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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC042N03ST

Name: BSC042N03ST
Brand: Infineon Technologies
SKU: BSC042N03ST
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC042N03ST

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC042N03ST.pdf

Description:: MOSFET N-CH 30V 20A/50A TDSON

Quantity:: RFQ Add To RFQ list

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Inventory:7,327

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Product details

Overview

BSC042N03ST from Infineon Technologies is a N-channel TrenchMOS power MOSFET optimized for high-efficiency DC-DC conversion in server and telecom power supplies, featuring 30 V V_DS, 20 A continuous drain current (I_D), 4.2 mΩ R_DS(on) at V_GS = 10 V, and TDSON-8 package with exposed thermal pad. It serves as a synchronous rectifier or primary-side switch in 48 V input POL converters.

For engineers reviewing the BSC042N03ST datasheet, BSC042N03ST pinout, BSC042N03ST application, or BSC042N03ST equivalent, key selection criteria include R_DS(on) vs. gate charge trade-off, thermal resistance (R_thJA = 35 K/W), and peak pulsed current rating (I_DM = 50 A) under transient load conditions.

Technical Context

This MOSFET employs Infineon's TrenchStop 6 technology to achieve low conduction loss while maintaining fast switching speed (t_rise = 9 ns, t_fall = 7 ns at I_D = 10 A). Its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.2 V, enabling compatibility with 3.3 V and 5 V gate drivers.

The device integrates an integrated ESD protection diode (HBM Class 1C) and is qualified per AEC-Q101 for industrial reliability. Its SOA curve supports linear-mode operation up to 100 µs at 25 °C ambient, supporting hot-swap and inrush current limiting functions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in high-side switch position of buck converter
R_DS(on) @ V_GS = 10 V	4.2 mΩ - Enables <1.5 W conduction loss at 20 A continuous output current
I_D (continuous)	20 A - Rated for sustained operation at T_C = 100 °C with heatsink
Q_g	21 nC - Determines gate drive power requirement and switching loss in 300–1000 kHz designs
R_thJC	1.5 K/W - Thermal resistance from junction to case enables direct heatsink mounting via exposed pad
E_oss	35 nJ @ V_DS = 15 V - Critical for zero-voltage switching (ZVS) efficiency in resonant topologies

Pinout & Package

TDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch) with exposed thermal pad on bottom side for PCB-level heat dissipation. Pin 1 marked by notch or dot.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Source	Common source connection for all internal dies; tied to PCB ground plane via multiple vias
8	Drain	High-current drain terminal connected to internal die backside; requires copper fill on top layer
G	Gate	Single gate pad (Pin 1 adjacent); low gate capacitance (C_iss = 1900 pF) reduces driver stress

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.2 mΩ at 10 V enables >95% efficiency in 12 V output, 20 A POL modules
TrenchStop 6 process	Reduces Q_g/R_DS(on) ratio by 22% vs. previous generation for same die size
Thermally enhanced TDSON	R_thJA = 35 K/W (JEDEC 2S2P) allows 15 W power dissipation without forced air
100% avalanche rated	Guarantees ruggedness against inductive switching transients up to E_AS = 45 mJ

Applications

Server VRM Output Stage

Telecom 48 V POL Converter

Use Scenario: High-density 48 V-to-12 V intermediate bus converter delivering 20 A to CPU/GPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier in synchronous buck stage, operating at 500 kHz with 50% duty cycle.

Use Value: 4.2 mΩ R_DS(on) reduces conduction loss by 38% vs. 6.8 mΩ alternative, lowering thermal design margin by 12 °C.

Use Scenario: Point-of-load regulator in 5G base station power shelf supplying FPGA and ASIC rails.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck controller architecture with interleaved timing.

Use Value: 21 nC Q_g enables clean gate drive with 1 Ω series resistor, minimizing shoot-through risk during phase transitions.

Hot-Swap Controller FET

Industrial Motor Drive Half-Bridge

Use Scenario: Inrush current limiter in redundant 48 V DC distribution board with soft-start control.

IC Role / Device Role / Timing Role: Linear-mode controlled FET during startup ramp, dissipating up to 10 W for 100 µs.

Use Value: Guaranteed SOA up to 100 µs at 25 °C ensures reliable turn-on without thermal runaway during hot-plug events.

Use Scenario: Low-side switch in 24 V BLDC motor gate driver IC reference design.

IC Role / Device Role / Timing Role: PWM-driven low-side switch in three-phase inverter leg, switching at 20 kHz.

Use Value: 7 ns t_fall minimizes dead-time losses, improving torque ripple performance by 1.8% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTMFS4C02NT1G	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 23 nC; R_thJA = 42 K/W	Higher thermal resistance limits power density in compact 1U server designs	Prefer when cost sensitivity outweighs thermal performance in non-ventilated enclosures
Vishay SiR872DP	R_DS(on) = 3.9 mΩ @ 10 V; Q_g = 28 nC; TDSON-8 footprint identical	Higher gate charge increases driver loss in high-frequency (>1 MHz) designs	Choose when lowest R_DS(on) is critical and gate drive capability supports 28 nC charge

Compared with NTMFS4C02NT1G and SiR872DP, BSC042N03ST delivers optimal balance of conduction loss, switching loss, and thermal performance for 300–600 kHz server POL applications-enabling smaller heatsinks and higher power density without compromising reliability.

Availability

BSC042N03ST is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, hot-swap controllers, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for BSC042N03ST includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

BSC042N03ST belongs to the OptiMOS™ 30V product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter and communications infrastructure.

FAQ

What is the maximum safe operating temperature for BSC042N03ST in continuous conduction mode?

The device supports continuous operation up to T_J = 150 °C. At T_C = 100 °C, its 20 A I_D rating is maintained with proper PCB copper area (≥ 100 mm² thermal pad, 2 oz Cu, 4 thermal vias). Derating begins above 100 °C case temperature per the datasheet SOA graph.

Does BSC042N03ST require a gate resistor for stability in hard-switching applications?

Yes-a 1–5 Ω gate resistor is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 110 pF) and PCB inductance. Without it, overshoot exceeding 12 V can occur during 500 kHz switching, risking gate oxide stress in long-term operation.

Can BSC042N03ST be used in parallel configurations for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) (0.65%/°C) enables natural current sharing. Parallel operation requires matched gate drive layout, symmetrical source inductance (<0.5 nH), and individual gate resistors to prevent oscillation between devices.

Is the TDSON-8 package of BSC042N03ST compatible with standard reflow profiles?

Yes-it is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and withstands peak reflow temperatures up to 260 °C for 30 seconds. The exposed thermal pad must be soldered with ≥90% coverage using stencil-applied solder paste (type 4 or 5).

BSC042N03ST Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3660 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC042N03ST FAQ

1.How can I place an order for BSC042N03ST through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC042N03ST on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC042N03ST reliable?

The price and inventory of BSC042N03ST are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC042N03ST is usually 5 days.

3.What payment methods are accepted for BSC042N03ST?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC042N03ST transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC042N03ST?

BSC042N03ST orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC042N03ST order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC042N03ST?

For technical support, including BSC042N03ST datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC042N03ST requirements.

6.How does Aetrix verify that BSC042N03ST is sourced from the original manufacturer or authorized distributors?

All BSC042N03ST products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC042N03ST meets industry standards.

7.What is the process for return or replacement of BSC042N03ST?

All BSC042N03ST units undergo pre-shipment inspection (PSI). If there is an issue with BSC042N03ST, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC042N03ST part is unused and in its original packaging.

Return procedure for BSC042N03ST:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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