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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC050N03MSGATMA1

Name: BSC050N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC050N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC050N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC050N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 16A/80A TDSON

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Product details

Overview

BSC050N03MSGATMA1 from Infineon Technologies is an N-channel Power-MOSFET in PG-TDSON-8 package, optimized for 5 V gate drive in notebook CPU/GPU VRMs and point-of-load (POL) converters. It delivers R_DS(on) = 6.3 mΩ @ V_GS = 4.5 V, 80 A continuous drain current at T_C = 25 °C, and 100% avalanche tested robustness for high-reliability SMPS designs.

For engineers reviewing the BSC050N03MSGATMA1 datasheet, BSC050N03MSGATMA1 pinout, BSC050N03MSGATMA1 application, or BSC050N03MSGATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), thermal resistance R_thJC = 2.5 K/W, and JEDEC-qualified operation up to 150 °C junction temperature in high-frequency synchronous buck stages.

Technical Context

This OptiMOS™3 M-Series MOSFET employs a trench-gate superjunction structure enabling ultra-low on-resistance with fast switching dynamics. Its gate threshold voltage (V_GS(th) = 1–2 V) ensures stable turn-on under 4.5 V logic-level drive, while low C_iss (2700–3600 pF) and C_rss (55 pF typ.) minimize Miller-induced shoot-through risk in high-dV/dt environments.

The device integrates a robust body diode with Q_rr = 15 nC (V_R = 15 V, di/dt = 400 A/µs), supporting efficient synchronous rectification in POL converters. Thermal design leverages bottom-side copper exposure in the PG-TDSON-8 package for direct heatsink mounting and R_thJC = 2.5 K/W conduction path.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Supports 12 V input rails with margin for transient spikes in notebook and server POL applications.
R_DS(on) @ 4.5 V	6.3 mΩ max - Enables <15 mW conduction loss at 30 A, critical for high-efficiency 5 V–1.2 V conversion.
Q_g total	22 nC max @ 10 V - Low gate drive power requirement compatible with integrated PWM controller outputs.
I_D continuous	80 A @ T_C = 25 °C - Sustains high-current CPU core loads without derating in thermally managed layouts.
R_thJC	2.5 K/W - Allows direct thermal coupling to heatsinks, reducing junction-to-case temperature rise by >50% vs. standard SO-8.
E_AS	35 mJ single-pulse - Withstands inductive energy during hard-switching faults in non-isolated DC-DC stages.

Pinout & Package

PG-TDSON-8 package with exposed drain pad on bottom side for optimal thermal and electrical performance. Pin 1–5 and 7–8 are source terminals; Pin 6 is gate; drain connected to underside thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Source (S)	Seven parallel source connections reduce package inductance and improve current sharing in high-di/dt switching.
6	Gate (G)	Single gate input with low R_G (0.7–2.5 Ω) enables fast, controlled turn-on/turn-off without external gate resistor.
Bottom Pad	Drain (D)	Exposed copper drain pad provides primary thermal path and low-inductance high-current return path to PCB ground plane.

Key Features

Feature	Design Value
Optimized 4.5 V drive	Guaranteed R_DS(on) ≤ 6.3 mΩ at V_GS = 4.5 V - Eliminates need for level-shifting in 5 V logic-controlled VRMs.
Low FOM_SW	Q_g × R_DS(on) = 139 nC·mΩ typ. - Reduces combined conduction + switching losses in >500 kHz SMPS designs.
100% avalanche rated	Single-pulse I_AS = 50 A, E_AS = 35 mJ - Ensures ruggedness against inductive kickback in synchronous buck high-side or low-side positions.
JEDEC qualification	Qualified per J-STD-20 and JESD22 - Validated for reflow compatibility and reliability in automated SMT assembly for consumer and industrial end-equipment.

Applications

Notebook CPU Voltage Regulator

GPU Point-of-Load Converter

Use Scenario: High-current, multi-phase buck converter supplying 1.2 V @ 100+ A to mobile Intel/AMD processors under dynamic load transients.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with 4.5 V gate drive from integrated controller.

Use Value: 6.3 mΩ R_DS(on) minimizes I²R loss during heavy load; 7× source pins reduce parasitic inductance to maintain clean gate control during 200 A/µs di/dt events.

