Infineon Technologies BSC048N025S G

Overview

BSC048N025S G from Infineon Technologies is a logic-level N-channel enhancement-mode MOSFET optimized for high-efficiency notebook DC/DC converters and synchronous buck converters, featuring 25 V V_DS, 4.8 mΩ R_DS(on) at V_GS = 10 V, 89 A continuous drain current at T_C = 25 °C, and avalanche-rated ruggedness for reliable operation in hard-switching SMPS topologies.

For engineers reviewing the BSC048N025S G datasheet, BSC048N025S G pinout, BSC048N025S G application, or BSC048N025S G equivalent, this device is selected for high-current, low-voltage point-of-load regulation where fast switching, low gate charge (Q_g = 16–21 nC), and thermal robustness (R_thJC = 2 K/W) are critical to power stage efficiency and board-level thermal management.

Technical Context

This OptiMOS®2 power transistor employs trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_g figure-of-merit (FOM), enabling reduced conduction and switching losses in 5–12 V input synchronous buck stages. Its 25 V breakdown voltage and 6 kV/µs dv/dt rating support stable operation under fast transient conditions typical of CPU/GPU VRMs.

The device integrates an optimized body diode with Q_rr = 10 nC and V_SD = 0.87–1.1 V at I_F = 50 A, supporting efficient synchronous rectification and minimizing reverse recovery loss during dead-time transitions.

Key Specifications

Pinout & Package

PG-TDSON-8 (Power-Transistor Dual-Side Cooling Outline, 8-pin) package with exposed drain pad on bottom side for optimal thermal performance and dual-side cooling capability. Pin 1–8 arranged in two rows; drain terminals occupy pins 1, 2, 3, 4, 5, 6, and 8; source connected to pin 7 and integrated into the exposed pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242PBF and DMT6009LPS-13, BSC048N025S G delivers superior thermal handling (2 K/W R_thJC) and higher current capability (89 A), making it the preferred choice for high-density, high-reliability notebook and server VRMs where thermal margin and avalanche robustness are design-critical.

Availability

BSC048N025S G is available at Aetrix Electronics and suitable for high-current DC/DC converters, notebook voltage regulator modules, and industrial power supplies requiring stable component supply across multi-year production cycles.

Supply support for BSC048N025S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with leadership in silicon and wide-bandgap power devices.

BSC048N025S G belongs to the OptiMOS®2 family, engineered specifically for high-frequency, high-efficiency synchronous rectification in low-voltage DC/DC conversion systems targeting portable computing and communications infrastructure.

FAQ

What is the maximum recommended gate-source voltage for BSC048N025S G?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for operation between 0 V and 10 V. Gate drive circuits should limit V_GS to ≤12 V to avoid accelerated gate oxide degradation while maintaining full enhancement. Transient overshoot beyond 15 V must be suppressed using clamping diodes or RC snubbers.

Can BSC048N025S G be used as a synchronous rectifier in a 5 V output buck converter?

Yes - its logic-level threshold (V_GS(th) = 1.2–2.0 V), low R_DS(on) (4.8 mΩ), and fast switching (t_r = 5–8 ns) make it ideal for low-voltage synchronous rectification. At 5 V output and 30 A load, conduction loss is ~4.3 W, and thermal design must accommodate R_thJC = 2 K/W via direct pad soldering to ≥6 cm² copper.

Does BSC048N025S G require a gate resistor for stability in high-frequency operation?

A gate resistor (typically 2.2–4.7 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance interaction. With Q_gd = 4–7 nC and C_iss = 2010–2670 pF, uncontrolled gate drive can cause oscillation above 500 kHz; empirical testing shows 2.7 Ω yields optimal trade-off between switching speed and EMI suppression.

How does the PG-TDSON-8 package improve thermal performance compared to standard SO-8?

PG-TDSON-8 features an exposed drain pad on the bottom surface that serves as both high-current path and primary thermal interface, achieving R_thJC = 2 K/W - over 10× better than SO-8's ~25 K/W. This allows direct mounting to heatsinks or thick copper pours, enabling >60 W power dissipation without forced air, unlike SO-8 which is limited to ~2.8 W in still air.