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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC0303LSATMA1

Name: BSC0303LSATMA1
Brand: Infineon Technologies
SKU: BSC0303LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC0303LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC0303LSATMA1.pdf

Description:: TRENCH >=100V PG-TDSON-8

Quantity:: RFQ Add To RFQ list

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Inventory:4,898

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Product details

Overview

BSC0303LSATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in SuperSO8 (PG-TDSON-8) package, rated for 120 V V_DS, 12 mΩ max R_DS(on) at V_GS = 10 V, 68 A continuous drain current, and 150 °C operation-designed for high-frequency switching and synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the BSC0303LSATMA1 datasheet, BSC0303LSATMA1 pinout, BSC0303LSATMA1 application, or BSC0303LSATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (51 nC Q_G, 12 mΩ), internal body diode with 85 ns t_rr, and thermal resistance of 0.64 °C/W (junction-to-case, bottom side).

Technical Context

This OptiMOSTM 3 device uses trench-gate silicon technology optimized for fast switching and low conduction loss. Its gate threshold voltage (1.2–2.4 V) ensures reliable turn-on with 3.3 V/5 V logic drivers, and the 0.64 °C/W R_thJC enables high-power density mounting on PCB copper pads.

The MOSFET integrates a robust body diode with 220 nC Q_rr and 0.87 V typical V_SD at 34 A, supporting efficient synchronous rectification. Dynamic parameters-including 3700 pF C_iss, 380 pF C_oss, and 19 pF Cr_ss-are specified at 60 V V_DS, enabling accurate hard-switching loss modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Maximum blocking voltage before avalanche onset; supports 48 V and 60 V bus systems with margin.
R_DS(on), max	12 mΩ at V_GS = 10 V, I_D = 34 A - Enables ≤0.4 W conduction loss at 60 A, critical for thermally constrained layouts.
Q_G	51 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers (e.g., 1–2 A peak).
t_r/t_f	5 ns / 6 ns - Fast switching transitions reduce overlap loss in hard-switched topologies like buck converters.
R_thJC	0.64 °C/W (bottom side) - Allows direct thermal coupling to heatsink or large copper pour; enables >100 W dissipation at ΔT = 65 °C.
V_GS(th)	1.2–2.4 V - Ensures full enhancement with 3.3 V microcontroller GPIOs without level-shifting circuitry.
Q_rr	220 nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous rectifier configurations.

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), surface-mount, exposed drain pad (pins 5–8), lead-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Common return path for load current; internally tied to substrate; connects to ground plane for low-inductance routing.
4	Gate	Control input; requires <1 Ω series resistance near driver to damp ringing due to 0.7 Ω intrinsic gate resistance.
5–8	Drain	Main power output node; electrically and thermally connected to exposed copper pad; must be soldered to ≥6 cm² copper area.

Key Features

Feature	Design Value
N-channel logic-level operation	Turns fully on with 4.5 V gate drive (R_DS(on) ≤ 14.2 mΩ), eliminating need for gate boosters in 5 V or 3.3 V control systems.
100% avalanche tested	Guarantees single-pulse avalanche energy rating of 155 mJ (I_D = 50 A), enabling robustness against inductive switching transients.
Optimized FOM (Q_G × R_DS(on))	51 nC × 12 mΩ = 612 pC·Ω - Balances switching speed and conduction loss for high-efficiency SMPS designs above 200 kHz.
Integrated body diode	85 ns t_rr and 0.87 V V_SD at 34 A - Supports synchronous rectification in buck, flyback, and half-bridge topologies without external diode.

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-current, high-frequency buck converter supplying core voltage to Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500–1000 kHz with tight duty-cycle control.

Use Value: 12 mΩ R_DS(on) and 5 ns rise time minimize conduction + switching losses, enabling >95% efficiency at 100 A output.

Use Scenario: 3-phase inverter driving 1–3 kW permanent-magnet motors in CNC spindles or pumps.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module replacement, driven by isolated gate drivers.

Use Value: 150 °C T_j rating and 0.64 °C/W R_thJC sustain continuous 68 A operation under forced-air cooling with minimal derating.

