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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC025N03MSGATMA1

Name: BSC025N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC025N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC025N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC025N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 100A TDSON-8

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Product details

Overview

BSC025N03MSGATMA1 from Infineon Technologies is an N-channel enhancement-mode Power-MOSFET in the OptiMOS™3 M-Series, rated for 30 V drain-source voltage, with R_DS(on) of 2.5 mΩ at V_GS = 10 V and 3 mΩ at V_GS = 4.5 V, supporting continuous drain current up to 147 A at T_C = 25 °C. It serves as a high-efficiency synchronous rectifier or main switch in notebook DC-DC converters, GPU power delivery (VGA), and point-of-load (POL) regulators.

For engineers reviewing the BSC025N03MSGATMA1 datasheet, BSC025N03MSGATMA1 pinout, BSC025N03MSGATMA1 application, or BSC025N03MSGATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), 100% avalanche testing, JEDEC-qualified thermal performance, and compatibility with 4.5 V logic-level gate drive in high-frequency SMPS designs.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for fast switching and minimal conduction loss in synchronous buck topologies. Its low R_DS(on) at 4.5 V enables direct drive from standard PWM controllers without level-shifting, while its C_iss = 5700–7600 pF and Q_g = 36–48 nC (at 0–4.5 V) support efficient operation above 500 kHz.

The device integrates a robust body diode with Q_rr = 20 nC and V_SD = 0.82–1.1 V at I_F = 30 A, enabling reliable reverse recovery in hard-switched and synchronous rectification modes. Thermal resistance R_thJC = 1.5 K/W (bottom side) ensures effective heat transfer to PCB copper when mounted on 6 cm² cooling area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 5 V/3.3 V output POL stages
R_DS(on) @ V_GS=10 V	2.5 mΩ - Enables <1 W conduction loss at 20 A, critical for high-current CPU/GPU VRMs
R_DS(on) @ V_GS=4.5 V	3 mΩ - Supports direct interface with 5 V logic drivers, eliminating gate driver ICs in compact designs
I_D, continuous	147 A @ T_C=25 °C - Sustains peak load currents in multi-phase notebook VRMs without derating
Q_g	36–48 nC (0–4.5 V) - Low gate charge minimizes drive power and enables fast turn-on (<22 ns delay) in MHz-class SMPS
E_AS	135 mJ - Withstands single-pulse inductive energy during overcurrent events without failure
R_thJC	1.5 K/W - Efficient junction-to-case thermal path supports >80 W power dissipation with standard heatsinking

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), surface-mount, exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8 (Drain)	Power Drain Connection	Internally connected to exposed copper pad; primary current path and thermal conduction path to PCB
4 (Gate)	Control Input	High-impedance MOS gate requiring low-inductance routing to minimize ringing and EMI
5, 6, 7 (Source)	Power Source Reference	Common return path for load current; ties to power ground plane and gate driver reference

Key Features

Feature	Design Value
Optimized 4.5 V gate drive	Enables direct interface with 5 V PWM controllers (e.g., ISL62xx, RT880x), reducing BOM count and layout complexity
Low Q_g × R_DS(on) FOM	~108 nC·mΩ - Balances switching and conduction losses for highest efficiency in 300–1000 kHz POL converters
100% avalanche tested	Guarantees ruggedness against inductive kickback in unregulated or fault conditions without external snubbers
JEDEC-qualified reliability	Complies with J-STD-020 (reflow) and JESD22-A108 (temperature cycling), ensuring long-term stability in consumer-grade thermal profiles

Applications

Notebook CPU Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, multi-phase buck converter supplying dynamic 0.7–1.4 V to Intel/AMD mobile CPUs under burst loads.

IC Role / Device Role / Timing Role: Primary high-side synchronous switch operating at 500–800 kHz with tight duty-cycle control.

Use Value: 3 mΩ R_DS(on) at 4.5 V reduces conduction loss by 35% vs. legacy 5 mΩ devices, improving full-load efficiency by ~1.2%.

Use Scenario: Dual-phase 3.3 V → 1.0 V conversion feeding discrete graphics memory and core logic in gaming laptops.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery (Q_rr = 20 nC) minimizing reverse recovery loss.

Use Value: 1.5 K/W R_thJC allows 90 W dissipation with 2-layer PCB cooling, eliminating need for external heatsinks.

