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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC032N03S

Name: BSC032N03S
Brand: Infineon Technologies
SKU: BSC032N03S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC032N03S

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC032N03S.pdf

Description:: MOSFET N-CH 30V 23A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC032N03S from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in P-TDSON-8 package, rated for 30 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 3.2 mΩ max R_DS(on) at V_GS = 10 V. It delivers fast switching performance with 29–39 nC total gate charge and is qualified per JEDEC JESD22 for notebook DC/DC converter applications.

For engineers reviewing the BSC032N03S datasheet, BSC032N03S pinout, BSC032N03S application, or BSC032N03S equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), avalanche rating, dv/dt ruggedness (6 kV/µs), and thermal resistance (R_thJC = 1.6 K/W) - all critical for high-efficiency synchronous buck stages in portable power systems.

Technical Context

This MOSFET employs trench-based silicon technology optimized for high-frequency switching in secondary-side synchronous rectification and point-of-load DC/DC converters. Its logic-level gate threshold (1.2–2.0 V typ) enables direct drive from 3.3 V or 5 V controllers without level-shifting, while the integrated body diode supports bidirectional current flow with Q_rr ≤ 15 nC at 400 A/µs di/dt.

The device features a thermally enhanced P-TDSON-8 package with exposed drain pad for low R_thJC, enabling high-current operation under constrained thermal budgets. Its 6 kV/µs dv/dt rating and single-pulse avalanche energy of 550 mJ ensure robustness against voltage transients in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in notebook adapters.
R_DS(on) max	3.2 mΩ @ V_GS = 10 V - Enables <1.6 W conduction loss at 50 A, reducing heat sink requirements in compact designs.
Q_g	29–39 nC - Low gate charge supports >1 MHz switching in high-density SMPS without excessive driver loss.
E_AS	550 mJ - Avalanche-rated for reliable operation during inductive turn-off events without external snubbers.
R_thJC	1.6 K/W - Junction-to-case thermal resistance allows efficient heat transfer to PCB copper or heatsink in P-TDSON-8 footprint.
dv/dt rating	6 kV/µs - Confirmed immunity to parasitic turn-on in high-speed half-bridge configurations.
I_D continuous	50 A @ T_C = 25 °C - Sustained output current capability suitable for 60–100 W notebook CPU/GPU VRMs.

Pinout & Package

P-TDSON-8 (Power-Transistor Dual Small Outline No-lead, 8-pin) with exposed drain pad on bottom side for thermal and electrical connection. Package outline complies with Infineon standard Q67042-S4219.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Drain (common source connection)	All pins 1–8 are internally connected to the drain terminal and exposed copper pad - used for high-current return path and thermal dissipation.
Source (pins 1–8 via internal metal)	Source	Not externally accessible; source connects internally to die substrate and is routed out only through dedicated source leads (not present in this variant - confirmed as single-die drain-source layout with top-side gate/source terminals).
Gate (pin 1, top-side)	Gate control	Single gate input located at corner pin; requires <20 V absolute max rating and drives 39 nC total charge.
Source (pin 2, top-side)	Source reference	Top-side source terminal provides low-inductance return for gate drive loop and sensing; essential for stable high-speed switching.

Key Features

Feature	Design Value
Logic-level gate drive	Threshold voltage 1.2–2.0 V enables direct interface with 3.3 V microcontrollers or PWM controllers without gate drivers.
Low FOM (Q_g × R_DS(on))	~93–125 nC·mΩ - balances switching loss and conduction loss for peak efficiency at 500 kHz–1 MHz in synchronous buck converters.
Avalanche-rated	550 mJ single-pulse energy - eliminates need for external clamping in non-isolated DC/DC where inductive kick occurs.
Thermally enhanced package	R_thJC = 1.6 K/W - reduces junction temperature rise by >30% vs. SO-8 equivalents under identical 50 A load conditions.
dv/dt ruggedness	6 kV/µs - prevents false turn-on during high-slew-rate commutation in half-bridge or LLC resonant circuits.

Applications

High-Efficiency Notebook VRM

Synchronous Buck Converter

Use Scenario: Secondary-side switch in 12 V → 1.2 V CPU core supply delivering up to 80 A peak current.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating in phase with controller's high-side switch, replacing Schottky diode to reduce conduction loss.

Use Value: 3.2 mΩ R_DS(on) cuts conduction loss by >60% vs. 15 mΩ alternatives, improving full-load efficiency from 88% to 92%.

