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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC029N025S G

Name: BSC029N025S G
Brand: Infineon Technologies
SKU: BSC029N025S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC029N025S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC029N025S G.pdf

Description:: MOSFET N-CH 25V 24A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC029N025S G from Infineon Technologies is a logic-level N-channel OptiMOS®2 power MOSFET optimized for high-efficiency notebook DC/DC converters and synchronous rectification in SMPS. It delivers 2.9 mΩ R_DS(on) at V_GS = 10 V, 100 A continuous drain current at T_C = 25 °C, and avalanche-rated ruggedness for reliable operation in hard-switching topologies.

For engineers reviewing the BSC029N025S G datasheet, BSC029N025S G pinout, BSC029N025S G application, or BSC029N025S G equivalent, key selection criteria include its 2.9 mΩ on-resistance, 31–41 nC total gate charge, 6 kV/µs dv/dt rating, and PG-TDSON-8 package thermal performance with R_thJC = 1.6 K/W (bottom).

Technical Context

This MOSFET employs Infineon's OptiMOS®2 trench technology to minimize conduction and switching losses simultaneously. Its low Q_g × R_DS(on) figure-of-merit (FOM) enables high-frequency operation up to several hundred kHz in buck converters while maintaining low gate drive loss.

The device integrates an optimized body diode with 15 nC reverse recovery charge (Q_rr) and 0.84–1.0 V forward voltage (V_SD) at 50 A, supporting efficient synchronous FET operation and reducing dead-time losses in dual-phase topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12–24 V input rail systems and 5 V/3.3 V output stages
R_DS(on), max	2.9 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 50 A, critical for high-current CPU/GPU VRMs
I_D, cont	100 A at T_C = 25 °C - Supports high-density power delivery in compact notebook motherboard layouts
Q_g, total	31–41 nC - Low gate charge reduces driver power and allows use of low-cost gate drivers in multi-phase designs
R_thJC	1.6 K/W (bottom side) - Enables direct heatsink mounting for thermal management in space-constrained applications
E_AS	680 mJ - Avalanche energy rating ensures robustness against inductive switching transients without external snubbers
dv/dt rating	6 kV/µs - Confirmed immunity to parasitic turn-on in fast-switching synchronous buck converters

Pinout & Package

Package: PG-TDSON-8 (Power-Transistor Dual-Side Cooling Outline), 5 mm × 6 mm footprint, exposed drain pad on bottom side for enhanced thermal transfer. Compatible with standard reflow profiles per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Internally paralleled source terminals; low-inductance connection to ground plane required for EMI control
4, 8	Gate (G)	Dual gate pads reduce gate loop inductance and improve switching consistency across parallel devices
Drain Pad (Bottom)	Drain (D)	Exposed copper drain pad occupies >80% of package underside; must be soldered to large PCB copper area for R_thJA ≤ 45 K/W

Key Features

Feature	Design Value
Optimized Q_g × R_DS(on) FOM	Enables >95% efficiency in 5 V-out, 50 A buck converters operating at 300–500 kHz
Avalanche-rated operation	Guarantees single-pulse ruggedness up to 680 mJ without derating, eliminating need for external clamping in VRM designs
Logic-level gate drive	Full enhancement at V_GS ≥ 4.5 V supports direct interfacing with PWM controllers and microcontroller GPIOs
Low R_thJC (1.6 K/W)	Allows thermal path from junction to heatsink via bottom-side cooling, enabling >75 W power handling in 10 mm² board area

Applications

High-Efficiency Notebook VRM

Synchronous Buck Converter

Use Scenario: Core voltage regulation for Intel Core i7/i9 or AMD Ryzen mobile processors requiring dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: High-side synchronous FET in multiphase buck converter; switches at 300–600 kHz with precise dead-time control.

Use Value: 2.9 mΩ R_DS(on) and 31–41 nC Q_g jointly reduce both conduction and switching losses, enabling >94% peak efficiency at 5 V/60 A.

Use Scenario: Point-of-load (POL) regulator on server motherboard delivering 3.3 V/40 A to FPGA I/O banks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; leverages low V_SD (0.84 V) and fast Q_rr (15 nC) to minimize reverse recovery loss.

Use Value: Body diode performance eliminates need for external Schottky catch diodes, reducing BOM count and layout area by 30%.