Point-of-Load DC-DC Converter

Industrial FPGA Core Supply

Use Scenario: Compact 12 V input to 0.85 V/60 A output module for ASIC/FPGA core rails in edge computing modules.

IC Role / Device Role / Timing Role: Main switching FET in interleaved two-phase topology, driven by integrated controller with 4.5 V gate output.

Use Value: Low input capacitance (C_iss = 5.7 nF) reduces gate drive current demand, enabling use of smaller gate resistors and lower EMI.

Use Scenario: Reliable 24 V to 1.2 V/40 A supply for Xilinx Zynq UltraScale+ MPSoC in factory automation controllers.

IC Role / Device Role / Timing Role: High-reliability power switch qualified per JEDEC standards for extended temperature operation (−40 to +125 °C).

Use Value: 135 mJ E_AS withstands repeated short-circuit transients during FPGA configuration, preventing field failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242TRPBF	R_DS(on) = 2.8 mΩ @ 4.5 V; Q_g = 42 nC; SO-8 package with similar thermal pad	Slightly higher R_DS(on) increases conduction loss by ~10% at 30 A; identical 4.5 V drive compatibility	Preferred where Infineon supply chain constraints exist and marginal efficiency loss is acceptable
DMT3006LPS-13	R_DS(on) = 2.3 mΩ @ 4.5 V; Q_g = 51 nC; PowerDI 3333 package with higher R_thJA (60 K/W)	Lower R_DS(on) improves conduction loss but higher Q_g increases switching loss; less effective thermal dissipation	Best suited for space-constrained layouts where board area is prioritized over thermal margin

Compared with IRLHS6242TRPBF and DMT3006LPS-13, BSC025N03MSGATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and superior thermal resistance-making it ideal for thermally demanding, high-current POL applications where both efficiency and reliability are critical.

Availability

BSC025N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU voltage regulation, GPU power delivery modules, and industrial FPGA core supplies requiring stable component supply across production lifecycles.

Supply support for BSC025N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS™3 M-Series targets high-efficiency, high-current DC-DC conversion in portable and embedded systems, emphasizing low-voltage gate drive compatibility, avalanche ruggedness, and JEDEC-qualified reliability for consumer and industrial applications.

FAQ

What is the maximum safe operating temperature for BSC025N03MSGATMA1?

The device supports junction temperatures from −55 °C to +150 °C per IEC 68-1 climatic category 55/150/56. Continuous operation at T_j = 150 °C requires derating ID to ≤85 A (V_GS = 10 V) or ≤76 A (V_GS = 4.5 V), as shown in Figure 2 of the datasheet. PCB layout with ≥6 cm² copper area is mandatory to sustain this rating.

Can BSC025N03MSGATMA1 be used as a synchronous rectifier in a 30 V input buck converter?

Yes-it is explicitly qualified for synchronous rectification with a body diode V_SD of 0.82–1.1 V at 30 A and Q_rr of 20 nC. Its low R_DS(on) ensures lower forward drop than Schottky diodes above ~3 A, and its fast recovery avoids cross-conduction losses when paired with a properly timed gate driver.

Is BSC025N03MSGATMA1 RoHS and halogen-free compliant?

Yes-the device uses Pb-free plating and meets RoHS Directive 2011/65/EU requirements. It is also halogen-free per IEC 61249-2-21, with chlorine and bromine content below 900 ppm each and total halogens below 1500 ppm, verified through material declaration and supplier test reports.

Does BSC025N03MSGATMA1 require a gate resistor for stability?

A gate resistor (R_G) of 1–5 Ω is recommended to dampen gate oscillation and limit peak gate current. The datasheet specifies t_d(on) and t_r using R_G = 1 Ω; increasing R_G slows switching but reduces EMI and shoot-through risk in high-side configurations. Layout must minimize gate loop inductance regardless of R_G value.

BSC025N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta). 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC025N03MSGATMA1 FAQ

1.How can I place an order for BSC025N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC025N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC025N03MSGATMA1 reliable?

The price and inventory of BSC025N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC025N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC025N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC025N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC025N03MSGATMA1?

BSC025N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC025N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC025N03MSGATMA1?

For technical support, including BSC025N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC025N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC025N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC025N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC025N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC025N03MSGATMA1?

All BSC025N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC025N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC025N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC025N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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