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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC0302LSATMA1

Name: BSC0302LSATMA1
Brand: Infineon Technologies
SKU: BSC0302LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC0302LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC0302LSATMA1.pdf

Description:: MOSFET N-CH 120V 12A/99A TDSON

Quantity:: RFQ Add To RFQ list

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Inventory:5,017

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Product details

Overview

BSC0302LSATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TDSON-8 package, rated for 120 V V_DS, 8.0 mΩ R_DS(on) at V_GS = 10 V, 99 A continuous drain current, and 150 °C operation - optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the BSC0302LSATMA1 datasheet, BSC0302LSATMA1 pinout, BSC0302LSATMA1 application, or BSC0302LSATMA1 equivalent, key selection criteria include gate charge (Q_g = 79 nC), output charge (Q_oss = 79 nC), avalanche ruggedness (E_AS = 377 mJ), thermal resistance (R_thJC = 0.45 °C/W), and internal body diode performance (V_SD = 0.88 V @ 50 A).

Technical Context

This OptiMOSTM 3 device uses trench-gate silicon technology to achieve low R_DS(on) × Q_g figure-of-merit (FOM) and fast switching with t_r = 9 ns and t_f = 13 ns under 10 V drive. Its gate threshold voltage (V_GS(th) = 1.2–2.4 V) ensures reliable turn-on with standard logic-level controllers.

The integrated body diode supports synchronous rectification with t_rr = 107 ns and Q_rr = 220 nC, while JEDEC-qualified reliability and 100% avalanche testing confirm robustness in inductive load switching and overvoltage transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V and 60 V bus systems with margin for voltage spikes in industrial and automotive power stages.
R_DS(on), max	8.0 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 50 A, critical for high-efficiency 100+ W DC-DC stages.
I_D, cont	99 A @ T_C = 25 °C - delivers high current density in compact surface-mount layouts using bottom-side thermal pad.
Q_g	79 nC - determines gate driver power requirement and switching loss trade-off in 100–500 kHz applications.
E_AS	377 mJ - withstands single-pulse inductive energy without failure, enabling robust motor gate-drive and flyback snubber design.
R_thJC	0.45 °C/W - allows >150 W power dissipation with minimal junction-to-case temperature rise when mounted on copper heatsink.
V_SD	0.88 V @ I_F = 50 A - reduces reverse conduction loss in synchronous buck topologies versus external Schottky diodes.

Pinout & Package

PG-TDSON-8 package with exposed thermal pad on underside; pins 1–3 and pin 5–8 are source and drain terminals respectively, pin 4 is gate, and pin 5–8 share common drain connection for parallel current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node for internal MOSFET cells; connects to PCB ground plane for low-inductance return path.
4	Gate	Control input requiring <79 nC charge; sensitive to ESD but compatible with 3.3 V/5 V logic drivers due to 1.2–2.4 V V_GS(th).
5, 6, 7, 8	Drain	High-current drain node shared across four terminals; designed for direct connection to high-side switch node or bus rail.

Key Features

Feature	Design Value
N-channel logic-level operation	Turns fully on with 4.5 V gate drive (R_DS(on) ≤ 9.5 mΩ), eliminating need for gate boosters in 5 V microcontroller-based designs.
100% avalanche tested	Guarantees single-pulse ruggedness up to 377 mJ, enabling use in unclamped inductive switching without external protection.
Low Q_g × R_DS(on) FOM	Optimizes trade-off between switching speed and conduction loss - critical for efficiency in 300–1000 kHz SMPS designs.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive, supporting environmentally compliant industrial and consumer product certifications.
150 °C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs) without derating.

Applications

Server VRM Power Stage

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in 1U server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase VRM, switching at 600 kHz with 50 A per phase.

Use Value: 8.0 mΩ R_DS(on) and 0.45 °C/W R_thJC minimize conduction loss and thermal stress, enabling >95% efficiency at full load.

Use Scenario: 24–48 V BLDC motor control in factory automation actuators with space-constrained PCB layout.

