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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC030N10NS5SCATMA1

Name: BSC030N10NS5SCATMA1
Brand: Infineon Technologies
SKU: BSC030N10NS5SCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC030N10NS5SCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: BSC030N10NS5SCATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC030N10NS5SCATMA1 from Infineon is an N-channel 100 V OptiMOS™ 5 power MOSFET in PG-WSON-8 package, rated for 171 A continuous drain current at T_C = 25 °C, with R_DS(on) = 3.0 mΩ (max) at V_GS = 10 V, and qualified for industrial applications up to 175 °C junction temperature. It enables high-efficiency synchronous rectification and motor drive stages in server power supplies and industrial inverters.

For engineers reviewing the BSC030N10NS5SCATMA1 datasheet, BSC030N10NS5SCATMA1 pinout, BSC030N10NS5SCATMA1 application, or BSC030N10NS5SCATMA1 equivalent, key selection criteria include dual-side cooling capability, ultra-low R_DS(on), 100% avalanche ruggedness, and thermal resistance as low as 0.36 °C/W (junction-to-case top).

Technical Context

This device implements a trench-based silicon MOSFET architecture optimized for high-current, low-voltage switching in DC-DC converters and motor control H-bridges. Its gate charge profile features Q_g = 70 nC (typ), Q_gd = 21 nC (typ), and Q_oss = 91 nC (typ), supporting fast, low-loss transitions under hard-switching conditions.

The dual-side cooled PG-WSON-8 package integrates exposed drain pads on both top and bottom surfaces, enabling simultaneous thermal path optimization via PCB copper and heatsink contact. Junction-to-case thermal resistance is specified at 0.36 °C/W (top) and 0.5 °C/W (bottom), with full JEDEC JESD47/JESD22 qualification for industrial reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V input bus systems with 20 % derating margin
R_DS(on) max	3.0 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 171 A, critical for high-power density designs
I_D cont	171 A at T_C = 25 °C - Supports single-device implementation in 3 kW server VRMs without paralleling
Q_g	70 nC typ - Balances switching speed and gate driver power requirement in 100–500 kHz operation
T_j max	175 °C - Allows sustained operation in sealed industrial enclosures with limited airflow
Z_thJC top	0.36 °C/W - Enables direct top-side heatsinking for compact, dual-path thermal management
E_AS	398 mJ - Withstands single-pulse inductive energy in motor phase-leg fault conditions

Pinout & Package

PG-WSON-8 (also labeled PG-VSON-8) is a 3.3 mm × 3.3 mm, 0.65 mm height, dual-exposed-pad surface-mount package with wettable flanks. Drain terminals are connected to both top and bottom metal pads for dual-side cooling; no thermal pad solder mask opening required on PCB.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8, top & bottom tabs)	Main current path output / heat dissipation node	Electrically and thermally common; connects directly to PCB power plane and/or external heatsink
Gate (Pin 4)	Control input for channel modulation	Low-impedance input requiring <2.3 Ω series gate resistor to damp ringing in high-dI/dt layouts
Source (Pins 1–3)	Reference node for gate drive and current sensing	Provides Kelvin connection point for accurate R_DS(on)-based current monitoring

Key Features

Feature	Design Value
Dual-side cooling architecture	Enables simultaneous top- and bottom-side thermal extraction, reducing total thermal resistance by up to 40 % vs. standard WSON
100 % avalanche tested	Guarantees robustness against inductive switching transients without external snubbers in motor drives
OptiMOS™ 5 process technology	Delivers 20 % lower R_DS(on) × Q_g figure-of-merit than prior-generation 100 V MOSFETs
175 °C rated junction temperature	Supports operation in harsh environments (e.g., factory automation cabinets) without forced air cooling
Pb-free, halogen-free	Complies with RoHS Directive 2011/65/EU and IEC61249-2-21 for green manufacturing

Applications

Server VRM Phase Legs

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-frequency buck converter in 48 V input server power supply delivering >200 A per phase.

IC Role / Device Role / Timing Role: Synchronous FET in high-side/low-side configuration, switching at 300–500 kHz with precise dead-time control.

Use Value: 3.0 mΩ R_DS(on) and 0.36 °C/W top-side thermal resistance reduce conduction + thermal losses by 22 % versus legacy 100 V MOSFETs.

Use Scenario: 3-phase inverter stage driving 5–10 kW PMSM in CNC machine spindle control.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, handling peak currents >300 A during acceleration.

Use Value: 100 % avalanche rating ensures survival during short-circuit events without desaturation protection circuitry.