DC/DC Converter for SSD Power

Industrial 24 V Input Buck Regulator

Use Scenario: 12 V-to-3.3 V conversion for NVMe SSD controller and NAND flash, operating in thermally constrained M.2 form factor.

IC Role / Device Role / Timing Role: Primary switching FET in monolithic or discrete buck stage; rated for 100% duty cycle with thermal derating.

Use Value: R_thJC = 1.6 K/W enables direct thermal coupling to SSD metal shield, sustaining 40 A continuous without active cooling.

Use Scenario: 24 V industrial input converted to 5 V/20 A for PLC I/O modules with wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role / Timing Role: Main power switch in isolated or non-isolated buck; qualified to JEDEC JESD22-A108 for 150 °C T_j operation.

Use Value: Guaranteed R_DS(on) drift <20% from −55 to +150 °C ensures stable current sharing in parallel configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 3.2 mΩ @ 4.5 V; Q_g = 27 nC; SO-8 package; no bottom-side thermal pad	Limited to <40 A continuous due to higher R_thJA (62 K/W); unsuitable for >50 A VRMs	Prefer where board space permits larger footprint and thermal budget allows SO-8 mounting
DMT6009LSD	R_DS(on) = 3.0 mΩ @ 4.5 V; Q_g = 35 nC; 5×6 mm TSDSON package; R_thJC = 2.0 K/W	Higher thermal resistance reduces power density capability by ~15% vs. BSC029N025S G in same PCB layout	Acceptable for cost-sensitive designs where 10–15% lower current density is acceptable

Compared with IRLHS6242PBF and DMT6009LSD, BSC029N025S G offers superior thermal performance (R_thJC = 1.6 K/W), lower R_DS(on), and JEDEC-qualified reliability-making it the preferred choice for high-current, high-density notebook and server VRMs demanding long-term stability under thermal cycling.

Availability

BSC029N025S G is available at Aetrix Electronics and suitable for notebook VRMs, server point-of-load regulators, and industrial 24 V DC/DC converters requiring stable component supply, long-lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for BSC029N025S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The OptiMOS®2 product line targets high-efficiency, high-current DC/DC conversion in computing and communications, emphasizing low R_DS(on), fast switching, and ruggedness for synchronous rectification and multiphase VRMs.

FAQ

Is BSC029N025S G suitable for synchronous rectification in a 5 V output buck converter?

Yes. With a typical V_SD of 0.84 V at 50 A and Q_rr of 15 nC, it outperforms external Schottky diodes in forward conduction loss and reverse recovery behavior. Its logic-level gate threshold (1.2–2.0 V) ensures full enhancement using standard 5 V gate drive, making it ideal for low-voltage synchronous rectification.

What is the maximum recommended PCB copper area for optimal thermal performance?

For R_thJA = 45 K/W, the datasheet specifies a 6 cm² (e.g., 40 mm × 40 mm) single-layer 70 µm copper area connected to the drain pad. Larger copper areas further reduce R_thJA; however, minimum 6 cm² is required to meet the rated 24 A at T_A = 25 °C under still-air conditions.

Does BSC029N025S G require a gate resistor for safe operation?

A gate resistor (typically 1–5 Ω) is recommended to dampen ringing and control dV/dt during switching. While not mandatory for basic functionality, omitting it risks overshoot, shoot-through in half-bridges, and EMI compliance failure-especially given its 6 kV/µs dv/dt rating and low gate impedance.

Can BSC029N025S G be used in parallel configurations?

Yes. Its positive temperature coefficient for R_DS(on) ensures inherent current sharing across paralleled devices. Layout symmetry (matched gate and source paths) and individual gate resistors are required. Derating to 80–85% of total rated current is advised to maintain thermal balance and reliability.

BSC029N025S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5090 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC029N025S G FAQ

1.How can I place an order for BSC029N025S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC029N025S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC029N025S G reliable?

The price and inventory of BSC029N025S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC029N025S G is usually 5 days.

3.What payment methods are accepted for BSC029N025S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC029N025S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC029N025S G?

BSC029N025S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC029N025S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC029N025S G?

For technical support, including BSC029N025S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC029N025S G requirements.

6.How does Aetrix verify that BSC029N025S G is sourced from the original manufacturer or authorized distributors?

All BSC029N025S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC029N025S G meets industry standards.

7.What is the process for return or replacement of BSC029N025S G?

All BSC029N025S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC029N025S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC029N025S G part is unused and in its original packaging.

Return procedure for BSC029N025S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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