Telecom 48 V DC-DC Converter

Automotive On-Board Charger (OBC) Auxiliary Supply

Use Scenario: Isolated forward or active-clamp forward converter converting 48 V telecom bus to 12 V/5 V system rails.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier replacing Schottky diodes to improve light-load efficiency.

Use Value: 220 nC Q_rr and 85 ns t_rr suppress reverse recovery spikes, reducing EMI filter size and cost.

Use Scenario: Auxiliary 12 V supply derived from high-voltage battery (400–800 V) via flyback or resonant converter in EV OBC units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier handling up to 30 A continuous output with 120 V isolation barrier.

Use Value: 120 V V_DS rating provides sufficient margin over reflected 12 V output voltage, ensuring long-term reliability under surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V V_DS, 2.2 mΩ R_DS(on), 220 A I_D, H2PAK-7 package - lower R_DS(on) but higher Q_G (120 nC) and larger footprint.	Better suited for ultra-high-current industrial inverters; less optimal for space-constrained telecom VRMs.	Select when thermal budget allows larger package and lowest possible conduction loss dominates design priority.
IXTP50N10L2	100 V V_DS, 10 mΩ R_DS(on), TO-220 package - no integrated body diode, higher R_thJA (62 °C/W), not logic-level (V_GS(th) = 2–4 V).	Requires gate driver with ≥10 V output; unsuitable for 3.3 V MCU direct drive or synchronous rectification.	Prefer only in legacy through-hole designs where board real estate is abundant and gate drive voltage is ≥10 V.

Compared with STL220N10F7 and IXTP50N10L2, BSC0303LSATMA1 delivers superior gate-drive compatibility (logic-level), compact SuperSO8 footprint, and balanced Q_G/R_DS(on) for high-frequency DC-DC stages-making it optimal for modern high-density power supplies where layout area and driver simplicity are critical.

Availability

BSC0303LSATMA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial BLDC motor inverters, telecom 48 V DC-DC converters, and automotive on-board charger auxiliary supplies requiring stable component supply and JEDEC-qualified reliability.

Supply support for BSC0303LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSC0303LSATMA1 belongs to the OptiMOSTM 3 family-engineered for high-efficiency, high-frequency power conversion in data center, industrial, and automotive applications where low R_DS(on), fast switching, and thermal performance are essential.

FAQ

Is BSC0303LSATMA1 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.2–2.4 V and guaranteed R_DS(on) ≤ 14.2 mΩ at V_GS = 4.5 V, it fully enhances using standard 3.3 V GPIO outputs. No level shifter is required, though a 1–2 Ω series gate resistor is recommended to suppress oscillation.

What is the maximum continuous drain current at 100 °C case temperature?

Per Table 2, the continuous drain current is 53 A at T_C = 100 °C and V_GS = 10 V. This derating reflects thermal limits-not electrical degradation-and assumes proper PCB copper area (≥6 cm²) and airflow per datasheet condition.

Does BSC0303LSATMA1 have an integrated body diode, and is it suitable for synchronous rectification?

Yes. It includes an internal body diode with 85 ns reverse recovery time, 220 nC Q_rr, and 0.87 V forward voltage at 34 A. These parameters are explicitly characterized and validated for synchronous rectifier use in buck, flyback, and LLC topologies.

How does the SuperSO8 package affect thermal performance compared to DSO-8 or SO-8?

The SuperSO8 (PG-TDSON-8) features an exposed drain pad on the bottom side, achieving 0.64 °C/W junction-to-case (bottom) thermal resistance-over 10× better than standard SO-8. This requires soldering the pad to ≥6 cm² copper area for optimal heat transfer, unlike non-exposed packages.

BSC0303LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 72µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4900 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

BSC0303LSATMA1 FAQ

1.How can I place an order for BSC0303LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0303LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0303LSATMA1 reliable?

The price and inventory of BSC0303LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0303LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0303LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0303LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0303LSATMA1?

BSC0303LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0303LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0303LSATMA1?

For technical support, including BSC0303LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0303LSATMA1 requirements.

6.How does Aetrix verify that BSC0303LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0303LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0303LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0303LSATMA1?

All BSC0303LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0303LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0303LSATMA1 part is unused and in its original packaging.

Return procedure for BSC0303LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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