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Infineon Technologies BSC0402NSATMA1
- Part No.:
- BSC0402NSATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
BSC0402NSATMA1.pdf
- Description:
- MOSFET N-CH 150V 80A TDSON-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,848
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Product details
Overview
BSC0402NSATMA1 from Infineon Technologies is an N-channel 150 V OptiMOSTM5 power MOSFET in PG-TDSON-8 package, featuring RDS(on) max of 9.3 mΩ at VGS = 10 V, 80 A continuous drain current, 60 nC reverse recovery charge (Qrr), and 100% avalanche tested for robustness in high-frequency synchronous rectification and SMPS primary-side switching.
For engineers reviewing the BSC0402NSATMA1 datasheet, BSC0402NSATMA1 pinout, BSC0402NSATMA1 application, or BSC0402NSATMA1 equivalent, key selection criteria include low Qrr for reduced switching loss in hard-switched topologies, thermal resistance RthJC of 0.54 °C/W for high-power density designs, and validated 130 mJ single-pulse avalanche energy under realistic load conditions.
Technical Context
This device employs a trench-gate superjunction structure optimized for high-voltage, high-current DC-DC conversion. Its gate plateau voltage of 5.7 V ensures stable Miller region control during turn-on, while low Ciss (2400 pF) and Crss (15 pF) enable fast, low-noise switching with minimal EMI generation in 100–500 kHz SMPS designs.
The integrated body diode exhibits VSD = 0.86 V at 40 A and Tj = 25 °C, with trr = 51 ns and Qrr = 60 nC-critical parameters for minimizing reverse recovery losses in synchronous rectifier configurations where diode conduction occurs during dead-time intervals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports 120 V AC input-derived bus voltages with 25% margin for transient overvoltage in industrial and telecom power supplies |
| RDS(on), max | 9.3 mΩ at VGS = 10 V - enables ≤3.0 W conduction loss at 80 A, suitable for compact 1 kW+ output converters |
| Qrr | 60 nC - reduces turn-on loss in synchronous rectifiers by limiting diode tail current during commutation |
| EAS | 130 mJ - withstands unclamped inductive switching events without failure in flyback or LLC resonant converters |
| RthJC | 0.54 °C/W - allows direct thermal coupling to heatsink via exposed drain pad, enabling >100 W dissipation at <100 °C junction rise |
| Qg | 33 nC - determines gate driver current requirement (~1.1 A peak for 30 ns rise time with 3 Ω external resistor) |
Pinout & Package
PG-TDSON-8 package with thermally enhanced bottom-side copper pad (Drain-connected). Pin 1–3: Source; Pin 4: Gate; Pin 5–8: Drain (internally paralleled).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3 | Source | Low-impedance return path for main current; tied to PCB ground plane for EMI control and thermal spreading |
| 4 | Gate | Control terminal requiring <33 nC charge; routed away from high-dV/dt drain traces to prevent false triggering |
| 5–8 | Drain | High-current output node connected to internal die backside; must be soldered to large copper area for thermal and electrical performance |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for synchronous rectification | Low Qrr (60 nC) and fast trr (51 ns) reduce body diode conduction loss in secondary-side switching |
| 100% avalanche tested | Guarantees single-pulse EAS ≥130 mJ across production lot-no derating needed for inductive load transients |
| Superior thermal resistance | RthJC = 0.54 °C/W enables >130 W operation with 80 °C case temperature rise, critical for sealed enclosures |
| Pb-free & halogen-free | RoHS-compliant plating and IEC61249-2-21 compliance support automotive and industrial environmental requirements |
Applications
| Server PSU Primary Switch | Industrial 48 V DC-DC Converter |
|---|---|
Use Scenario: High-efficiency 3.3 kW front-end converter operating at 200 kHz with SiC diode clamping. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 80 A peak current and 150 V blocking in LLC half-bridge topology. Use Value: 9.3 mΩ RDS(on) limits conduction loss to 59 W at full load, while 0.54 °C/W RthJC maintains Tj < 125 °C without forced air. | Use Scenario: Isolated 48 V to 12 V step-down module for PLC backplane power with 95% target efficiency. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes in center-tapped forward converter. Use Value: 60 nC Qrr cuts reverse recovery loss by 65% vs. legacy MOSFETs, enabling >94% efficiency at 50 A output. |
| Telecom Rectifier Module | EV Onboard Charger PFC Stage |
