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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC032N03SG

Name: BSC032N03SG
Brand: Infineon Technologies
SKU: BSC032N03SG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC032N03SG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC032N03SG.pdf

Description:: MOSFET N-CH 30V 23A/100A TDSON

Quantity:: RFQ Add To RFQ list

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Inventory:8,888

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Product details

Overview

BSC032N03SG from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET in PG-TDSON-8 package, rated for 30 V V_DS, 3.2 mΩ R_DS(on) at V_GS = 10 V, and 100 A continuous drain current at T_C = 25 °C. It features avalanche rating, dv/dt ruggedness, and optimized figure-of-merit (Q_g × R_DS(on)) for high-efficiency notebook DC/DC converters.

For engineers reviewing the BSC032N03SG datasheet, BSC032N03SG pinout, BSC032N03SG application, or BSC032N03SG equivalent, key selection criteria include its 3.2 mΩ on-resistance at 10 V gate drive, 29–39 nC total gate charge, JEDEC-qualified reliability for computing power stages, and thermal resistance of 1.6 K/W junction-to-case.

Technical Context

This OptiMOS®2 power transistor employs trench-gate superjunction technology to achieve low R_DS(on) and fast switching with controlled EMI. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic-level drivers, and its 6 kV/µs dv/dt rating supports robust operation in hard-switched synchronous buck topologies.

The device integrates an optimized body diode with Q_rr = 15 nC and V_SD = 0.84–1.0 V at 50 A, enabling efficient reverse recovery in high-frequency synchronous rectification. Thermal design is supported by R_thJC = 1.6 K/W and R_thJA = 45 K/W on a 6 cm² PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 5 V–12 V input DC/DC stages
R_DS(on) max	3.2 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1 W conduction loss at 50 A
I_D continuous	100 A at T_C = 25 °C - Supports high-current CPU/GPU VRMs
Q_g total	29–39 nC - Low gate drive power requirement for >1 MHz switching
E_AS	550 mJ - Withstands single-pulse inductive energy without failure
R_thJC	1.6 K/W - Enables direct heatsink mounting for thermal management
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on in high-dI/dt environments

Pinout & Package

PG-TDSON-8 is a thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 1–3 and 5–8 are source; pin 4 is gate; drain connected to bottom thermal pad).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Source	Common low-side return path; electrically and thermally tied to PCB ground plane
4	Gate	Control terminal requiring <39 nC charge for full enhancement; sensitive to ESD
Bottom thermal pad	Drain	Primary high-current drain connection and main heat dissipation path to PCB

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on with 3.3 V or 5 V microcontroller outputs - eliminates level-shifter need
Avalanche-rated	550 mJ single-pulse energy handling - protects against inductive switching transients
Optimized FOM (Q_g × R_DS(on))	~110 nC·mΩ - balances switching loss and conduction loss for 300–1000 kHz operation
Low R_thJA (45 K/W)	Validated on 6 cm² FR4 PCB - enables compact thermal layout without external heatsink
RoHS-compliant Pb-free plating	Meets JEDEC J-STD-20 reflow profile - compatible with lead-free assembly processes

Applications

Laptop CPU Voltage Regulator

Server DDR5 Memory Power Delivery

Use Scenario: High-density 1–2 V, 60–120 A VRM supplying modern mobile CPUs under dynamic load.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) in multiphase buck converter.

Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 5 mΩ devices at 80 A, improving efficiency by ~1.2%.

Use Scenario: Point-of-load regulator delivering 1.1 V @ 40 A to DDR5 memory modules with tight transient response.

IC Role / Device Role / Timing Role: Low-side MOSFET in 500 kHz–1 MHz synchronous buck stage.

Use Value: 29–39 nC Q_g enables fast gate drive with minimal driver loss, supporting <100 ns dead-time control.

USB-C PD Fast Charging Converter

Industrial PLC I/O Power Switching

Use Scenario: 20 V input, 5–20 V output buck-boost converter in 100 W USB-C PD adapters.

