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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC0403NSATMA1

Name: BSC0403NSATMA1
Brand: Infineon Technologies
SKU: BSC0403NSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC0403NSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC0403NSATMA1.pdf

Description:: 150V, N-CH MOSFET, LOGIC LEVEL,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC0403NSATMA1 from Infineon Technologies is an N-channel 150 V OptiMOSTM5 power MOSFET in PG-TDSON-8 package, featuring 11 mΩ max R_DS(on) at V_GS = 10 V, 70 A continuous drain current, 50 nC reverse recovery charge (Q_rr), and 100% avalanche tested for robustness in high-frequency synchronous rectification and SMPS primary/secondary-side switching.

For engineers reviewing the BSC0403NSATMA1 datasheet, BSC0403NSATMA1 pinout, BSC0403NSATMA1 application, or BSC0403NSATMA1 equivalent, key selection criteria include low Q_rr for reduced switching loss, thermal resistance of 0.6 °C/W (junction-to-case), and validated operation up to 150 °C junction temperature in high-density power stages.

Technical Context

This MOSFET employs Infineon's OptiMOSTM5 silicon process optimized for high-efficiency, high-frequency DC-DC conversion. Its low gate charge (Q_g = 28 nC) and fast switching (t_r = 4 ns, t_f = 5 ns) enable operation above 500 kHz while maintaining low conduction and switching losses.

The integrated body diode exhibits 47 ns reverse recovery time and 0.86 V forward voltage at 35 A, supporting synchronous rectification without external diodes. Thermal design is facilitated by a bottom-side thermal pad and 0.6 °C/W R_thJC, enabling direct PCB copper cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports 120 V bus designs with 25 % safety margin for transient overvoltage
R_DS(on), max	11 mΩ at V_GS = 10 V - enables <1.2 W conduction loss at 35 A, critical for high-current output rails
I_D, cont.	70 A at T_C = 25 °C - rated for high-current secondary-side FETs in 100–200 W LLC or phase-shifted full-bridge converters
Q_rr	50 nC - reduces turn-on loss in hard-switched and ZVS topologies when used as sync rectifier
R_thJC	0.6 °C/W - allows >100 W dissipation with modest heatsinking; enables compact layout on 6 cm² copper area
t_r/t_f	4 ns / 5 ns - supports MHz-class switching with minimal overlap loss in resonant converters
V_GS(th)	3.0–4.6 V - ensures reliable enhancement-mode turn-on with standard 5 V or 3.3 V gate drivers

Pinout & Package

PG-TDSON-8 package with exposed thermal pad on underside; pins 1–3 and pin 5–8 are source and drain terminals respectively, pin 4 is gate, and pin 5–8 share common drain connection for low-inductance high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Common source node; low-inductance parallel connection for high-current return path
4	Gate	Single gate input; requires <3 Ω external series resistance to damp ringing per datasheet test condition
5–8	Drain	High-current drain node; all four pins bonded internally for <0.5 nH parasitic inductance

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_rr (50 nC) and fast t_rr (47 ns) minimize body diode conduction loss in CCM/DCM flyback and LLC
100% avalanche rated	100 mJ single-pulse EAS rating enables reliable operation under inductive load switching and fault conditions
Superior thermal resistance	0.6 °C/W R_thJC allows >100 W power handling with minimal thermal interface material and direct PCB copper cooling
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020; qualified for industrial and automotive-grade reflow profiles

Applications

Server VRM Output Stage

Industrial SMPS Secondary Side

Use Scenario: High-current, high-efficiency 12 V → 1.2 V point-of-load conversion in dual-processor servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter; switches at 500–800 kHz with precise gate timing.

Use Value: 11 mΩ R_DS(on) and 50 nC Q_rr reduce total power loss by ≥15 % vs. legacy 20 mΩ MOSFETs at 60 A load.

Use Scenario: 48 V input, 12 V/20 A isolated DC-DC module for PLC power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology operating at 250 kHz.

Use Value: 47 ns t_rr and 0.86 V V_SD eliminate need for Schottky catch diode, improving efficiency by 1.2 % at full load.

Telecom Rectifier Module

EV Onboard Charger Auxiliary Supply

Use Scenario: 380 V DC input, 12 V/15 A auxiliary supply in 48 V telecom rectifier systems.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge LLC resonant converter; operates in ZVS region above 200 kHz.

