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Infineon Technologies BSC029N025SG

Part No.:
BSC029N025SG
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixBSC029N025SG.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,999

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Product details

Overview

BSC029N025SG from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET optimized for high-efficiency DC/DC converters in notebook power supplies, featuring 25 V VDS, 2.9 mΩ RDS(on) at VGS = 10 V and 50 A, 78 W Ptot at TC = 25 °C, and avalanche-rated operation up to 680 mJ.

For engineers reviewing the BSC029N025SG datasheet, BSC029N025SG pinout, BSC029N025SG application, or BSC029N025SG equivalent, this device supports high-current synchronous rectification, fast-switching SMPS topologies, and thermally demanding low-voltage power stages where low gate charge × RDS(on) figure-of-merit (FOM) and robust dv/dt immunity are critical.

Technical Context

This OptiMOS™2 power transistor uses trench-based silicon technology to achieve ultra-low on-resistance with fast switching performance. Its gate threshold voltage (1.2–2.0 V typ.) enables direct drive from 3.3 V or 5 V controllers, and its 31–41 nC total gate charge supports efficient operation at >500 kHz switching frequencies.

The device integrates an optimized body diode with 15 nC reverse recovery charge (Qrr) and 0.84–1.0 V forward voltage (VSD) at 50 A, enabling reliable synchronous FET operation in buck converters without external Schottky assistance.

Key Specifications

ParameterValue and Actual Design Meaning
VDS25 V - Maximum drain-source blocking voltage for 3.3 V/5 V input rail applications
RDS(on) max2.9 mΩ at VGS = 10 V, ID = 50 A - Enables <1.5 W conduction loss at 50 A continuous current
Qg total31–41 nC - Supports efficient gate driving with standard 1-A peak drivers at >300 kHz
EAS680 mJ - Rated single-pulse avalanche energy ensures ruggedness during transient overvoltage events
dv/dt rating6 kV/µs - Confirmed immunity to parasitic turn-on in high-speed hard-switched topologies
RthJC1.6 K/W - Low junction-to-case thermal resistance enables direct heatsink mounting for high-power density designs
ID continuous100 A at TC = 25 °C - Sustains high pulsed load currents in CPU/GPU VRMs

Pinout & Package

PG-TDSON-8 (also known as Power-Transistor Dual-Side Cooling Outline, 8-pin), bottom-side thermal pad exposed for direct PCB copper thermal coupling. Package dimensions: 5.15 mm × 6.2 mm × 1.27 mm.

Pin/TerminalCircuit RoleDesign Meaning
1–3, 5–7Drain (internally connected)High-current power path; electrically and thermally tied to exposed bottom pad
4SourceMain source terminal for current return and gate driver reference
8GateControl input; requires low-inductance routing due to 1.2 Ω internal gate resistance
Exposed PadDrain (thermal & electrical)Primary thermal interface; must be soldered to ≥6 cm² copper area per JEDEC standards

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.5 V - compatible with 3.3 V microcontrollers and PWM controllers
Low Qg × RDS(on) FOM~89 nC·mΩ - benchmark efficiency metric for high-frequency synchronous buck stages
Avalanche-rated680 mJ single-pulse EAS - eliminates need for external clamping in inductive load switching
Robust dv/dt immunity6 kV/µs rated - prevents false turn-on in high dV/dt environments like multiphase VRMs
Halogen-free & RoHSCompliant with IEC61249-2-21 and EU RoHS Directive 2011/65/EU - suitable for consumer and computing end equipment

Applications

Notebook CPU Voltage RegulatorGPU Core Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD mobile CPUs under dynamic load transients up to 100 A/µs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in high-side/low-side pair; switches at 300–600 kHz with precise dead-time control.

Use Value: 2.9 mΩ RDS(on) reduces conduction loss by >35% vs. legacy 4.5 mΩ devices, directly improving VR efficiency and thermal margin.

Use Scenario: Compact dual-phase VR delivering 0.9–1.2 V at up to 120 A peak to discrete laptop GPUs during gaming workloads.

IC Role / Device Role / Timing Role: Low-side synchronous FET with fast body diode recovery (Qrr = 15 nC) to minimize shoot-through risk and reverse recovery loss.

Use Value: 6 kV/µs dv/dt rating ensures stable gate bias during rapid VDS transitions, eliminating spurious turn-on in dense PCB layouts.