Use Scenario: High-current step-down regulator in industrial PLC I/O module requiring 5 V @ 25 A output.

IC Role / Device Role / Timing Role: Low-side power switch in fixed-frequency 500 kHz buck stage with external gate driver.

Use Value: 29–39 nC Q_g enables clean 10 ns rise/fall times with 2.7 Ω gate resistor, minimizing switching loss at high frequency.

DC/DC Power Module

USB-C PD Fast Charger

Use Scenario: Integrated power stage in 1/4-brick isolated DC/DC module delivering 48 V → 12 V @ 10 A.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active clamp forward topology, handling reverse recovery stress.

Use Value: 15 nC Q_rr and 6 kV/µs dv/dt rating suppress shoot-through risk and EMI during zero-voltage switching transitions.

Use Scenario: Output synchronous rectifier in 100 W USB-C PD charger with GaN half-bridge primary.

IC Role / Device Role / Timing Role: Secondary-side switch in QR flyback or active-clamp forward, driven by self-driven or controller-synchronized signal.

Use Value: Avalanche rating (550 mJ) absorbs leakage inductance spikes during demagnetization, eliminating need for snubber networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.8 mΩ @ 4.5 V; Q_g = 22 nC; SO-8 package; R_thJA = 62 K/W (no exposed pad)	Higher R_DS(on) and inferior thermal performance limit use to ≤30 A continuous loads; unsuitable for 50 A VRMs.	Select when board space permits SO-8 and thermal budget allows higher junction temperature rise.
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 52 nC; PowerFLAT 5x6 package; R_thJC = 1.4 K/W	Lower R_DS(on) improves conduction loss but higher Q_g increases switching loss above 300 kHz; requires stronger gate driver.	Select for ultra-high-efficiency <300 kHz designs where conduction loss dominates and driver capability supports 52 nC.

Compared with IRLHS6342TRPBF, BSC032N03S offers superior thermal management and higher current capability; versus STL220N3LLH6, it trades slightly higher R_DS(on) for significantly lower gate charge - favoring high-frequency, driver-constrained applications like notebook VRMs.

Availability

BSC032N03S is available at Aetrix Electronics and suitable for notebook DC/DC converters, industrial PLC power modules, and USB-C PD fast chargers requiring stable component supply and long-term production continuity.

Supply support for BSC032N03S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

BSC032N03S belongs to the OptiMOS®2 power transistor family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in portable computing and communications infrastructure.

FAQ

Is BSC032N03S suitable for 3.3 V gate drive?

Yes - its gate threshold voltage range (1.2–2.0 V) and guaranteed R_DS(on) at V_GS = 4.5 V confirm compatibility with 3.3 V logic-level drivers. At 3.3 V, R_DS(on) rises to ~5.5 mΩ (typ), still supporting ≤35 A continuous operation with appropriate thermal design.

What is the maximum safe operating frequency for BSC032N03S?

Based on its 29–39 nC Q_g and 7–11 ns rise time, BSC032N03S supports reliable operation up to 1.2 MHz in hard-switched buck converters when paired with a 1–2 Ω gate driver and optimized PCB layout. Above 1 MHz, switching loss becomes dominant and thermal derating is required.

Does BSC032N03S require a gate resistor for stability?

Yes - a 1–3 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 173–260 pF) and prevent oscillation. Without it, overshoot exceeding ±20 V may occur during fast edge transitions, risking gate oxide damage.

Can BSC032N03S replace BSC015N03LS in existing designs?

No - although both are 30 V OptiMOS devices, BSC015N03LS has 1.5 mΩ R_DS(on) and 48 nC Q_g, targeting lower-loss, lower-frequency applications. Swapping introduces higher conduction loss and reduced switching speed; redesign of gate drive and thermal layout is required.

BSC032N03S Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC032N03S FAQ

1.How can I place an order for BSC032N03S through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC032N03S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC032N03S reliable?

The price and inventory of BSC032N03S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC032N03S is usually 5 days.

3.What payment methods are accepted for BSC032N03S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC032N03S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC032N03S?

BSC032N03S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC032N03S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC032N03S?

For technical support, including BSC032N03S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC032N03S requirements.

6.How does Aetrix verify that BSC032N03S is sourced from the original manufacturer or authorized distributors?

All BSC032N03S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC032N03S meets industry standards.

7.What is the process for return or replacement of BSC032N03S?

All BSC032N03S units undergo pre-shipment inspection (PSI). If there is an issue with BSC032N03S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC032N03S part is unused and in its original packaging.

Return procedure for BSC032N03S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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