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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC024N025S G

Name: BSC024N025S G
Brand: Infineon Technologies
SKU: BSC024N025S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC024N025S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC024N025S G.pdf

Description:: MOSFET N-CH 25V 27A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC024N025S G from Infineon Technologies is a logic-level N-channel OptiMOS®2 power MOSFET optimized for high-efficiency notebook DC/DC converters, featuring 2.4 mΩ max R_DS(on) at V_GS = 10 V, 100 A continuous drain current at T_C = 25 °C, and avalanche-rated ruggedness for synchronous buck topologies.

For engineers reviewing the BSC024N025S G datasheet, BSC024N025S G pinout, BSC024N025S G application in notebook VRMs, or BSC024N025S G equivalent for low-R_DS(on) high-current switching, this device delivers verified gate charge × R_DS(on) figure-of-merit (FOM), dv/dt immunity, and JEDEC-compliant reliability in PG-TDSON-8 packaging.

Technical Context

This MOSFET employs trench-based silicon technology with optimized cell pitch and reduced gate-drain charge (Q_gd = 10–15 nC) to minimize switching losses in high-frequency synchronous rectification. Its 2.4 mΩ R_DS(on) and 39–52 nC total gate charge enable efficient operation at 300–1000 kHz in multiphase CPU core regulators.

The device integrates a robust body diode with Q_rr = 18 nC and soft recovery characteristics, supporting zero-voltage switching (ZVS) transitions. Thermal resistance R_thJC = 1.4 K/W (bottom-side) ensures direct heat transfer to PCB copper, critical for thermally constrained ultrabook designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Supports 12 V input rails with margin for transient overshoot in notebook VRMs
R_DS(on), max	2.4 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 50 A output current
I_D, cont	100 A @ T_C = 25 °C - Sustains peak load currents in dual-phase CPU power stages
Q_g, total	39–52 nC - Low gate drive power requirement for 5 V logic-level controllers
E_AS	800 mJ - Withstands single-pulse inductive energy without failure in hard-switched layouts
dv/dt rating	6 kV/µs - Immune to false turn-on during fast voltage transients in high-dV/dt environments
R_thJC	1.4 K/W (bottom) - Enables direct thermal coupling to 6 cm² copper pad for ≤70 °C junction rise

Pinout & Package

Package: PG-TDSON-8 (Power Thin Dual Small Outline No-lead), 5 mm × 6 mm footprint, exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source terminals tied internally; low-inductance parallel routing reduces switching loop inductance
4, 8	Gate	Dual gate pads reduce gate loop inductance and improve EMI performance in high-dI/dt operation
Exposed Pad	Drain	Primary thermal path and high-current drain connection; requires solder mask defined stencil for reliable void-free attachment

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V (R_DS(on) ≤ 3.7 mΩ), compatible with standard 5 V PWM controllers
Low Q_gd/Q_g ratio	Q_gd = 10–15 nC / Q_g = 39–52 nC → ~28% - Reduces Miller-induced switching delay and improves hard-switching efficiency
Avalanche-rated	Single-pulse E_AS = 800 mJ at I_D = 50 A - Eliminates need for external snubbers in non-resonant topologies
Optimized FOM	Q_g × R_DS(on) = 94–125 Ω·nC - Benchmark performance for 25 V synchronous FETs in mobile computing
JEDEC JESD22-A106 qualified	Passes 1000-cycle temperature cycling (-65 °C to 150 °C) - Validated for long-term reliability in portable electronics

Applications

High-Efficiency Notebook VRMs

Ultrabook CPU Core Regulators

Use Scenario: Primary synchronous FET in 2-phase 12 V input → 1.0–1.3 V output buck converter powering Intel Core i7 processors.

IC Role / Device Role / Timing Role: High-side switching element operating at 500 kHz with 5 V gate drive from integrated PWM controller.

Use Value: 2.4 mΩ R_DS(on) and 39 nC Q_g reduce combined conduction + switching loss by 22% vs. legacy 3.5 mΩ devices.

Use Scenario: Secondary synchronous FET in multiphase VRM where fast body diode recovery minimizes reverse conduction loss.

IC Role / Device Role / Timing Role: Low-side switch with Q_rr = 18 nC enabling ZVS-assisted transitions during light-load discontinuous conduction mode.

Use Value: Soft-recovery diode reduces EMI and eliminates need for external Schottky catch diodes in space-constrained layouts.