Telecom Rectifier Modules

Solar Microinverter DC-Link Switch

Use Scenario: 48 V telecom rectifier with active OR-ing and hot-swap capability in distributed power architecture.

IC Role / Device Role / Timing Role: OR-ing FET operating in linear mode during insertion, then saturated switching during steady-state.

Use Value: Ultra-low R_DS(on) minimizes insertion loss (<15 mV drop at 120 A), improving system efficiency and thermal footprint.

Use Scenario: DC-link switching stage in single-phase microinverter interfacing 600 V PV string to 230 V AC grid.

IC Role / Device Role / Timing Role: Low-side switch in totem-pole PFC or inverter leg, operating with SiC gate driver at 100 kHz.

Use Value: Low Q_gd/Q_g ratio (0.3) reduces Miller-induced shoot-through risk in high-dv/dt environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7AG	R_DS(on) = 2.8 mΩ (typ), Q_g = 82 nC, PG-TSDSON-8 package, no top-side cooling	Lacks dual-side thermal path; requires larger PCB copper area for equivalent thermal performance	Prefer when cost sensitivity outweighs thermal density requirements and top-side heatsinking is unavailable
IXFH180N10P	TO-247-3L package, R_DS(on) = 3.2 mΩ, Q_g = 125 nC, higher parasitic inductance	Through-hole mounting only; unsuitable for high-density, automated SMT production	Select only for legacy designs requiring through-hole compatibility or where mechanical robustness dominates thermal constraints

Compared with STL220N10F7AG and IXFH180N10P, BSC030N10NS5SCATMA1 delivers superior power density via dual-side cooling and lowest R_DS(on) × Q_g FoM, making it optimal for space-constrained, high-reliability industrial and computing power stages.

Availability

BSC030N10NS5SCATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for BSC030N10NS5SCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global wafer fabs and packaging facilities.

This part belongs to the OptiMOS™ 5 family-designed specifically for high-efficiency, high-current DC-DC conversion and motor control in industrial and computing infrastructure where thermal density and avalanche ruggedness are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device is rated for continuous operation up to T_C = 121 °C at I_D = 171 A (V_GS = 10 V), per Table 2 of the datasheet. Derating is required above this temperature; at T_C = 100 °C, maximum continuous current drops to 121 A. Thermal design must ensure case temperature remains within these limits under worst-case ambient and airflow conditions.

Does BSC030N10NS5SCATMA1 support gate drive voltages below 10 V?

Yes-R_DS(on) is specified down to V_GS = 6 V (3.2 mΩ max), enabling use with 5 V or 8 V gate drivers. However, gate threshold voltage ranges from 2.2 V to 3.8 V, so logic-level drive must maintain ≥4.5 V to ensure full enhancement and avoid linear-mode operation during switching transitions.

Is the top-side drain pad electrically isolated from the bottom pad?

No-the top and bottom drain pads are internally shorted and form a single electrical node. Both pads connect to the same drain metallization layer; they are not independent terminals. This unified structure enables true dual-side cooling without isolation concerns or additional routing complexity.

Can this MOSFET replace older OptiMOS™ 4 devices in existing designs?

Yes-pin-compatible with BSC030N10NS4, but requires layout review due to improved thermal performance: top-side cooling capability allows tighter thermal margins, and lower Q_gd reduces gate drive stress. No changes to gate resistor values or driver selection are needed, though efficiency gains may permit reduced heatsink size.

BSC030N10NS5SCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 171A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 115µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WSON-8-2

BSC030N10NS5SCATMA1 FAQ

1.How can I place an order for BSC030N10NS5SCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC030N10NS5SCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC030N10NS5SCATMA1 reliable?

The price and inventory of BSC030N10NS5SCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC030N10NS5SCATMA1 is usually 5 days.

3.What payment methods are accepted for BSC030N10NS5SCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC030N10NS5SCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC030N10NS5SCATMA1?

BSC030N10NS5SCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC030N10NS5SCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC030N10NS5SCATMA1?

For technical support, including BSC030N10NS5SCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC030N10NS5SCATMA1 requirements.

6.How does Aetrix verify that BSC030N10NS5SCATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC030N10NS5SCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC030N10NS5SCATMA1 meets industry standards.

7.What is the process for return or replacement of BSC030N10NS5SCATMA1?

All BSC030N10NS5SCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC030N10NS5SCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC030N10NS5SCATMA1 part is unused and in its original packaging.

Return procedure for BSC030N10NS5SCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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