Use Scenario: -48 V telecom rectifier with active OR-ing and hot-swap capability. IC Role / Device Role / Timing Role: OR-ing FET controlling power path between redundant 54 V inputs and common bus. Use Value: Low VGS(th) (3.0–4.6 V) ensures reliable turn-on with 5 V gate drive, while 150 V rating covers surge up to 60 V. | Use Scenario: Boost PFC stage in 6.6 kW OBC converting 200–450 V DC battery to 800 V DC link. IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 120 kHz with zero-voltage switching assist. Use Value: 2400 pF Ciss and 15 pF Crss minimize capacitive turn-on loss and improve ZVS margin across wide input range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | RDS(on) = 10.5 mΩ @ 10 V; Qrr = 75 nC; VDS = 100 V | Limited to ≤100 V systems; higher Qrr increases switching loss in sync rectifier use | Select only if cost-sensitive and operating below 80 V bus; not suitable for 150 V designs |
| IPB180N15N5 | RDS(on) = 8.2 mΩ @ 10 V; Qrr = 52 nC; PG-HSOF-8 package with different pinout | Requires PCB redesign due to non-compatible pin mapping (Drain/Sources swapped); superior Qrr but no avalanche rating published | Use when lowest conduction + switching loss is prioritized and layout revision is feasible |
Compared with STL220N10F7 and IPB180N15N5, BSC0402NSATMA1 offers verified 150 V rating and 130 mJ avalanche capability-critical for unregulated input stages-while maintaining competitive Qrr and thermal performance without requiring board rework.
Availability
BSC0402NSATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.
Supply support for BSC0402NSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC.
BSC0402NSATMA1 belongs to the OptiMOSTM5 product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies where low Qrr, robust avalanche behavior, and thermally efficient packaging are mandatory.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The BSC0402NSATMA1 supports 55 A continuous drain current at TC = 100 °C per datasheet Table 2, reflecting its thermal design headroom beyond standard 25 °C ratings. This value is derived from derating curves in Diagram 2 and assumes proper PCB copper area and ambient airflow per JEDEC 51-14 guidelines.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No. The BSC0402NSATMA1 has a gate threshold voltage range of 3.0–4.6 V and is fully controllable with 0 V to 10 V gate drive. Negative gate bias is not required or recommended; standard TTL/CMOS-compatible drivers with 0–10 V swing provide safe and efficient switching.
How is the body diode utilized in practical circuit implementations?
The integrated body diode serves as a freewheeling path during dead-time intervals in synchronous rectifiers and as a protection element in OR-ing and hot-swap circuits. Its 0.86 V forward drop at 40 A and 51 ns reverse recovery time are characterized for use in hard-switched topologies-not intended for continuous conduction like discrete Schottky diodes.
Is the PG-TDSON-8 package compatible with standard reflow profiles?
Yes. The PG-TDSON-8 package is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260 °C for 30 seconds. The exposed drain pad requires full-solder coverage to a minimum 6 cm² copper area on inner or outer PCB layer to achieve rated RthJC and power dissipation.
BSC0402NSATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™ 5
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 8V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.3mOhm @ 40A, 10
- Vgs(th) (Max) @ Id:
- 4.6V @ 107µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 139W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-7
BSC0402NSATMA1 FAQ
1.How can I place an order for BSC0402NSATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC0402NSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC0402NSATMA1 reliable?
The price and inventory of BSC0402NSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0402NSATMA1 is usually 5 days.
3.What payment methods are accepted for BSC0402NSATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0402NSATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSC0402NSATMA1?
BSC0402NSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC0402NSATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC0402NSATMA1?
For technical support, including BSC0402NSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0402NSATMA1 requirements.
6.How does Aetrix verify that BSC0402NSATMA1 is sourced from the original manufacturer or authorized distributors?
All BSC0402NSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0402NSATMA1 meets industry standards.
7.What is the process for return or replacement of BSC0402NSATMA1?
All BSC0402NSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0402NSATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC0402NSATMA1 part is unused and in its original packaging.
Return procedure for BSC0402NSATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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