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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC046N10NS3GATMA1

Name: BSC046N10NS3GATMA1
Brand: Infineon Technologies
SKU: BSC046N10NS3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC046N10NS3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC046N10NS3GATMA1.pdf

Description:: MOSFET N-CH 100V 17A/100A TDSON

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Product details

Overview

BSC046N10NS3GATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TDSON-8 (SuperSO8) package, rated for 100 V V_DS, 4.6 mΩ R_DS(on) at V_GS = 10 V, and 100 A continuous drain current at T_C = 25 °C. It features low gate charge (Q_g = 63 nC), optimized FOM (Q_g × R_DS(on)), and 150 °C operation-designed for high-efficiency DC-DC converters in server power supplies.

For engineers reviewing the BSC046N10NS3GATMA1 datasheet, BSC046N10NS3GATMA1 pinout, BSC046N10NS3GATMA1 application, or BSC046N10NS3GATMA1 equivalent, key selection criteria include its 4.6 mΩ on-resistance at 10 V drive, 63 nC total gate charge, 100 V breakdown voltage, thermal resistance R_thJC = 0.8 K/W, and integrated body diode with Q_rr = 101 nC and t_rr = 56 ns.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized cell layout to minimize conduction and switching losses simultaneously. Its low R_DS(on) × Q_g figure-of-merit enables high-frequency operation up to 1 MHz in synchronous buck converters while maintaining <1.2 V body diode forward voltage at 50 A.

The device integrates a robust, fast-recovery body diode (t_rr = 56 ns, Q_rr = 101 nC) and supports 150 °C junction temperature, enabling compact thermal design in space-constrained 1U server PSUs and telecom rectifiers where thermal cycling reliability is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input bus architectures with 2× safety margin against transients
R_DS(on) max	4.6 mΩ at V_GS = 10 V - enables ≤2.3 W conduction loss at 100 A, critical for 80 PLUS Titanium efficiency
Q_g	63 nC - reduces gate drive power and allows use of smaller gate drivers in high-frequency (>500 kHz) topologies
I_D cont.	100 A at T_C = 25 °C - delivers full-rated current with minimal heatsinking on 40 mm × 40 mm PCB copper area
R_thJC	0.8 K/W - enables direct thermal coupling to heatsink, supporting >150 W power dissipation in compact form factors
t_rr / Q_rr	56 ns / 101 nC - minimizes reverse recovery loss and EMI in hard-switched synchronous rectification

Pinout & Package

PG-TDSON-8 (SuperSO8) package: 5 mm × 6 mm footprint, exposed drain pad on bottom side for optimal thermal transfer; RoHS-compliant, halogen-free, qualified per JEDEC J-STD-20/JESD22 for industrial power applications.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source connection for internal parallel cells; low-inductance multi-pin routing reduces switching loop inductance
4, 8	Gate	Dual gate pins reduce gate loop inductance and improve switching consistency across paralleled devices
Exposed Pad	Drain	Thermally and electrically connected drain terminal; requires solder mask defined stencil for reliable thermal interface

Key Features

Feature	Design Value
Optimized Q_g × R_DS(on) FOM	289 mΩ·nC - enables higher frequency operation without sacrificing conduction loss, improving power density
150 °C maximum junction temperature	Supports extended thermal margin in sealed enclosures and high-ambient telecom base stations
Low C_iss/C_oss ratio (4500 pF / 790 pF)	Improves voltage-dependent capacitance linearity, easing ZVS implementation in resonant LLC converters
Integrated fast body diode	Q_rr = 101 nC and soft recovery behavior reduce EMI and stress on synchronous FETs in buck converters

Applications

Server VRM Power Stage

Telecom Rectifier Module

Use Scenario: High-current, high-frequency synchronous buck converter in 1U server CPU voltage regulator modules.

IC Role / Device Role / Timing Role: High-side switching MOSFET operating at 500–1000 kHz with 100 A peak load current.

Use Value: 4.6 mΩ R_DS(on) and 63 nC Q_g jointly enable >95% efficiency at 12 V input, reducing thermal load on adjacent components.

Use Scenario: Primary-side switch in 48 V telecom rectifier modules with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching transistor in phase-shifted full-bridge topology handling 3 kW output.

