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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC052N03S G

Name: BSC052N03S G
Brand: Infineon Technologies
SKU: BSC052N03S G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC052N03S G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC052N03S G.pdf

Description:: MOSFET N-CH 30V 18A/80A TDSON

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Product details

Overview

BSC052N03S G from Infineon Technologies is a 30 V, 52 mΩ, 100 A (continuous) N-channel TrenchMOS power MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC-DC conversion and motor control with low gate charge (27 nC) and fast switching (t_on = 12.2 ns, t_off = 14.5 ns).

For engineers reviewing the BSC052N03S G datasheet, BSC052N03S G pinout, BSC052N03S G application, or BSC052N03S G equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, thermal resistance (R_thJC = 0.9 K/W), pulsed drain current rating (I_DM = 400 A), and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET employs Infineon's TrenchStop™ 6 technology, delivering enhanced conduction and switching performance via optimized cell layout and reduced gate-drain charge (Q_gd = 11.5 nC). Its low threshold voltage (V_GS(th) = 1.2–2.2 V) enables robust 3.3 V logic-level gate drive compatibility.

The device integrates a monolithic body diode with soft reverse recovery (Q_rr = 115 nC, t_rr = 55 ns) and is characterized for operation across –55 °C to +150 °C junction temperature range, supporting automotive-grade reliability under repetitive avalanche stress (E_AS = 250 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 24 V nominal bus systems with 20 % margin.
R_DS(on) @ V_GS = 4.5 V	52 mΩ typical - enables <1 W conduction loss at 10 A continuous drain current.
I_D (continuous)	100 A at T_C = 25 °C - rated for high-current synchronous buck stages with forced-air cooling.
Q_g	27 nC total gate charge - reduces driver power loss and allows use of low-power gate drivers.
R_thJC	0.9 K/W junction-to-case thermal resistance - supports >100 W power dissipation with standard heatsink interface.
E_AS	250 mJ single-pulse avalanche energy - ensures ruggedness against inductive switching transients in motor drives.
Q_rr	115 nC body diode reverse recovery charge - minimizes commutation losses and EMI in half-bridge configurations.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 1.05 mm height), thermally enhanced surface-mount design with solderable bottom-side thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source	Common source connection for all internal cells; electrically tied to exposed thermal pad for low-inductance return path.
4	Gate	Control terminal; requires <2.2 V threshold to turn on; driven by dedicated gate driver IC or microcontroller PWM output.
8	Drain	Main power terminal; connected internally to copper clip and externally to PCB thermal pad for optimal heat transfer.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 3.3 V V_GS, eliminating need for level-shifting in modern MCU-based power stages.
Low Q_gd/Q_g ratio	0.43 (11.5 nC / 27 nC) - improves Miller immunity and enables stable high-frequency (>1 MHz) switching.
Enhanced body diode	Soft recovery with t_rr = 55 ns - reduces voltage overshoot and snubber requirements in synchronous rectification.
Thermally optimized package	Exposed drain pad with 1.0 mm thick copper clip - achieves 0.9 K/W R_thJC without external heatsink at 100 A.
Avalanche-rated	Specified E_AS = 250 mJ - validated for unclamped inductive switching in BLDC motor phase legs.

Applications

Server VRM

Automotive ADAS Camera Power

Use Scenario: 12 V input to 0.8–1.2 V output, 100+ A load in CPU/GPU voltage regulator modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switched at 500 kHz–1 MHz with precise dead-time control.

Use Value: 52 mΩ R_DS(on) and 27 nC Q_g reduce both conduction and switching losses, enabling >95 % efficiency at full load.

Use Scenario: Compact 5 V/3 A power supply for CMOS image sensor and ISP in rear-view or surround-view camera modules.

IC Role / Device Role / Timing Role: Low-side switch in buck-boost or SEPIC topology; handles transient loads up to 10 A with minimal thermal rise.

Use Value: –55 °C to +150 °C operating range and AEC-Q101 qualification ensure reliability in under-hood environments.

