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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC025N03LSGATMA1

Name: BSC025N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC025N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC025N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC025N03LSGATMA1.pdf

Description:: MOSFET N-CH 30V 25A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC025N03LSGATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET in SuperSO8 (PG-TDSON-8) package, optimized for high-efficiency DC/DC converters and synchronous rectification. It delivers 30 V V_DS, 2.5 mΩ R_DS(on) at V_GS = 10 V, 147 A continuous drain current at T_C = 25 °C, and is avalanche-rated for robustness in switching power supplies.

For engineers reviewing the BSC025N03LSGATMA1 datasheet, BSC025N03LSGATMA1 pinout, BSC025N03LSGATMA1 application, or BSC025N03LSGATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), thermal resistance of 1.5 K/W (junction-to-case, bottom), and compatibility with 4.5 V logic-level drive in high-density SMPS designs.

Technical Context

This OptiMOS™3 device employs trench-based silicon technology to achieve ultra-low on-resistance and fast switching performance. Its gate threshold voltage (1–2.2 V) ensures reliable turn-on with standard logic drivers, while the 27–36 nC total gate charge (at V_GS = 0–4.5 V) supports high-frequency operation up to several hundred kHz in buck converters.

The MOSFET integrates a robust body diode with 20 nC reverse recovery charge (Q_rr) and 0.8–1.1 V forward voltage (V_SD), enabling efficient synchronous rectification. Thermal design is facilitated by low junction-to-case resistance (1.5 K/W) and qualification per JEDEC J-STD-20/JESD22 for industrial reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications
R_DS(on), max	2.5 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 20 A in compact PCB layouts
I_D, cont	147 A at T_C = 25 °C - Supports high-current output stages without parallel devices
Q_g	27–36 nC (0–4.5 V) - Low gate drive power requirement for 500 kHz+ PWM control
R_thJC	1.5 K/W (bottom side) - Direct thermal path to heatsink or copper pour improves thermal headroom
V_GS(th)	1–2.2 V - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIO
E_AS	135 mJ - Withstands single-pulse inductive energy in hard-switched topologies

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), surface-mount, exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8 (Drain)	Drain (D)	Internally connected to exposed copper pad - primary current path and thermal interface
4 (Gate)	Gate (G)	Control terminal; requires low-inductance routing to minimize switching oscillation
5, 6, 7 (Source)	Source (S)	Return path for load current; tied to power ground plane for low EMI

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver IC in many 3.3 V/5 V systems
Low R_DS(on) × Q_g FOM	~67.5 mΩ·nC - balances conduction and switching losses for peak efficiency in 300–1000 kHz DC/DC
Avalanche-rated	135 mJ single-pulse E_AS - provides ruggedness against inductive kickback without external snubbers
Pb-free & halogen-free	RoHS-compliant plating per IEC61249-2-21 - meets environmental compliance for global industrial shipments

Applications

Server VRMs

Industrial DC/DC Modules

Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage in 1U servers.

IC Role / Device Role / Timing Role: Synchronous high-side and low-side switch in 400–600 kHz phase-legs.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 3.5 mΩ MOSFETs, lowering thermal density in constrained airflow environments.

Use Scenario: Isolated 24 V to 5 V/12 V DC/DC converters in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier.

Use Value: 147 A rating and 1.5 K/W R_thJC allow full-load operation at 70 °C ambient without derating, simplifying thermal design.

Automotive ADAS Power Supplies

Telecom Point-of-Load Converters

Use Scenario: 12 V input buck regulators powering radar sensor SoCs and camera modules.

IC Role / Device Role / Timing Role: High-efficiency step-down switch in AEC-Q101-qualified power subsystems.

Use Value: Avalanche rating and -55 °C to +150 °C operating range ensure reliability under automotive load-dump and cold-crank conditions.

Use Scenario: 48 V to 3.3 V/1 V point-of-load converters in 5G base station RF front-end cards.

IC Role / Device Role / Timing Role: Final-stage synchronous rectifier in multiphase buck converters running at 1 MHz.

Use Value: Low Q_g (27–36 nC) and fast switching (t_r = 6.2 ns) minimize dead-time losses and improve transient response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.2 mΩ @ 4.5 V; Q_g = 15.5 nC; SO-8 package	Lower gate charge but higher on-resistance - better for very high frequency (>1 MHz), lower current (<50 A) apps	Select when prioritizing switching speed over conduction loss in space-constrained PoL designs
DMTH3007LPSQ-13	R_DS(on) = 2.7 mΩ @ 4.5 V; Q_g = 32 nC; PowerDI5060 package	Larger footprint, higher thermal resistance (R_thJC = 2.0 K/W) - suited for lower-power, cost-sensitive industrial use	Choose for legacy board compatibility where SO-8 is unavailable and thermal margin exceeds 10 °C

Compared with IRLHS6342TRPBF and DMTH3007LPSQ-13, BSC025N03LSGATMA1 offers the lowest R_DS(on) × Q_g FOM and best thermal performance in SuperSO8, making it optimal for high-current, high-efficiency 300–800 kHz DC/DC where both conduction and thermal management are critical.

Availability

BSC025N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and automotive ADAS power supplies requiring stable component supply and long-term production continuity.

Supply support for BSC025N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™3 family, engineered specifically for high-efficiency, high-current DC/DC conversion in computing, telecom, and industrial power systems where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum safe operating temperature for BSC025N03LSGATMA1?

The device has a maximum junction temperature (T_j) of 150 °C and operates across -55 °C to +150 °C storage and operating range. At T_C = 100 °C, continuous drain current drops to 93 A (V_GS = 10 V), requiring thermal design that maintains case temperature below this limit using the 1.5 K/W R_thJC path.

Is BSC025N03LSGATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes - its low R_DS(on) (2.5 mΩ), fast switching (t_f = 6.0 ns), and low Q_rr (20 nC) make it well-suited for secondary-side synchronous rectification in LLC topologies up to 300 kHz. The body diode's 0.8–1.1 V V_SD also supports controlled freewheeling during dead time.

Does BSC025N03LSGATMA1 require a gate resistor for stability?

A gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance. The datasheet specifies switching times with R_G = 1.6 Ω; omitting it may cause overshoot, shoot-through, or EMI issues in high-di/dt applications like multiphase VRMs.

How does the SuperSO8 package compare thermally to traditional SO-8?

SuperSO8 features an exposed drain pad that reduces R_thJC to 1.5 K/W (vs. ~60 K/W in standard SO-8), enabling >5× higher power dissipation. This allows the BSC025N03LSGATMA1 to deliver 147 A continuously - impossible in conventional SO-8 - by routing heat directly to the PCB copper or heatsink.

BSC025N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC025N03LSGATMA1 FAQ

1.How can I place an order for BSC025N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC025N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC025N03LSGATMA1 reliable?

The price and inventory of BSC025N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC025N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC025N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC025N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC025N03LSGATMA1?

BSC025N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC025N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC025N03LSGATMA1?

For technical support, including BSC025N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC025N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC025N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC025N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC025N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC025N03LSGATMA1?

All BSC025N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC025N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC025N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC025N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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