Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC027N03S G

Name: BSC027N03S G
Brand: Infineon Technologies
SKU: BSC027N03S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSC027N03S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC027N03S G.pdf

Description:: MOSFET N-CH 30V 25A/100A TDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,728

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSC027N03S G from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET optimized for high-efficiency DC/DC converters in notebook power supplies, featuring 30 V V_DS, 2.7 mΩ R_DS(on) at 10 V_GS, 100 A continuous drain current at T_C=25 °C, and avalanche-rated ruggedness for reliable operation under transient stress.

For engineers reviewing the BSC027N03S G datasheet, BSC027N03S G pinout, BSC027N03S G application, or BSC027N03S G equivalent, this device supports high-frequency synchronous rectification, low-voltage logic-level gate drive compatibility, and thermally demanding point-of-load (POL) converter designs requiring minimal conduction loss and fast switching.

Technical Context

This OptiMOS™2 power transistor uses trench-gate technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FOM), enabling high efficiency in 30 V-class synchronous buck converters operating up to 1 MHz. Its 4.5 V gate threshold (V_GS(th) = 1.2–2.0 V) ensures robust turn-on with standard 5 V or 3.3 V controllers.

The device integrates an optimized body diode with Q_rr = 18 nC and V_SD = 0.83–1.0 V at I_F = 50 A, supporting efficient reverse recovery in high-side switch configurations and reducing dead-time losses in synchronous topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V system buses
R_DS(on) max	2.7 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 50 A, critical for POL thermal management
I_D continuous	100 A @ T_C = 25 °C - Supports high-current CPU/GPU VRMs without parallel devices
Q_g total	38–51 nC - Low gate charge enables fast switching with moderate gate driver strength (e.g., 1–2 A peak)
E_AS	800 mJ - Avalanche energy rating allows safe operation during inductive load switching transients
R_thJC	1.4 K/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power density layouts
Q_rr	18 nC - Low reverse recovery charge minimizes shoot-through risk and improves light-load efficiency

Pinout & Package

PG-TDSON-8 package: surface-mount, exposed-drain thermal pad, 5 mm × 6 mm footprint, 0.95 mm height, RoHS-compliant lead-free plating.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D1–D5)	Main current path (source of electrons)	Five parallel internal drain terminals connected to exposed copper pad - primary thermal and current path to PCB ground plane
Source (S1–S3)	Reference node for gate control and current return	Three source bond wires tied to source metallization - low-inductance return path for high di/dt switching
Gate (G)	Control electrode for channel formation	Single gate terminal with 1.2 Ω internal gate resistance - limits dV/dt-induced ringing and simplifies gate driver design

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V - fully enhances with 3.3 V or 5 V microcontroller GPIO or PWM controller outputs
Ultra-low FOM (R_DS(on) × Q_g)	~103 mΩ·nC - balances conduction and switching losses for >95% efficiency in 300 kHz–1 MHz SMPS
Avalanche and dv/dt rated	E_AS = 800 mJ; dv/dt = 6 kV/µs - withstands unclamped inductive switching and EMI-rich environments without snubbers
Optimized body diode	Q_rr = 18 nC, V_SD = 0.83 V @ 50 A - reduces reverse recovery loss and enables high-frequency synchronous rectification

Applications

Notebook DC/DC Converters

Server VRMs

Use Scenario: Point-of-load regulation for CPU/GPU core voltage (e.g., 0.8–1.5 V @ 50–100 A).

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side/low-side buck configuration with 300–600 kHz switching frequency.

Use Value: 2.7 mΩ R_DS(on) cuts conduction loss by >40% vs. legacy 5 mΩ MOSFETs, directly improving VRM efficiency and thermal margin.

Use Scenario: High-current 12 V input to 0.9 V output conversion in dual-phase server power stages.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck converter with active current sharing and phase synchronization.

Use Value: 1.4 K/W R_thJC enables direct heatsink attachment, sustaining 90 A continuous current at T_C = 100 °C without derating.

Industrial Motor Drives

Telecom DC/DC Modules

Use Scenario: Half-bridge gate driver stage for 24 V BLDC motor control in factory automation equipment.

IC Role / Device Role / Timing Role: High-speed switching element with integrated body diode for freewheeling current recirculation.

Use Value: 6 kV/µs dv/dt rating prevents false turn-on during fast voltage transitions across motor windings.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom base station power systems.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: Avalanche rating (800 mJ) absorbs leakage inductance energy during transformer reset, eliminating need for external clamp circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.3 mΩ @ 10 V_GS; Q_g = 52 nC; TO-220 package	Larger thermal resistance (R_thJC = 2.5 K/W); through-hole mounting only	Select when board space permits through-hole layout and lower gate drive strength suffices
Si7850DP	R_DS(on) = 2.5 mΩ @ 10 V_GS; Q_g = 48 nC; PowerPAK SO-8 package	Slightly lower R_DS(on) but higher C_iss (7200 pF vs. 6540 pF); no avalanche rating	Select when maximum efficiency is prioritized over ruggedness in controlled environments

Compared with IRL3803PbF and Si7850DP, BSC027N03S G delivers superior thermal performance (1.4 K/W), certified avalanche capability, and optimized FOM for high-frequency notebook VRMs-making it preferred where reliability under transient stress and compact thermal design are critical.

Availability

BSC027N03S G is available at Aetrix Electronics and suitable for notebook power supplies, server VRMs, industrial motor drives, and telecom DC/DC modules requiring stable component supply, long-term lifecycle support, and JEDEC-qualified ruggedness.

Supply support for BSC027N03S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

BSC027N03S G belongs to the OptiMOS™2 family, engineered specifically for high-efficiency, high-current DC/DC conversion in portable computing and enterprise infrastructure applications.

FAQ

What is the maximum gate-source voltage rating for BSC027N03S G?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 0 V to 10 V for optimal R_DS(on) and reliability; 4.5 V ensures full enhancement in logic-level applications.

Is BSC027N03S G suitable for synchronous rectification in a 48 V input buck converter?

No - its 30 V V_DS rating makes it unsuitable for 48 V bus applications. It is designed for ≤24 V input systems like notebooks and server 12 V intermediate buses. For 48 V, consider 60–80 V rated OptiMOS™5 devices such as BSZ0902NS.

Does BSC027N03S G require a gate resistor for stability?

Yes - a 2.7 Ω series gate resistor is recommended per Infineon's evaluation data (Rev. 1.4, Fig. 16). This value suppresses oscillation during fast switching while maintaining acceptable turn-on/turn-off times (t_r = 8–12 ns, t_f = 6–10 ns).

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.83–1.0 V and Q_rr = 18 nC - higher forward drop than Schottky diodes but eliminates extra component count and layout complexity. It is optimized for synchronous operation, not standalone rectification.

BSC027N03S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6540 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC027N03S G FAQ

1.How can I place an order for BSC027N03S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC027N03S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC027N03S G reliable?

The price and inventory of BSC027N03S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC027N03S G is usually 5 days.

3.What payment methods are accepted for BSC027N03S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC027N03S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC027N03S G?

BSC027N03S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC027N03S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC027N03S G?

For technical support, including BSC027N03S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC027N03S G requirements.

6.How does Aetrix verify that BSC027N03S G is sourced from the original manufacturer or authorized distributors?

All BSC027N03S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC027N03S G meets industry standards.

7.What is the process for return or replacement of BSC027N03S G?

All BSC027N03S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC027N03S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC027N03S G part is unused and in its original packaging.

Return procedure for BSC027N03S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.