Industrial PLC I/O Driver

USB-C PD Sink Protection

Use Scenario: 24 V DC solid-state relay replacement for digital output modules driving solenoids and indicators.

IC Role / Device Role / Timing Role: Load switch with integrated overcurrent and thermal shutdown; controlled via isolated SPI or optocoupler interface.

Use Value: 100 A pulsed rating and 250 mJ E_AS withstand inductive kickback without external flyback diode.

Use Scenario: Input protection switch between USB-C receptacle and PD controller in portable medical or test equipment.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection FET placed upstream of buck converter; responds within 100 ns to fault events.

Use Value: 30 V V_DS headroom accommodates ±20 V surge per USB-C spec; 52 mΩ R_DS(on) limits voltage drop to <500 mV at 10 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V (lower), Q_g = 105 nC (higher), PG-HSOP-8 package	Better conduction loss but slower switching; requires larger gate driver due to higher Q_g	Prefer for <300 kHz applications where conduction dominates; avoid in >500 kHz VRMs.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 53 mΩ @ 4.5 V (nearly identical), Q_g = 24.5 nC (slightly lower), SO-8FL package	Same logic-level drive and thermal profile; slightly better gate charge efficiency	Suitable drop-in replacement where Infineon supply continuity is constrained; verified pinout and footprint match.

Compared with STL220N3LLH6 and NTMFS5C673NL, BSC052N03S G offers the best balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness-making it optimal for high-reliability, medium-frequency industrial and automotive power stages.

Availability

BSC052N03S G is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS camera power supplies, and industrial PLC I/O drivers requiring stable component supply and long-term lifecycle support.

Supply support for BSC052N03S G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

BSC052N03S G belongs to the OptiMOS™ 5 family, engineered specifically for high-current, high-efficiency DC-DC conversion in data center, automotive, and industrial power systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSC052N03S G is rated for continuous operation up to +150 °C junction temperature, as specified in Infineon's official datasheet revision 2.1. Derating curves confirm 100 A I_D is sustainable only when case temperature remains ≤25 °C; above that, current must be linearly reduced per the T_C vs. I_D graph on page 5.

Does this MOSFET require a gate resistor for stability in hard-switching applications?

Yes-a 2.2 Ω to 10 Ω non-inductive gate resistor is recommended to dampen ringing caused by parasitic L_gs/L_gd and prevent spurious turn-on. Infineon's application note AN2019-04 specifies 4.7 Ω as optimal for 500 kHz buck converters using this device with standard PCB layout.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the integrated body diode features soft reverse recovery (t_rr = 55 ns, Q_rr = 115 nC) and is characterized for bidirectional conduction. It can serve as the freewheeling path during low-side conduction phase, though external Schottky diodes may still be used for ultra-low-loss designs above 1 MHz.

How does the PG-TDSON-8 package compare thermally to traditional SO-8?

The PG-TDSON-8 package uses a copper clip and exposed drain pad to achieve R_thJC = 0.9 K/W-over 3× better than standard SO-8 (R_thJC ≈ 3.0 K/W). This allows >100 W power dissipation with minimal heatsinking, whereas SO-8 would require active cooling at half that power level.

BSC052N03S G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2820 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-6

BSC052N03S G FAQ

1.How can I place an order for BSC052N03S G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC052N03S G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC052N03S G reliable?

The price and inventory of BSC052N03S G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC052N03S G is usually 5 days.

3.What payment methods are accepted for BSC052N03S G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC052N03S G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC052N03S G?

BSC052N03S G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC052N03S G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC052N03S G?

For technical support, including BSC052N03S G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC052N03S G requirements.

6.How does Aetrix verify that BSC052N03S G is sourced from the original manufacturer or authorized distributors?

All BSC052N03S G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC052N03S G meets industry standards.

7.What is the process for return or replacement of BSC052N03S G?

All BSC052N03S G units undergo pre-shipment inspection (PSI). If there is an issue with BSC052N03S G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC052N03S G part is unused and in its original packaging.

Return procedure for BSC052N03S G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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