IC Role / Device Role / Timing Role: High-side and low-side switch in half-bridge configuration, driven by isolated gate drivers.

Use Value: 120 V rating and 377 mJ E_AS tolerate back-EMF spikes during commutation; logic-level gate enables direct MCU interface.

Telecom DC-DC Brick

EV Onboard Charger Auxiliary Supply

Use Scenario: Isolated forward or LLC resonant converter in 48 V telecom power modules delivering 200–500 W.

IC Role / Device Role / Timing Role: Primary-side switch operating at 300–500 kHz with zero-voltage switching (ZVS) assist.

Use Value: Low C_oss (590–770 pF) and Q_oss (79 nC) reduce ZVS dead-time losses and improve light-load efficiency.

Use Scenario: Auxiliary 12 V supply derived from 400 V battery in EV onboard chargers, operating continuously at elevated ambient temperatures.

IC Role / Device Role / Timing Role: Main switch in non-isolated buck converter powering control logic and sensors.

Use Value: 150 °C T_j(max) and halogen-free construction meet automotive AEC-Q101-012 thermal and environmental requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 3.5 mΩ @ 10 V, but V_DS = 100 V - lower conduction loss but reduced voltage margin for 48 V systems with transients.	Suitable for 24–36 V applications only; not recommended where 120 V surge immunity is required.	Select when board space is constrained and voltage margin is secondary to ultra-low R_DS(on).
IXTP110N10L2	TO-220 package, R_DS(on) = 9.2 mΩ @ 10 V, Q_g = 85 nC - higher gate charge and larger footprint than PG-TDSON-8.	Requires through-hole assembly and external heatsinking; less suitable for high-density SMT designs.	Prefer for prototyping or low-volume builds where thermal management flexibility outweighs size constraints.

Compared with STL220N10F7 and IXTP110N10L2, BSC0302LSATMA1 uniquely balances 120 V rating, 8.0 mΩ R_DS(on), and 79 nC Q_g in a thermally enhanced surface-mount package - making it optimal for production-grade, high-power-density 48 V industrial and telecom power stages.

Availability

BSC0302LSATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and EV auxiliary supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for BSC0302LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BSC0302LSATMA1 belongs to the OptiMOSTM 3 family - engineered for high-efficiency, high-frequency power conversion in space-constrained industrial and communications infrastructure.

FAQ

What is the maximum continuous drain current for BSC0302LSATMA1 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 77 A, as specified in Table 2 of the datasheet under "Continuous drain current" with V_GS = 10 V. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures.

Does BSC0302LSATMA1 have an integrated body diode, and what is its forward voltage?

Yes, it includes an internal body diode with V_SD = 0.88 V typical at I_F = 50 A and T_j = 25 °C, as listed in Table 7. This diode supports synchronous rectification and freewheeling in half-bridge and buck configurations.

Can BSC0302LSATMA1 be driven directly by a 3.3 V microcontroller GPIO?

No - while it is a logic-level MOSFET, its minimum V_GS(th) is 1.2 V and typical turn-on occurs above 2.4 V; full enhancement requires ≥4.5 V. A 3.3 V GPIO may partially turn it on, causing excessive R_DS(on) and thermal risk. A level-shifting gate driver is recommended.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

Per Diagram 3, at t_p = 100 µs and T_C = 25 °C, the SOA limits drain current to ~120 A at V_DS = 20 V and ~40 A at V_DS = 80 V. This defines maximum pulsed current under transient conditions without thermal runaway or second breakdown.

BSC0302LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 2

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 112µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7400 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-7

BSC0302LSATMA1 FAQ

1.How can I place an order for BSC0302LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0302LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0302LSATMA1 reliable?

The price and inventory of BSC0302LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0302LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0302LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0302LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0302LSATMA1?

BSC0302LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0302LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0302LSATMA1?

For technical support, including BSC0302LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0302LSATMA1 requirements.

6.How does Aetrix verify that BSC0302LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0302LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0302LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0302LSATMA1?

All BSC0302LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0302LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0302LSATMA1 part is unused and in its original packaging.

Return procedure for BSC0302LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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