IC Role / Device Role / Timing Role: Primary low-side switch in high-frequency resonant or hard-switched topology.

Use Value: 6 kV/µs dv/dt rating prevents false turn-on during ZVS transitions, enhancing reliability.

Use Scenario: 24 V DC input, 5–12 V output power stage for programmable logic controller I/O modules.

IC Role / Device Role / Timing Role: Load switch and overcurrent-protected power rail controller.

Use Value: Avalanche rating and 150 °C T_j,max ensure safe operation during short-circuit fault clearing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.7 mΩ @ 4.5 V; Q_g = 22 nC; SO-8 package	Lower gate charge but higher R_DS(on); limited to ≤60 A continuous due to SO-8 thermal limits	Prefer for space-constrained designs where gate drive power dominates loss budget
SI7850DP-T1-GE3	R_DS(on) = 2.9 mΩ @ 10 V; Q_g = 48 nC; PowerPAK SO-8	Lower on-resistance but higher gate charge; requires stronger gate driver	Prefer when conduction loss is dominant and driver capability supports >40 nC charge

Compared with IRLHS6342TRPBF and SI7850DP-T1-GE3, BSC032N03SG delivers best-in-class balance of R_DS(on), Q_g, and thermal performance in PG-TDSON-8 - making it optimal for high-current, high-frequency notebook and server VRMs where both efficiency and board area matter.

Availability

BSC032N03SG is available at Aetrix Electronics and suitable for laptop CPU voltage regulators, server DDR5 memory power delivery, and USB-C PD fast charging converters requiring stable component supply across multi-year production cycles.

Supply support for BSC032N03SG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BSC032N03SG belongs to the OptiMOS®2 power MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in portable computing and data center infrastructure.

FAQ

What is the maximum recommended gate-source voltage for BSC032N03SG?

The absolute maximum V_GS is ±20 V per datasheet Rev. 1.6. For reliable long-term operation, gate drive should be limited to 10–12 V for full enhancement, with transient overshoot held below 15 V using appropriate gate resistor and clamping. Exceeding ±20 V risks irreversible gate oxide damage.

Can BSC032N03SG be used as a high-side switch?

No - BSC032N03SG is an N-channel MOSFET with no integrated bootstrap circuitry or level-shifting capability. As a low-side switch, it requires source referenced to ground. High-side operation would demand external gate driver with floating supply, making dedicated high-side or P-channel alternatives more practical.

Is the body diode suitable for synchronous rectification?

Yes - its reverse recovery charge Q_rr is specified at 15 nC and forward voltage V_SD is 0.84–1.0 V at 50 A and 25 °C. These values support efficient synchronous rectification in buck converters up to 1 MHz, provided gate timing avoids shoot-through and accounts for diode conduction during dead time.

What is the thermal pad soldering requirement for PG-TDSON-8?

The exposed drain pad must be soldered to a minimum 6 cm² copper area on the PCB's inner or outer layer, using standard reflow profile per JEDEC J-STD-20. Thermal vias (≥8×0.3 mm) beneath the pad are strongly recommended to transfer heat to internal ground planes, ensuring R_thJA remains near 45 K/W.

BSC032N03SG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5080 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC032N03SG FAQ

1.How can I place an order for BSC032N03SG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC032N03SG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC032N03SG reliable?

The price and inventory of BSC032N03SG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC032N03SG is usually 5 days.

3.What payment methods are accepted for BSC032N03SG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC032N03SG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC032N03SG?

BSC032N03SG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC032N03SG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC032N03SG?

For technical support, including BSC032N03SG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC032N03SG requirements.

6.How does Aetrix verify that BSC032N03SG is sourced from the original manufacturer or authorized distributors?

All BSC032N03SG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC032N03SG meets industry standards.

7.What is the process for return or replacement of BSC032N03SG?

All BSC032N03SG units undergo pre-shipment inspection (PSI). If there is an issue with BSC032N03SG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC032N03SG part is unused and in its original packaging.

Return procedure for BSC032N03SG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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