Use Value: 28 nC Q_g and 4 ns t_r enable stable ZVS across 10–100 % load, reducing gate drive loss by 35 %.

Use Scenario: 400 V battery-fed 12 V/30 A DC-DC stage in bidirectional OBC auxiliary power unit.

IC Role / Device Role / Timing Role: High-side switch in isolated flyback controller for 12 V system rail generation.

Use Value: 150 °C T_j,max and 100 mJ EAS support continuous operation during regenerative braking transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL135N10F7	R_DS(on) = 9.5 mΩ (V_GS = 10 V), Q_g = 32 nC, no specified Q_rr value	Lacks published Q_rr and t_rr; less suitable for synchronous rectification where body diode behavior is critical	Select only if lowest R_DS(on) dominates and diode recovery is not in critical path
IXTP130N15T	TO-220 package, R_DS(on) = 13 mΩ, Q_rr = 65 nC, R_thJC = 1.2 °C/W	Higher thermal resistance and larger footprint limit use in space-constrained 1U server or OBC modules	Prefer for prototyping or low-volume industrial designs where thermal mass and manual assembly are acceptable

Compared with STL135N10F7 and IXTP130N15T, BSC0403NSATMA1 delivers superior combination of low Q_rr, low R_thJC, and PG-TDSON-8 surface-mount form factor-making it optimal for high-power density, high-frequency SMPS where thermal management and switching loss are co-constrained.

Availability

BSC0403NSATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS secondary-side rectification, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for BSC0403NSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC.

This device belongs to the OptiMOSTM5 family-designed specifically for high-efficiency, high-frequency switched-mode power supplies in datacenter, industrial, and telecom infrastructure where low Q_rr, tight R_DS(on) distribution, and avalanche ruggedness are mandatory.

FAQ

What is the maximum recommended gate resistor for BSC0403NSATMA1 in a 500 kHz LLC resonant converter?

The datasheet specifies 3 Ω external gate resistor for dynamic characterization at 35 A and 75 V. For 500 kHz operation, a 2.2–3.3 Ω non-inductive resistor is recommended to balance switching speed (minimizing overlap loss) and gate ringing suppression, especially with 12 V gate drive and low-impedance PCB layout.

Does BSC0403NSATMA1 require a Kelvin source connection for accurate gate drive in high-current applications?

No-BSC0403NSATMA1 uses a standard 4-pin configuration (3-source, 1-gate, 4-drain) without dedicated Kelvin source. Its low source inductance (<0.3 nH) and symmetric multi-pin source layout ensure stable gate control up to 70 A without separate sensing, as validated in Infineon's reference designs for 60 A VRMs.

Can this MOSFET be used in linear mode (as a pass transistor) for hot-swap or inrush limiting?

While rated for 150 V and 70 A, BSC0403NSATMA1 is optimized for switching-not linear-operation. Its Safe Operating Area (SOA) diagram shows limited DC capability beyond 10 A at 50 V; linear use requires derating to ≤25 A at ≤30 V with forced-air cooling and strict thermal monitoring per Figure 3.

Is the PG-TDSON-8 package compatible with standard reflow profiles for lead-free assembly?

Yes-BSC0403NSATMA1 is qualified per JEDEC J-STD-020 Rev D, supporting peak reflow temperatures up to 260 °C for ≤30 seconds. The package's halogen-free, RoHS-compliant lead finish and thermal pad design ensure reliable solder joint formation using Type 3 or Type 4 solder paste and standard 7-zone reflow profiles.

BSC0403NSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 35A, 10

Vgs(th) (Max) @ Id:: 4.6V @ 91µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-7

BSC0403NSATMA1 FAQ

1.How can I place an order for BSC0403NSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0403NSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0403NSATMA1 reliable?

The price and inventory of BSC0403NSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0403NSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0403NSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0403NSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0403NSATMA1?

BSC0403NSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0403NSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0403NSATMA1?

For technical support, including BSC0403NSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0403NSATMA1 requirements.

6.How does Aetrix verify that BSC0403NSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0403NSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0403NSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0403NSATMA1?

All BSC0403NSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0403NSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0403NSATMA1 part is unused and in its original packaging.

Return procedure for BSC0403NSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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