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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC042N03S G

Name: BSC042N03S G
Brand: Infineon Technologies
SKU: BSC042N03S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC042N03S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC042N03S G.pdf

Description:: MOSFET N-CH 30V 20A/95A TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC042N03S G from Infineon Technologies is a 30 V, 42 mΩ N-channel enhancement-mode MOSFET in PG-TDSON-8 package, optimized for high-efficiency synchronous buck converters and load switches in server VRMs and POL DC-DC modules. It delivers 100 A continuous drain current at T_C = 25 °C, features low gate charge (Q_g = 29 nC), and supports fast switching with t_on = 12.5 ns and t_off = 11.5 ns.

For engineers reviewing the BSC042N03S G datasheet, BSC042N03S G pinout, BSC042N03S G application, or BSC042N03S G equivalent, key selection criteria include R_DS(on) @ 4.5 V (42 mΩ), Q_g (29 nC), thermal resistance R_thJC (0.7 K/W), and its 8-pin exposed-drain TDSON footprint for high-current PCB routing.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 3 technology, enabling low conduction and switching losses in high-frequency power stages. Its gate threshold voltage (V_GS(th)) of 1.7 V ensures reliable turn-on with 3.3 V or 5 V logic-level drivers, while the integrated body diode supports synchronous rectification with reverse recovery charge Q_rr = 42 nC.

The device is rated for 100% avalanche energy testing (E_AS = 110 mJ) and operates across –55 °C to +150 °C junction temperature range. Its 100% UIS-tested ruggedness and low output capacitance (C_oss = 1000 pF @ V_DS = 15 V) support stable operation under transient overloads and hard-switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail applications
R_DS(on) @ V_GS = 4.5 V	42 mΩ - Enables ≤1.5 W conduction loss at 60 A DC load in compact VRM designs
I_D, cont @ T_C = 25 °C	100 A - Supports high-current single-phase POL stages without paralleling
Q_g	29 nC - Reduces gate driver power demand and enables >1 MHz switching
R_thJC	0.7 K/W - Allows direct heatsinking via exposed drain pad for <10 °C temperature rise at 80 W dissipation
t_on/t_off	12.5 ns / 11.5 ns - Minimizes dead-time losses in synchronous buck topologies
Q_rr	42 nC - Limits body diode reverse recovery loss during light-load discontinuous conduction mode

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad), 5.15 mm × 6.25 mm footprint, 1.27 mm pitch, thermally enhanced for high-current PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Main current path (source-to-drain)	Internally connected to exposed copper pad - must be soldered to large PCB copper pour for thermal and current handling
4 (Gate)	Control terminal	Low-threshold input requiring <2.5 V to fully enhance; sensitive to ESD - requires gate resistor and TVS protection
8 (Source)	Reference node for gate drive and current sensing	Common return for gate driver supply and current-sense amplifier; must be low-inductance connection to power ground

Key Features

Feature	Design Value
Optimized for 12 V input synchronous buck converters	Enables >95% efficiency at 50 A output with 300 kHz–1 MHz switching frequency
100% avalanche-rated (E_AS = 110 mJ)	Eliminates need for external snubbers in inductive load switching and hot-swap applications
Low Q_gd/Q_g ratio (0.27)	Reduces Miller-induced shoot-through risk and improves gate drive robustness in high-dV/dt environments
RoHS-compliant, halogen-free, lead-free	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow assembly
Qualified per JEDEC JESD47	Validated for 1000+ hours HTOL at 150 °C, ensuring reliability in telecom and industrial power systems

Applications

Server VRM Phase Legs

Industrial POL DC-DC Modules

Use Scenario: High-density 12 V input → 0.8–1.8 V output conversion for CPU/GPU core rails in dual-socket servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switched at 300–600 kHz with precise gate timing control.

Use Value: 42 mΩ R_DS(on) and 29 nC Q_g reduce both conduction and switching losses, enabling 95.2% peak efficiency at 60 A load.

Use Scenario: Compact 24 V input → 5 V/12 V isolated or non-isolated point-of-load supplies in PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward or buck-derived topologies; handles repetitive pulsed currents up to 100 A.

Use Value: 0.7 K/W R_thJC and exposed drain pad allow direct thermal coupling to heatsink, maintaining T_J < 110 °C at full load without forced air.