Use Scenario: Compact 3.3 V or 1.8 V POL module powering discrete graphics memory and GPU cores in ultrabooks and workstations.

IC Role / Device Role / Timing Role: High-side switch in dual-phase interleaved buck with tight layout constraints and aggressive thermal targets.

Use Value: R_thJC = 2.5 K/W enables direct heatsink attachment; 30 V rating accommodates 12 V input with 50% safety margin against overshoot.

Server DDR5 Memory Regulator

Industrial FPGA Core Supply

Use Scenario: 1.1 V/40 A VRM delivering tightly regulated power to DDR5 modules with strict ±3% output tolerance and fast transient response.

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck stage where low Q_gd (3.8–6.3 nC) suppresses Miller-induced false turn-on during high dv/dt transitions.

Use Value: C_rss = 55 pF typ. reduces gate oscillation risk; 100% avalanche test ensures immunity to bus fault conditions during hot-plug events.

Use Scenario: 0.85 V/30 A core supply for Xilinx/Kintex or Intel/Arria FPGAs in programmable logic controllers and edge AI inference units.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-efficiency, thermally constrained buck converter operating continuously at 85 °C ambient.

Use Value: R_DS(on) drift <15% from 25 °C to 125 °C ensures stable efficiency across full temperature range; -55…150 °C T_j rating supports extended industrial operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 7.5 mΩ @ 4.5 V; Q_g = 16.5 nC; PG-TDSON-8 package	Higher R_DS(on) increases conduction loss by ~20% at 30 A; lower Q_g improves switching speed margin	Select when gate drive strength is limited but thermal headroom exists.
DMN3025LFG-7	R_DS(on) = 2.5 mΩ @ 4.5 V; Q_g = 27 nC; 30 V rating; SOT-23-6 package	Lower R_DS(on) but 3× higher Q_g; smaller package limits current handling to 12 A continuous	Use only in low-current (<15 A), space-constrained POLs where footprint is prioritized over thermal performance.

Compared with IRLHS6342TRPBF and DMN3025LFG-7, BSC050N03MSGATMA1 uniquely balances sub-7 mΩ on-resistance, <22 nC gate charge, and 80 A current capability in a thermally optimized PG-TDSON-8 package-making it optimal for high-power-density, high-reliability notebook and server VRMs.

Availability

BSC050N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU voltage regulators, GPU point-of-load converters, and industrial FPGA core supplies requiring stable component supply and long-term production continuity.

Supply support for BSC050N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™3 M-Series, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

Is BSC050N03MSGATMA1 suitable for high-side switching configurations?

Yes - its 30 V V_DS rating, 1–2 V V_GS(th), and low C_rss (55 pF) make it viable for high-side use in bootstrap-gated buck converters. However, gate drive must exceed 4.5 V to ensure full enhancement; typical implementation uses a dedicated high-side driver or integrated controller with ≥5 V gate output capability.

What is the maximum PCB copper area required for full 80 A rating?

Full 80 A continuous current requires T_C = 25 °C, achieved using a 6 cm² (e.g., 40 mm × 40 mm) 70 µm-thick FR4 PCB copper area connected to the drain pad. Smaller areas or elevated ambient temperatures necessitate current derating per the I_D vs. T_C curve on page 4 of the datasheet.

Does this MOSFET include integrated ESD protection?

No - BSC050N03MSGATMA1 lacks on-chip ESD protection diodes. External TVS or RC snubbers are recommended at gate and source terminals in systems exposed to handling or system-level ESD events, especially in automated SMT lines or field-replaceable modules.

Can it replace older OptiMOS™2 devices in existing designs?

Yes - pin-compatible with BSC050N03LS G (OptiMOS™2), offering 15–20% lower R_DS(on) and improved FOM. Layout remains identical, but gate drive timing may require minor adjustment due to lower Q_g and faster switching; verify stability under worst-case load transients before release.

BSC050N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC050N03MSGATMA1 FAQ

1.How can I place an order for BSC050N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC050N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC050N03MSGATMA1 reliable?

The price and inventory of BSC050N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC050N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC050N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC050N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC050N03MSGATMA1?

BSC050N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC050N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC050N03MSGATMA1?

For technical support, including BSC050N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC050N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC050N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC050N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC050N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC050N03MSGATMA1?

All BSC050N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC050N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC050N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC050N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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