-of-merit (FOM), and avalanche-rated ruggedness for high-efficiency DC/DC converters in notebook PCs.

For engineers reviewing the BSC022N03S datasheet, BSC022N03S pinout, BSC022N03S application, or BSC022N03S equivalent, key selection criteria include its 2.2 mΩ on-resistance at 10 V_GS, 43–58 nC total gate charge, JEDEC1 qualification, dv/dt rating of 6 kV/µs, and thermal resistance R_thJC of 1.2 K/W - all critical for synchronous buck converter high-side or low-side FET design.

Technical Context

This MOSFET employs trench-based silicon technology optimized for high-frequency switching in 30 V-class point-of-load regulators. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers, while low C_iss (5.6–7.5 nF) and C_rss (0.25–0.38 nF) minimize Miller-induced turn-off delay and improve EMI behavior.

The device integrates a robust body diode with Q_rr ≤ 20 nC and V_SD ≤ 1.0 V at 50 A, supporting efficient synchronous rectification and hard-switched freewheeling. Its 800 mJ single-pulse avalanche energy and 6 cm² PCB cooling layout support reliable operation under transient overvoltage and short-circuit conditions.

Key Specifications

Pinout & Package

P-TDSON-8 (Power-Transistor Dual Small Outline No-lead, 8-pin) is a surface-mount, thermally enhanced leadless package with exposed drain pad (pins 1–3, 5–7 = source; pin 4 = gate; pin 8 = drain). The bottom-side thermal pad must be soldered to ≥6 cm² copper area for rated power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLHS6342TRPBF and DMT6009LPS-13, BSC022N03S offers superior avalanche ruggedness (800 mJ), lower R_thJC (1.2 K/W), and tighter R_DS(on) tolerance (1.8–2.2 mΩ), making it preferred for thermally demanding, high-reliability notebook and server VRMs where transient immunity and thermal predictability are critical.

Availability

BSC022N03S is available at Aetrix Electronics and suitable for notebook DC/DC converters, server VRMs, and industrial POL modules requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for BSC022N03S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The OptiMOS®2 product line targets high-frequency, high-efficiency power conversion in portable and computing applications, emphasizing low R_DS(on), fast switching, and ruggedness in compact packages like P-TDSON-8.

FAQ

Is BSC022N03S suitable for synchronous rectification in a 30 V input buck converter?

Yes. Its low R_DS(on) (2.2 mΩ), low V_SD (≤0.81 V), and Q_rr ≤20 nC enable efficient synchronous rectification at 30 V input. The device's 50 A continuous current rating and 1.2 K/W R_thJC support high-current, high-density designs when mounted on ≥6 cm² copper.

What is the maximum recommended gate resistor for driving BSC022N03S at 1 MHz?

For 1 MHz operation, a gate resistor of 1–2.7 Ω is recommended to balance switching speed and gate ringing. With Q_g = 43–58 nC and typical gate driver output impedance <1 Ω, this range achieves ~10–15 ns rise/fall times while suppressing oscillation caused by L_g–C_iss resonance.

Does BSC022N03S require a negative gate turn-off voltage to prevent dv/dt-induced turn-on?

No. Its 6 kV/µs dv/dt rating and 1.2–2.0 V gate threshold ensure immunity to false turn-on under typical buck converter edge rates. However, a small gate-to-source capacitor (100–470 pF) is advised in high-noise environments to further suppress Miller coupling.

Can BSC022N03S replace BSC014N03LS in an existing design?

Not directly. While both are 30 V OptiMOS devices, BSC014N03LS has lower R_DS(on) (1.4 mΩ) and higher Q_g (65 nC). Swapping requires re-evaluating gate drive strength, thermal margin, and switching loss trade-offs; layout changes may be needed due to different thermal pad requirements.