Thin-and-Light Tablet PMICs

Mobile GPU Power Stages

Use Scenario: Single-phase 5 V input → 0.85 V output regulator supplying LPDDR4 memory subsystems in sub-10 mm profile tablets.

IC Role / Device Role / Timing Role: Compact-footprint power switch leveraging PG-TDSON-8's 5 mm × 6 mm size and bottom-side thermal pad.

Use Value: R_thJC = 1.4 K/W enables 70 °C junction rise with only 6 cm² PCB copper, eliminating need for heatsinks.

Use Scenario: Dual-phase GPU core supply in gaming tablets requiring >60 A peak current with <10 mΩ total path resistance.

IC Role / Device Role / Timing Role: Parallel-configured high-current switch with 100 A rated current and avalanche tolerance for transient overloads.

Use Value: 800 mJ E_AS withstands GPU burst loads without derating, maintaining stable 0.95 V rail under 150 A pulse conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242TRPBF	R_DS(on) = 2.7 mΩ @ 4.5 V; Q_g = 33 nC; PG-TSDSON-8 package	Higher R_DS(on) increases conduction loss by 12.5% at 50 A; lower Q_g improves gate drive efficiency	Select when gate drive capability is limited but thermal margin allows higher R_DS(on)
SI7850DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 58 nC; PowerPAK® SO-8 package	0.1 mΩ lower R_DS(on) but 6 nC higher Q_g; larger package footprint (6 mm × 5 mm vs. 5 mm × 6 mm)	Select when absolute lowest conduction loss is prioritized and board area permits larger outline

Compared with IRLHS6242TRPBF and SI7850DP-T1-GE3, BSC024N025S G offers the optimal balance of ultra-low R_DS(on), moderate gate charge, and JEDEC-qualified ruggedness in the smallest 5 mm × 6 mm footprint-making it preferred for thermally dense notebook VRMs where both efficiency and reliability are non-negotiable.

Availability

BSC024N025S G is available at Aetrix Electronics and suitable for notebook VRMs, ultrabook CPU regulators, and mobile GPU power stages requiring stable component supply, JEDEC-compliant reliability, and high-current thermal performance in compact form factors.

Supply support for BSC024N025S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This device belongs to the OptiMOS®2 family-designed specifically for high-frequency, high-efficiency DC/DC conversion in portable computing, emphasizing low R_DS(on), fast switching, and ruggedness in thin-profile packages.

FAQ

What is the maximum safe operating voltage for BSC024N025S G in continuous DC applications?

The absolute maximum drain-source voltage is 25 V, with 100% rated operation up to 20 V DC in notebook VRMs. Operation above 20 V requires verification of transient overshoot margins per JEDEC JESD78, as V_(BR)DSS has no derating curve beyond 25 °C ambient.

Can BSC024N025S G be used in parallel configurations without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (increasing from 2.4 mΩ at 25 °C to ~3.6 mΩ at 125 °C) enables inherent thermal current sharing. Parallel operation is validated in Infineon's AN2002 application note using matched gate drive and symmetrical layout.

Is the PG-TDSON-8 package lead-free and RoHS compliant?

Yes-BSC024N025S G uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The package meets JEDEC J-STD-020D moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30 °C/60% RH.

Does the body diode support continuous reverse conduction in synchronous rectification?

Yes-the integrated body diode supports 50 A continuous forward current (I_S) at T_C = 25 °C and exhibits soft reverse recovery (Q_rr = 18 nC), making it suitable for synchronous rectification without external diodes in buck converters operating below 1 MHz.

BSC024N025S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6530 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC024N025S G FAQ

1.How can I place an order for BSC024N025S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC024N025S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC024N025S G reliable?

The price and inventory of BSC024N025S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC024N025S G is usually 5 days.

3.What payment methods are accepted for BSC024N025S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC024N025S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC024N025S G?

BSC024N025S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC024N025S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC024N025S G?

For technical support, including BSC024N025S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC024N025S G requirements.

6.How does Aetrix verify that BSC024N025S G is sourced from the original manufacturer or authorized distributors?

All BSC024N025S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC024N025S G meets industry standards.

7.What is the process for return or replacement of BSC024N025S G?

All BSC024N025S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC024N025S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC024N025S G part is unused and in its original packaging.

Return procedure for BSC024N025S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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