Telecom Rectifier Boards

Automotive ADAS Power Management

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers delivering 50–100 A at 12 V.

IC Role / Device Role / Timing Role: Low-side synchronous FET in LLC resonant converter secondary; commutated with zero-voltage switching.

Use Value: Q_rr = 42 nC minimizes body diode conduction time, reducing reverse recovery loss by 35% vs. legacy MOSFETs.

Use Scenario: High-current power distribution switch for radar sensor SoCs and camera ISPs in 12 V automotive systems.

IC Role / Device Role / Timing Role: Load switch with controlled slew rate; driven directly by microcontroller GPIO with no external driver.

Use Value: V_GS(th) = 1.7 V ensures full enhancement at 3.3 V logic, supporting direct MCU interface while maintaining <5 mΩ on-resistance stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V (lower), Q_g = 110 nC (higher), SO-8FL package	Better conduction loss but higher gate drive loss; less suitable for >500 kHz switching	Select when thermal budget allows larger heatsink and switching frequency ≤300 kHz
IRLHS6342TRPBF	R_DS(on) = 45 mΩ @ 4.5 V (slightly higher), Q_g = 22 nC (lower), 2×2 mm WDFN package	Smaller footprint but lower current rating (60 A); limited thermal mass for sustained loads	Select for space-constrained designs where peak current ≤60 A and board area is critical

Compared with STL220N3LLH6 and IRLHS6342TRPBF, BSC042N03S G balances low R_DS(on), moderate Q_g, and robust thermal performance in a widely supported 5×6 mm package-making it optimal for mid-power, high-frequency VRMs where layout simplicity and thermal margin are prioritized over ultra-low R_DS(on) or minimal footprint.

Availability

BSC042N03S G is available at Aetrix Electronics and suitable for server VRM phase legs, industrial POL DC-DC modules, and telecom rectifier boards requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BSC042N03S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The OptiMOS™ product line targets high-efficiency power conversion in computing, telecom, and industrial applications, emphasizing low R_DS(on), fast switching, and ruggedness for demanding DC-DC and motor control use cases.

FAQ

What is the maximum allowable gate-source voltage for BSC042N03S G?

The absolute maximum V_GS rating is ±20 V. Operation above ±16 V risks permanent gate oxide damage. For reliable 4.5 V gate drive, a series gate resistor (10–22 Ω) and bidirectional TVS (e.g., SMAJ5.0A) between gate and source are recommended to suppress ringing and ESD transients.

Can BSC042N03S G be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. For two devices in parallel, use matched gate resistors (±1%), identical PCB trace lengths, and symmetric thermal mounting to minimize imbalance. Derate total current by 15% versus sum of individual ratings.

Does BSC042N03S G require a gate driver IC in high-frequency applications?

A dedicated gate driver (e.g., IRS2007, LM5113) is strongly recommended above 300 kHz. At 1 MHz, the 29 nC Q_g demands >30 mA peak gate current; discrete transistor drivers may cause excessive propagation delay and shoot-through risk due to insufficient current sourcing/sinking capability.

What is the typical thermal resistance from junction to case (R_thJC) and how should it be applied in layout?

R_thJC is 0.7 K/W, measured from junction to the center of the exposed drain pad. To achieve this value, the pad must be soldered to ≥4 cm² of 2 oz copper with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground planes. Avoid solder mask over the pad and ensure stencil aperture matches pad size exactly.

BSC042N03S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3660 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC042N03S G FAQ

1.How can I place an order for BSC042N03S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC042N03S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC042N03S G reliable?

The price and inventory of BSC042N03S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC042N03S G is usually 5 days.

3.What payment methods are accepted for BSC042N03S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC042N03S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC042N03S G?

BSC042N03S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC042N03S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC042N03S G?

For technical support, including BSC042N03S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC042N03S G requirements.

6.How does Aetrix verify that BSC042N03S G is sourced from the original manufacturer or authorized distributors?

All BSC042N03S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC042N03S G meets industry standards.

7.What is the process for return or replacement of BSC042N03S G?

All BSC042N03S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC042N03S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC042N03S G part is unused and in its original packaging.

Return procedure for BSC042N03S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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