Use Value: 0.8 K/W R_thJC allows direct heatsink mounting, eliminating thermal interface material and simplifying mechanical assembly.

Industrial Motor Drive Inverter

EV Onboard Charger PFC Stage

Use Scenario: Low-side switch in three-phase IGBT/MOSFET inverter driving 5–10 kW AC induction motors.

IC Role / Device Role / Timing Role: Fast-switching, high-current freewheeling path with integrated body diode.

Use Value: 56 ns t_rr and soft recovery minimize voltage spikes during commutation, reducing snubber requirements.

Use Scenario: Boost switch in two-stage OBC PFC stage operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switching element handling 10–15 A RMS current.

Use Value: Halogen-free, RoHS-compliant construction meets automotive AEC-Q101 precursor requirements for EV charging systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB046N10N5ATMA1	Same R_DS(on) (4.6 mΩ), but newer OptiMOS™ 5 generation; lower Q_gd (8.5 nC vs. 11 nC) and improved C_oss linearity	Better suited for ZVS LLC due to reduced Miller plateau sensitivity; slightly higher cost	Select when optimizing for >1 MHz resonant topologies requiring tighter gate charge control
IRF3205PBF	Higher R_DS(on) (5.5 mΩ), larger TO-220 package, no dual gate pins, R_thJC = 1.25 K/W	Limited to ≤300 kHz operation; requires larger heatsink and more PCB area	Choose only for legacy designs or cost-sensitive, low-frequency (<100 kHz) applications where thermal density is not constrained

Compared with IPB046N10N5ATMA1, BSC046N10NS3GATMA1 offers proven field reliability in high-volume server PSUs but less optimized for ultra-high-frequency ZVS; versus IRF3205PBF, it delivers 18% lower conduction loss and 36% better thermal resistance in half the footprint.

Availability

BSC046N10NS3GATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial motor drives, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for BSC046N10NS3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter and telecom infrastructure applications.

FAQ

What is the maximum recommended gate drive voltage for BSC046N10NS3GATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Using 12–15 V improves R_DS(on) margin at high temperature but increases gate driver power and risk of overshoot; 10 V provides best balance of on-resistance, switching speed, and gate oxide reliability.

Does BSC046N10NS3GATMA1 require external gate resistors in typical buck converter applications?

Yes-external gate resistors (typically 2.2–4.7 Ω) are required to dampen ringing, control dV/dt, and limit peak gate current. The dual gate pins allow symmetric resistor placement to minimize asymmetry in paralleled configurations, especially critical above 300 kHz switching.

Can BSC046N10NS3GATMA1 be used in parallel configurations?

Yes-the device is designed for paralleling with matched units. Key enablers include low R_DS(on) temperature coefficient (+0.6 mΩ/°C), dual gate pins for balanced drive, and tight V_GS(th) distribution (2.0–3.5 V). Use identical layout, Kelvin source connections, and individual gate resistors for stable current sharing.

Is the body diode suitable for synchronous rectification in continuous conduction mode?

Yes-the body diode has soft recovery (Q_rr = 101 nC, t_rr = 56 ns) and low V_SD (1.0–1.2 V at 50 A), making it viable for synchronous rectification in CCM buck converters up to 300 kHz. However, dedicated synchronous FETs offer lower Q_rr and should be preferred above 500 kHz.

BSC046N10NS3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-7

BSC046N10NS3GATMA1 FAQ

1.How can I place an order for BSC046N10NS3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC046N10NS3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC046N10NS3GATMA1 reliable?

The price and inventory of BSC046N10NS3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC046N10NS3GATMA1 is usually 5 days.

3.What payment methods are accepted for BSC046N10NS3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC046N10NS3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC046N10NS3GATMA1?

BSC046N10NS3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC046N10NS3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC046N10NS3GATMA1?

For technical support, including BSC046N10NS3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC046N10NS3GATMA1 requirements.

6.How does Aetrix verify that BSC046N10NS3GATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC046N10NS3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC046N10NS3GATMA1 meets industry standards.

7.What is the process for return or replacement of BSC046N10NS3GATMA1?

All BSC046N10NS3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC046N10NS3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC046N10NS3GATMA1 part is unused and in its original packaging.

Return procedure for BSC046N10NS3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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