USB-C PD Fast ChargingServer DDR5 Memory Regulator

Use Scenario: 20 V input to 5–20 V programmable output buck-boost stage in portable USB-C PD adapters supporting 100 W delivery.

IC Role / Device Role / Timing Role: Primary switching FET operating in continuous conduction mode (CCM) with 500 kHz–1 MHz switching frequency.

Use Value: 31–41 nC Qg enables minimal gate drive loss while maintaining <10 ns rise/fall times, critical for ZVS-assisted topologies.

Use Scenario: Point-of-load (POL) regulator supplying 1.1 V ±3% to DDR5 memory modules with tight transient response requirements (±50 mV @ 10 A/µs).

IC Role / Device Role / Timing Role: High-current low-side FET in 3+1 phase interleaved buck converter with integrated power stage controller.

Use Value: 1.6 K/W RthJC allows direct thermal coupling to heatsink, sustaining 81 A at TC = 100 °C without derating in constrained 1U server chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLHS6242PBFRDS(on) = 3.2 mΩ @ 4.5 V; Qg = 35 nC; PG-TSDSON-8 packageSlightly higher RDS(on) and lower avalanche rating (EAS = 420 mJ)Preferred where gate drive voltage is limited to 4.5 V and avalanche stress is minimal
SI7157DP-T1-GE3RDS(on) = 2.7 mΩ @ 10 V; Qg = 48 nC; PowerPAK® SO-8 packageHigher gate charge increases driver loss; no official dv/dt rating publishedSelected when lowest possible RDS(on) is prioritized over switching speed and ruggedness

Compared with IRLHS6242PBF and SI7157DP-T1-GE3, BSC029N025SG delivers superior FOM (89 vs. 112 and 129 nC·mΩ), verified 6 kV/µs dv/dt immunity, and JEDEC-qualified reliability for notebook-grade power conversion - making it optimal for high-reliability, high-frequency VRMs.

Availability

BSC029N025SG is available at Aetrix Electronics and suitable for notebook CPU VRMs, GPU power delivery systems, and USB-C PD fast chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSC029N025SG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

BSC029N025SG belongs to the OptiMOS™2 family, engineered specifically for high-efficiency, high-current DC/DC conversion in space-constrained computing and portable electronics applications.

FAQ

What is the maximum continuous drain current at TC = 100 °C?

The BSC029N025SG supports 81 A continuous drain current at case temperature of 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with ≥6 cm² copper area and vertical mounting in still air per JEDEC test conditions.

Is the body diode suitable for synchronous rectification without external Schottky assistance?

Yes - the integrated body diode has 15 nC reverse recovery charge (Qrr) and 0.84–1.0 V forward voltage at 50 A, enabling reliable synchronous operation in buck converters up to 600 kHz without external diode parallelization or snubbing.

Does BSC029N025SG require a gate resistor for stability?

A gate resistor of 1–5 Ω is recommended to dampen ringing and control switching speed. The device's 1.2 Ω internal gate resistance provides partial damping, but external series resistance improves EMI performance and reduces overshoot in high-di/dt applications like multiphase VRMs.

What is the thermal resistance from junction to ambient under minimal footprint conditions?

Under minimal footprint conditions (no added copper), RthJA is 62 K/W. With 6 cm² PCB copper area per JEDEC standards, RthJA improves to 45 K/W - a value confirmed in the Thermal Characteristics section of the datasheet (Rev. 1.4, page 2).

BSC029N025SG Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5090 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.8W (Ta), 78W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-1

BSC029N025SG FAQ

1.How can I place an order for BSC029N025SG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC029N025SG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC029N025SG reliable?

The price and inventory of BSC029N025SG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC029N025SG is usually 5 days.

3.What payment methods are accepted for BSC029N025SG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC029N025SG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC029N025SG?

BSC029N025SG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC029N025SG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC029N025SG?

For technical support, including BSC029N025SG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC029N025SG requirements.

6.How does Aetrix verify that BSC029N025SG is sourced from the original manufacturer or authorized distributors?

All BSC029N025SG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC029N025SG meets industry standards.

7.What is the process for return or replacement of BSC029N025SG?

All BSC029N025SG units undergo pre-shipment inspection (PSI). If there is an issue with BSC029N025SG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC029N025SG part is unused and in its original packaging.

Return procedure for BSC029N025SG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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